AUIRF3805STRL

AUIRF3805 AUIRF3805S AUIRF3805L   AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Package Type AUIRF3805 AUIRF3805L TO-220 TO-262 AUIRF3805S D2-Pak 55V RDS(on) typ. max. 2.6m ID (Silicon Limited) 3.3m 210A ID (Package Limited) 160A D D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Base part number VDSS   S D G S G TO-220AB AUIRF3805 G Gate Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 G S D D2Pak AUIRF3805S TO-262 AUIRF3805L D Drain S Source Orderable Part Number AUIRF3805 AUIRF3805L AUIRF3805S AUIRF3805STRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 210 ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 150 160 IDM PD @TC = 25°C Pulsed Drain Current  Maximum Power Dissipation VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy Tested Value  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance   Symbol RJC RCS RJA RJA Parameter Junction-to-Case  Case-to-Sink, Flat, Greased Surface  Junction-to-Ambient  Junction-to-Ambient ( PCB Mount, steady state)  Units A 890 300 W 2.0 ± 20 650 940 See Fig.15,16, 12a, 12b -55 to + 175 W/°C V mJ A mJ   °C  300 10 lbf•in (1.1N•m)     Typ. Max. Units ––– 0.50 ––– 0.50 ––– 62 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-08-23 AUIRF3805/S/L   Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 ––– ––– V VGS = 0V, ID = 250µA ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA ––– 2.6 3.3 m VGS = 10V, ID = 75A ** 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 75 ––– ––– S VDS = 25V, ID = 75A** ––– ––– 20 VDS =55V, VGS = 0V µA ––– ––– 250 VDS =55V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 190 52 72 150 20 93 87 290 ––– ––– ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 7960 1260 630 4400 980 1550 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 210 ––– ––– 890 ––– ––– ––– ––– 36 47 1.3 54 71 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Output Capacitance Coss Effective Output Capacitance Coss eff. Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 75A** nC   VDS = 44V VGS = 10V VDD = 28V ID = 75A** ns RG= 2.6 VGS = 10V  Between lead, 6mm (0.25in.) nH   from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 pF   VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 44V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V  Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 75A**,VGS = 0V  ns TJ = 25°C ,IF = 75A**, VDD = 28V nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)  This value determined from sample failure population, starting TJ = 25°C, L = 0.23mH, RG = 25, IAS = 75A, VGS =10V.  Pulse width 1.0ms; duty cycle  2%.  Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.  This is only applied to TO-220AB package.  This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994  R is measured at TJ of approximately 90°C  TO-220 device will have an Rth value of 0.45°C/W. ** All AC and DC test condition based on old Package limitation current = 75A. 2 2017-08-23 AUIRF3805/S/L   1000 1000 100 BOTTOM TOP 4.5V 10  60µs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1 BOTTOM 100 4.5V 10 0.1 1 10 100 0.1 1 VDS , Drain-to-Source Voltage (V) 10 100 Fig. 2 Typical Output Characteristics 1000.0 200 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current )  60µs PULSE WIDTH Tj = 175°C VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics TJ = 175°C 100.0 10.0 TJ = 25°C 1.0 VDS = 20V TJ = 25°C 160 TJ = 175°C 120 80 40 VDS = 10V 380µs PULSE WIDTH  60µs PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 0 0 20 40 60 80 100 120 140 160 180 ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Transconductance vs. Drain Current 2017-08-23 AUIRF3805/S/L   14000 ID= 75A VGS, Gate-to-Source Voltage (V) 12000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss 8000 6000 4000 Coss 2000 VDS = 44V VDS= 28V 16 12 8 4 Crss 0 0 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 150 200 250 300 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000.0 ISD, Reverse Drain Current (A) 100 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) TJ = 175°C 100.0 10.0 TJ = 25°C 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 10msec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 50 2.4 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2017-08-23 AUIRF3805/S/L   2.0 LIMITED BY PACKAGE 200 ID , Drain Current (A) ID = 75A RDS(on) , Drain-to-Source On Resistance (Normalized) 240 160 120 80 40 VGS = 10V 1.5 1.0 0 0.5 25 50 75 100 125 150 -60 -40 -20 175 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) T C , Case Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 R2 R2 C 1 2 Ri (°C/W) i (sec) 0.2653 0.001016 0.2347 0.012816 C 2 Ci= iRi Ci= iRi 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-08-23 AUIRF3805/S/L   15V VDS D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 2000 DRIVER L I D 15A 20A BOTTOM 75A TOP 1600 1200 800 400 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 4.5 4.0 ID = 250µA 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit   6 2017-08-23 AUIRF3805/S/L   10000 Avalanche Current (A) Duty Cycle = Single Pulse 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 800 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 175 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature   7 2017-08-23 AUIRF3805/S/L   Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms   8 2017-08-23 AUIRF3805/S/L   TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUIRF3805 YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code TO-220AB package is not recommended for Surface Mount Application.   9 2017-08-23 AUIRF3805/S/L   D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF3805S YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code 10 2017-08-23 AUIRF3805/S/L   TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF3805L YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code   11 2017-08-23 AUIRF3805/S/L   D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 12 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2017-08-23 AUIRF3805/S/L   Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-220AB N/A TO-262 D2-Pak MSL1, 260°C Machine Model Human Body Model   ESD Charged Device Model RoHS Compliant Class M4 (+/-425V)† AEC-Q101-002 Class H3A (+/-4000V)† AEC-Q101-001 Class C5 (+/-1000V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date Comments 9/30/2015   Updated datasheet with corporate template Corrected ordering table on page 1. 8/23/2017  Corrected part marking on pages 9,10,11. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   13 2017-08-23