AUIRF6218S
AUIRF6218L
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Planar Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
-150V
RDS(on) max.
150m
ID
-27A
D
D
S
G
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
Base part number
Package Type
AUIRF6218L
TO-262
AUIRF6218S
D2-Pak
G
D2Pak
AUIRF6218S
S
D
TO-262
AUIRF6218L
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF6218L
AUIRF6218S
AUIRF6218STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Max.
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Units
-27
-19
-110
250
1.6
± 20
210
-16
8.2
-55 to + 175
300
A
W
W/°C
V
mJ
A
V/ns
°C
Typ.
Max.
Units
–––
–––
0.61
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF6218S/L
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
–––
–––
-3.0
11
–––
–––
–––
–––
Typ.
–––
-0.17
120
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
150 mVGS = -10V, ID = -16A
-5.0
V VDS = VGS, ID = -250µA
–––
S VDS = -50V, ID = -16A
-25
VDS = -120V, VGS = 0V
µA
-250
VDS = -120V,VGS = 0V,TJ =150°C
-100
VGS = -20V
nA
100
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 71
110
––– 21
–––
––– 32
–––
––– 21
–––
––– 70
–––
––– 35
–––
––– 30
–––
––– 2210 –––
––– 370 –––
––– 89
–––
Coss
Output Capacitance
––– 2220 –––
Coss
Output Capacitance
–––
170
–––
VGS = 0V,VDS = -120V,ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
340
–––
VGS = 0V,VDS = 0V to -120V
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ID = -16A
nC VDS = -120V
VGS = -10V
VDD = -75V
ID = -16A
ns
RG= 3.9
VGS = -10V
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
pF
VGS = 0V,VDS = -1.0V,ƒ = 1.0MHz
Min. Typ. Max. Units
–––
–––
-27
–––
–––
-110
–––
–––
–––
–––
150
860
-1.6
–––
–––
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = -16A,VGS = 0V
ns TJ = 25°C ,IF = -16A, VDD = -25V
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25, IAS = -17A.
ISD -17A, di/dt 520A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
R is measured at TJ of approximately 90°C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
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AUIRF6218S/L
1000
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
10
1000
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
100
1
-4.5V
0.1
60µs PULSE WIDTH
BOTTOM
10
0.1
60µs PULSE WIDTH
1
Tj = 175°C
10
0.1
100
0.1
-V DS, Drain-to-Source Voltage (V)
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
2.5
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
-I D , Drain-to-Source Current )
-4.5V
1
Tj = 25°C
0.01
T J = 175°C
10
VDS = 50V
60µs PULSE WIDTH
1.0
2
4
6
8
10
-VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
ID = -27A
VGS = -10V
2.0
1.5
1.0
0.5
12
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-11-16
AUIRF6218S/L
100000
-V GS, Gate-to-Source Voltage (V)
ID= -16A
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Ciss
1000
Coss
Crss
100
8.0
6.0
4.0
2.0
10
0.0
1
10
100
0
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.10
30
40
50
60
70
80
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T J = 25°C
VGS = 0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
20
QG Total Gate Charge (nC)
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
T J = 175°C
10.00
1.00
10
1000
1000.00
100.00
VDS = 120V
VDS = 75V
VDS = 30V
10.0
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
1
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-11-16
AUIRF6218S/L
30
-I D, Drain Current (A)
25
20
15
Fig 10a. Switching Time Test Circuit
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
1
2
2
3
C
3
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W)
i (sec)
0.264
0.000285
0.206
0.001867
0.140
0.013518
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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R DS(on) , Drain-to -Source On Resistance (m )
R DS (on) , Drain-to-Source On Resistance (m )
400
350
300
VGS = -10V
250
200
150
100
0
20
40
60
1000
900
800
700
600
ID = -27A
500
400
300
200
100
0
4
80
5
6
7
8
9
10
11
12
-VGS, Gate -to -Source Voltage (V)
-ID , Drain Current (A)
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
EAS , Single Pulse Avalanche Energy (mJ)
900
ID
-4.6A
-6.3A
BOTTOM -16A
800
TOP
700
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
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AUIRF6218S/L
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF6218S
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF6218S/L
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF6218L
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF6218S/L
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF6218S/L
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D2-Pak
MSL1
TO-262 Pak
Class M4 (+/- 600V)†
AEC-Q101-002
Class H2 (+/- 3000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
11/16/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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