AUIRF540Z
AUIRF540ZS
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
Package Type
AUIRF540Z
TO-220
21m
26.5m
ID
36A
D
S
D
G
S
G
D2Pak
AUIRF540ZS
TO-220AB
AUIRF540Z
G
Gate
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
D2-Pak
AUIRF540ZS
100V
max.
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
Base part number
VDSS
RDS(on) typ.
D
Drain
S
Source
Orderable Part Number
AUIRF540Z
AUIRF540ZS
AUIRF540ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
36
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
25
140
92
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
RJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Units
A
W
0.61
± 20
83
120
See Fig.15,16, 12a, 12b
-55 to + 175
W/°C
V
mJ
A
mJ
°C
300
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.50
–––
1.64
–––
62
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF540Z/S
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
100 ––– –––
V VGS = 0V, ID = 250µA
––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA
–––
21
26.5 m VGS = 10V, ID = 22A
2.0
–––
4.0
V VDS = VGS, ID = 250µA
36
––– –––
S VDS = 25V, ID = 22A
––– –––
20
VDS =100V, VGS = 0V
µA
––– ––– 250
VDS = 100V,VGS = 0V,TJ =125°C
––– ––– 200
VGS = 20V
nA
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
42
9.7
15
15
51
43
39
63
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
–––
–––
–––
1770
180
100
730
110
170
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
36
–––
–––
140
–––
–––
–––
–––
33
41
1.3
50
62
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = 22A
nC VDS = 80V
VGS = 10V
VDD = 50V
ID = 22A
ns
RG= 12
VGS = 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 80V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 22A,VGS = 0V
ns TJ = 25°C ,IF = 22A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V.
This is only applied to TO-220AB package.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
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2017-09-22
AUIRF540Z/S
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
BOTTOM
4.5V
10
60µs PULSE WIDTH
Tj = 175°C
1
100
0.1
0
VDS , Drain-to-Source Voltage (V)
10
100
100
Fig. 2 Typical Output Characteristics
80
100
Gfs, Forward Transconductance (S)
1000
ID, Drain-to-Source Current )
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
T J = 175°C
10
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
4.0
5.0
6.0
T J = 175°C
60
40
T J = 25°C
20
VDS = 10V
380µs PULSE WIDTH
0
1
7.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
0
10
20
30
40
50
ID, Drain-to-Source Current (A)
Fig. 4 Typical Forward Transconductance
vs. Drain Current
2017-09-22
AUIRF540Z/S
3000
20
2500
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
2000
Ciss
1500
1000
500
Coss
ID= 22A
VDS = 80V
VDS= 50V
VDS= 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000.0
ISD, Reverse Drain Current (A)
20
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100.0
T J = 175°C
10.0
1.0
T J = 25°C
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
10
1.4
100µsec
1
0.1
0.1
4
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2017-09-22
AUIRF540Z/S
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID , Drain Current (A)
40
30
20
10
ID = 22A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF540Z/S
15V
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
180
DRIVER
L
ID
TOP
8.3A
14A
BOTTOM 20A
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
4.0
3.5
ID = 250µA
3.0
2.5
2.0
1.5
-75
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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2017-09-22
AUIRF540Z/S
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
100
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 20A
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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AUIRF540Z/S
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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AUIRF540Z/S
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRF540Z
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
TO-220AB package is not recommended for Surface Mount Application.
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AUIRF540Z/S
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF540ZS
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
10
2017-09-22
AUIRF540Z/S
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
2017-09-22
AUIRF540Z/S
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
TO-220AB
N/A
2
D -Pak
MSL1
Class M4 (400V)†
AEC-Q101-002
Class H1B (1000V)†
AEC-Q101-001
Class C3 (750V)†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
Comments
9/30/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
09/22/2017
Corrected typo error on part marking on pages 9,10.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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