AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRF7103Q
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Package Type
AUIRF7103Q
SO-8
50V
RDS(on) max.
ID
Top View
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
VDSS
130m
3.0A
SO-8
AUIRF7103Q
G
Gate
Standard Pack
Form
Quantity
Tape and Reel
4000
D
Drain
S
Source
Orderable Part Number
AUIRF7103QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
3.0
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
2.5
25
2.4
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Symbol
RJL
RJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
A
W
16
± 20
22
See Fig.19,20, 16b, 16c
12
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
Max.
Units
–––
–––
20
62.5
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-9-30
AUIRF7103Q
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
50
––– –––
V VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 130
VGS = 10V, ID = 3.0A
m
––– ––– 200
VGS = 4.5V, ID = 1.5A
1.0
–––
3.0
V VDS = VGS, ID = 250µA
3.4
––– –––
S VDS = 15V, ID = 3.0A
––– –––
2.0
VDS =40V, VGS = 0V
µA
––– –––
25
VDS = 40V,VGS = 0V,TJ =55°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
1.2
2.8
5.1
1.7
15
2.3
255
69
29
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
3.0
–––
–––
12
–––
–––
–––
–––
35
45
1.2
53
67
ID = 2.0A
nC VDS = 40V
VGS = 10V
VDD = 25V
ID = 1.0A
ns
RG = 6.0
RD = 25
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 1.5A,VGS = 0V
ns TJ = 25°C ,IF = 1.5A,
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1" in square Cu board.
Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Fig. 12)
ISD 2.0A, di/dt 155A/µs, VDD V(BR)DSS, TJ 175°C.
Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
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2015-9-30
AUIRF7103Q
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4.5V
10
20µs PULSE WIDTH
Tj = 25°C
10
1
20µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
0.1
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current )
100.00
T J = 175°C
T J = 25°C
VDS = 25V
20µs PULSE WIDTH
1.00
3.0
6.0
9.0
12.0
10
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
10.00
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
15.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
4.5V
ID = 3.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS= 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-9-30
AUIRF7103Q
10000
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
1000
Ciss
Coss
100
V DS = 40V
V DS = 25V
V DS = 10V
9
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
I D = 2.0A
Crss
6
3
10
0
1
10
100
0
3
6
9
12
Q G, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
ID, Drain-to-Source Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
1
100µsec
1msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
2015-9-30
AUIRF7103Q
3.0
ID , Drain Current (A)
2.4
1.8
1.2
Fig 10a. Switching Time Test Circuit
0.6
0.0
25
50
75
100
125
T C , Case Temperature
150
175
( °C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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2015-9-30
AUIRF7103Q
0.15
R DS (on) , Drain-to-Source On Resistance ( )
RDS(on) , Drain-to -Source On Resistance ( )
0.14
0.13
0.12
ID = 3.0A
0.11
0.10
0.09
4.5
6.0
7.5
9.0
10.5
12.0
13.5
2.500
2.000
VGS = 4.5V
1.500
1.000
0.500
VGS = 10V
0.000
0
15.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
15
20
25
30
35
40
70
60
1.8
50
ID = 250µA
Power (W)
V GS(th) Gate threshold Voltage (V)
10
Fig 13. Typical On-Resistance Vs.
Drain Current
2.0
1.5
40
30
20
1.3
10
1.0
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
Fig. 14. Typical Threshold Voltage Vs. Junction
Temperature
6
5
ID , Drain Current (A)
-VGS, Gate -to -Source Voltage (V)
0
1.00
10.00
100.00
1000.00
Time (sec)
Fig 15. Typical Power Vs. Time
2015-9-30
AUIRF7103Q
EAS , Single Pulse Avalanche Energy (mJ)
15V
60
ID
1.2A
2.5A
3.0A
TOP
48
BOTTOM
D.U.T
RG
36
DRIVER
L
VDS
+
V
- DD
IAS
20V
24
A
0.01
tp
Fig 16b. Unclamped Inductive Test Circuit
12
V(BR)DSS
0
25
50
75
100
125
150
Starting T ,JJunction Temperature
tp
175
( °C)
Fig 16a. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 16c. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 18. Basic Gate Charge Waveform
2015-9-30
AUIRF7103Q
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
10
1
0.01
0.1
0.05
0.10
0.01
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 19. Typical Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
25
Notes on Repetitive Avalanche Curves , Figures 19, 20:
(For further info, see AN-1005 at www.infineon.com)
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 3.0A
20
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16b, 16c.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 11, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 11)
15
10
5
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 20. Maximum Avalanche Energy
vs. Temperature
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2015-9-30
AUIRF7103Q
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
D
D IM
B
8
6
7
6
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B ASIC
1.27 B ASIC
e1
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
0.25 [ .010]
A1
C
A
M AX
.025 B ASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M AX
5
A
IN C H ES
M IN
y
0.10 [ .004]
B
8X L
F O O T P R IN T
N O TE S :
1.
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2.
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3.
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4.
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
8X c
7
8 X 0 .7 2 [ .0 2 8 ]
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
9
2015-9-30
AUIRF7103Q
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
10
2015-9-30
AUIRF7103Q
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SO-8
MSL1
Class M1A (+/- 50V)†
AEC-Q101-002
Class H0 (+/- 250V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
4/3/2014
9/30/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2015-9-30
