AUTOMOTIVE GRADE
Features
Advanced Process Technology
P-Channel MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRF5210S
VDSS
-100V
RDS(on)
max.
60m
ID
-38A
D
S
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications..
Base part number
D2Pak
AUIRF5210S
G
Gate
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Package Type
D2-Pak
AUIRF5210S
G
D
Drain
S
Source
Orderable Part Number
AUIRF5210S
AUIRF5210STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-38
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
-24
-140
3.1
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv./dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Units
A
W
170
1.3
± 20
120
-23
17
-7.4
-55 to + 150
300
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
Max.
Units
–––
0.75
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF5210S
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
-100 ––– –––
V VGS = 0V, ID = -250µA
––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
––– –––
60
m VGS = -10V, ID = -38A
-2.0
––– -4.0
V VDS = VGS, ID = -250µA
9.5
––– –––
S VDS = -50V, ID = -23A
––– ––– -50
VDS = -100V, VGS = 0V
µA
––– ––– -250
VDS = -80V,VGS = 0V,TJ =125°C
––– ––– -100
VGS = -20V
nA
––– ––– 100
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
150
22
81
14
63
72
55
230
33
120
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
2780
800
430
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
-38
–––
–––
-140
–––
–––
–––
––– -1.6
170 260
1180 1770
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = -23A
nC VDS = -80V
VGS = -10V
VDD = -50V
ID = -23A
ns
RG= 2.4
VGS = -10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = -23A,VGS = 0V
ns TJ = 25°C ,IF = -23A, VDD = -25V
nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25, IAS = -23A.(See Fig.12)
ISD -23A, di/dt -650A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R is measured at TJ of approximately 90°C.
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AUIRF5210S
1000
1000
100
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
10
-4.5V
1
BOTTOM
10
-4.5V
1
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
1
10
0.1
100
10
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
1000
-I D, Drain-to-Source Current (A)
1
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
T J = 25°C
100
T J = 150°C
10
1
VDS = -50V
60µs PULSE WIDTH
0.1
2
4
6
8
10
12
14
-VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
ID = -38A
VGS = -10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2019-10-15
AUIRF5210S
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = Cgs + Cgd, C ds SHORTED
C rss = Cgd
-V GS, Gate-to-Source Voltage (V)
ID= -23A
C, Capacitance(pF)
C oss = Cds + Cgd
10000
C iss
C oss
1000
C rss
VDS = -80V
VDS = -50V
10.0
VDS = -20V
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
75
100
125
150
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
-I D, Drain-to-Source Current (A)
1000
-I SD, Reverse Drain Current (A)
50
QG, Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
100
T J = 150°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
100µsec
10
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1msec
10msec
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-VSD, Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
25
1.8
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2019-10-15
AUIRF5210S
40
-I D, Drain Current (A)
35
30
25
20
Fig 10a. Switching Time Test Circuit
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
R1
R1
0.05
J
0.02
0.01
0.01
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
C
Ri (°C/W)
i (sec)
0.128309
0.000069
0.377663
0.001772
0.244513
0.010024
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF5210S
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
500
ID
TOP
-8.7A
-14A
BOTTOM -23A
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 14a. Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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AUIRF5210S
Fig 15. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
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AUIRF5210S
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF5210S
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
8
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AUIRF5210S
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
9
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
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AUIRF5210S
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
Class M4 (+/-425V)†
AEC-Q101-002
Class H2 ( /-4000V)†
AEC-Q101-001
Class C5 ( /-1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
Comments
9/30/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
10/15/2019
Correted typo on part marking from “AU5210S” to “AUIRF5210S” page 8.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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