AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRF6215S
VDSS
-150V
RDS(on) max.
0.29
ID
-13A
D
S
G
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
Base part number
AUIRF6215S
Package Type
D2-Pak
D2 Pak
AUIRF6215S
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF6215S
AUIRF6215STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ -10V
Max.
-13
Units
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
-9.0
-44
3.8
A
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Junction-to-Ambient ( PCB Mount, steady state)
RJA
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
–––
Max.
1.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Rev. 2.3, 2020-12-17
AUIRF6215S
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
-150 ––– –––
V VGS = 0V, ID = -250µA
––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.29
VGS = -10V, ID = -6.6A
––– ––– 0.58
VGS = -10V, ID = -6.6A,TJ =150°C
-2.0 ––– -4.0
V VDS = VGS, ID = -250µA
3.6 ––– –––
S VDS = -25V, ID = -6.6A
––– ––– -25
VDS = -150V, VGS = 0V
µA
––– ––– -250
VDS = -120V,VGS = 0V,TJ =150°C
––– ––– -100
VGS = -20V
nA
––– ––– 100
VGS = 20V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
36
53
37
66
8.1
35
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
860
220
–––
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = -6.6A
nC VDS = -120V
VGS = -10V
VDD = -75V
ID = -6.6A
ns
RG= 6.8
RD= 12
Between lead,6mm (0.25in.)
nH from package and center
of die contact
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig.5
Min. Typ. Max. Units
–––
–––
-11
–––
–––
-44
–––
–––
–––
–––
160
1.2
-1.6
240
1.7
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = -6.6A,VGS = 0V
ns TJ = 25°C ,IF = -6.6A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 14mH, RG = 25, IAS = -6.6A. (See fig.12)
ISD -6.6A, di/dt 620A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R is measured at TJ of approximately 90°C
2
Rev. 2.3, 2020-12-17
AUIRF6215S
Fig. 1 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
3
Fig. 2 Typical Output Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Rev. 2.3, 2020-12-17
AUIRF6215S
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Rev. 2.3, 2020-12-17
AUIRF6215S
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction -to-Case
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Rev. 2.3, 2020-12-17
AUIRF6215S
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
6
Rev. 2.3, 2020-12-17
AUIRF6215S
Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power
7
Rev. 2.3, 2020-12-17
AUIRF6215S
D2 - Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2- Pak (TO-263AB) Part Marking Information
Part Number
AUIRF6215S
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging
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Rev. 2.3, 2020-12-17
AUIRF6215S
D2- Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging
9
Rev. 2.3, 2020-12-17
AUIRF6215S
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
D2-Pak
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
Class M3 (+/- 400V)†
AEC-Q101-002
Class H1B (+/- 1000V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
Rev.
Comments
11/13/2015
2.1
Updated datasheet with corporate template
Corrected ordering table on page 1.
10/10/2017
2.2
Corrected typo error on part marking on page 8.
12/16/2020
2.3
Correct footer date (inconsistent date) on all pages
Removed “HEXFET® Power MOSFET” -page1
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
10
Rev. 2.3, 2020-12-17
