AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
S1
Package Type
AUIRF7309Q
SO-8
N-CHANNEL MOSFET
1
8
N-CH
P-CH
30V
-30V
0.05
0.10
4.7A
-3.5A
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS
RDS(on) max.
P-CHANNEL MOSFET
ID
Top View
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
AUIRF7309Q
SO-8
AUIRF7309Q
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tape and Reel
4000
S
Source
Orderable Part Number
AUIRF7309QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
N-Channel
Max.
P-Channel
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 10V
4.7
-3.5
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4.0
-3.0
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.2
-2.4
IDM
Pulsed Drain Current
16
-12
PD @TA = 25°C
Maximum Power Dissipation
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Linear Derating Factor
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient ( PCB Mount, steady state)
6.9
Units
A
1.4
W
0.011
± 20
W/°C
-6.0
-55 to + 150
V
V/ns
°C
Typ.
Max.
Units
–––
90
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-9-30
AUIRF7309Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Gate-to-Source Forward Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
5.2
2.5
–––
–––
–––
–––
–––
Gate-to-Source Reverse Leakage
N-P
–––
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Typ.
Max. Units
–––
–––
–––
–––
0.032 –––
-0.037 –––
––– 0.050
––– 0.080
–––
0.10
–––
0.16
–––
3.0
–––
-3.0
–––
–––
–––
–––
–––
1.0
–––
-1.0
–––
25
–––
-25
––– ± 100
––– ± 100
Conditions
VGS = 0V, ID = 250µA
V
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
V/°C
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.4A
VGS = 4.5V, ID = 2.0A
VGS = -10V, ID = -1.8A
VGS = -4.5V, ID = -1.5A
VDS = VGS, ID = 250µA
V
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.4A
S
VDS = -24V, ID = -1.8A
VDS =24V, VGS = 0V
VDS = -24V,VGS = 0V
µA
VDS =24V, VGS = 0V ,TJ =125°C
VDS = -24V,VGS = 0V,TJ =125°C
VGS = ± 20V
nA
VGS = ± 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
11
21
17
22
25
7.7
18
4.0
25
25
2.9
2.9
7.9
9.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
6.0
520
440
180
200
72
93
–––
–––
–––
–––
–––
–––
–––
Min.
Typ.
N-Channel
ID = 2.6A, VDS = 16V,VGS = 4.5V
nC
P-Channel
ID = -2.2A,VDS = -16V,VGS = -4.5V
N-Channel
VDD = 10V,ID = 2.6A,RG = 6.0
RD = 3.8
ns
nH
P-Channel
VDD = -10V,ID = -2.2A,RG = 6.0
RD = 4.5
Between lead, 6mm(0.25n) from
package and center of die contact
N-Channel
VGS = 0V,VDS = 15V,ƒ = 1.0MHz
pF
P-Channel
VGS = 0V,VDS = -15V,ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Max. Units
Conditions
N-Ch
–––
–––
1.8
P-Ch
–––
–––
-1.8
A
N-Ch
–––
–––
16
P-Ch
–––
–––
-12
N-Ch
–––
–––
1.0
TJ = 25°C,IS = 1.8A,VGS = 0V
V
P-Ch
–––
–––
-1.0
TJ = 25°C,IS = -1.8A,VGS = 0V
N-Ch
–––
47
71
N-Channel
ns
P-Ch
–––
53
80
TJ = 25°C ,IF = 2.6A, di/dt = 100A/µs
N-Ch
–––
56
84
P-Channel
nC
TJ = 25°C,IF = -2.2A, di/dt = 100A/µs
P-Ch
66
99
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 23)
N-Channel ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2015-9-30
N-Channel
Fig. 1 Typical Output Characteristics
TJ = 25°C
Fig. 3 Typical Transfer Characteristics
3
AUIRF7309Q
Fig. 2 Typical Output Characteristics
TJ = 150°C
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-9-30
N-Channel
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
AUIRF7309Q
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
2015-9-30
AUIRF7309Q
N-Channel
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 11a. Gate Charge Test Circuit
5
Qgd
Qgodr
Fig 11b. Basic Gate Charge Waveform
2015-9-30
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
P-Channel
Fig. 12 Typical Output Characteristics
TJ = 25°C
Fig. 14 Typical Transfer Characteristics
6
AUIRF7309Q
Fig. 13 Typical Output Characteristics
TJ = 150°C
Fig. 15 Normalized On-Resistance
vs. Temperature
2015-9-30
P-Channel
Fig 16. Typical Capacitance vs.
Drain-to-Source Voltage
Fig. 18 Typical Source-to-Drain Diode
Forward Voltage
7
AUIRF7309Q
Fig 17. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 19. Maximum Safe Operating Area
2015-9-30
AUIRF7309Q
P-Channel
Fig 20. Maximum Drain Current vs. Case Temperature
Fig 21a. Switching Time Test Circuit
Fig 22a. Gate Charge Test Circuit
8
Fig 21b. Switching Time Waveforms
Fig 22b. Basic Gate Charge Waveform
2015-9-30
N and P-Channel
AUIRF7309Q
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
®
Fig 24. Peak Diode Recovery dv/dt Test Circuit for N & P-Channel HEXFET Power MOSFETs
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AUIRF7309Q
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
D
8
6
7
6
M AX
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B ASIC
1.27 B ASIC
e1
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
A1
0.25 [ .010]
C
A
M AX
.025 B ASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M IN
5
A
IN C H ES
D IM
B
y
0.10 [ .004]
B
8X L
F O O T P R IN T
N O TE S :
1.
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2.
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3.
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4.
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
8X c
7
8 X 0 .7 2 [ .0 2 8 ]
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
10
2015-9-30
AUIRF7309Q
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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AUIRF7309Q
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SO-8
MSL1
N CH: Class M2 (+/- 150V)†
P CH: Class M2(+/- 150V)†
AEC-Q101-002
N CH: Class H1A (+/- 500V)†
P CH: Class H0 (+/- 250V)†
AEC-Q101-001
N CH: Class C5 (+/- 2000V)†
P CH: Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/28/2014
9/30/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
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