AUTOMOTIVE GRADE
AUIRF7342Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
-55V
RDS(on) max.
ID
Top View
0.105
-3.4A
SO-8
AUIRF7342Q
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
Base part number
Package Type
AUIRF7342Q
SO-8
G
Gate
Standard Pack
Form
Quantity
Tape and Reel
4000
D
Drain
S
Source
Orderable Part Number
AUIRF7342QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Max.
Units
VDS
Symbol
Drain-Source Voltage
-55
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.4
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
-2.7
-27
2.0
PD @TA = 70°C
Maximum Power Dissipation
Linear Dearating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp < 10µs
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
VGS
VGSM
EAS
dv/dt
TJ
TSTG
Parameter
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient
A
1.3
0.016
± 20
30
114
5.0
-55 to + 150
W
mW°/C
V
mJ
V/ns
°C
Typ.
Max.
Units
–––
62.5
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF7342Q
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
-55
––– –––
V VGS = 0V, ID = -250µA
––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105
VGS = -10V, ID = -3.4A
––– 0.150 0.170
VGS = -4.5V, ID = -2.7A
-1.0 ––– -3.0
V VDS = VGS, ID = -250µA
3.3
––– –––
S VDS = -10V, ID = -3.1A
––– ––– -2.0
VDS = -55V, VGS = 0V
µA
––– ––– -25
VDS = -55V,VGS = 0V,TJ =55°C
––– ––– -100
VGS = -20V
nA
––– –––
100
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
3.0
8.4
14
10
43
22
690
210
86
38
4.5
13
22
15
64
32
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
-2.0
–––
–––
-27
–––
–––
–––
–––
54
85
-1.2
80
130
ID = -3.1A
nC VDS = -44V
VGS = -10V, See Fig.10
VDD = -28V
ID = -1.0A
ns
RG = 6.0
RD = 16
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig.9
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = -2.0A,VGS = 0V
ns TJ = 25°C ,IF = -2.0A,
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8)
ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square copper board , t 10sec.
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AUIRF7342Q
100
100
10
BOTTOM
-3.0V
1
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
10
BOTTOM
-3.0V
1
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = -40°C
0.1
0.1
0.1
1
10
100
0.1
1000
10
100
1000
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
100
TOP
10
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
-3.0V
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
1000
-V DS, Drain-to-Source Voltage (V)
Fig. 3 Typical Output Characteristics
-I D, Drain-to-Source Current (A)
100
-ID, Drain-to-Source Current (A)
1
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
3
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
T J = -40°C
T J = 25°C
T J = 150°C
10
1
VDS = -25V
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
-VGS, Gate-to-Source Voltage (V)
Fig. 4 Typical Transfer Characteristics
2015-9-30
AUIRF7342Q
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = -3.4 A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
EAS , Single Pulse Avalanche Energy (mJ)
300
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting T J, Junction Temperature
Fig. 7 Typical On-Resistance Vs. Gate Voltage
4
150
( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
2015-9-30
AUIRF7342Q
20
VGS
Ciss
Crss
Coss
C, Capacitance (pF)
960
=
=
=
=
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
1200
Ciss
720
480
Coss
240
1
12
8
4
0
10
0
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
30
40
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
-I D, Drain-to-Source Current (A)
100
-I SD, Reverse Drain Current (A)
10
Q G , Total Gate Charge (nC)
100
-VDS , Drain-to-Source Voltage (V)
T J = -40°C
T J = 25°C
T J = 150°C
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1.0
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
-VSD , Source-to-Drain Voltage (V)
Fig. 11 Typical Source-Drain Diode
Forward Voltage
5
V DS = -48V
V DS = -30V
V DS = -12V
16
Crss
0
ID = -3.1A
1
10
100
-VDS , Drain-toSource Voltage (V)
Fig. 12 Maximum Safe Operating Area
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AUIRF7342Q
3.5
-I D, Drain Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
Fig 13. Maximum Drain Current vs.
Ambient Temperature
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRF7342Q
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
D
D IM
B
8
6
7
6
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B ASIC
1.27 B ASIC
e1
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
0.25 [ .010]
A1
C
A
M AX
.025 B ASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M AX
5
A
IN C H ES
M IN
y
0.10 [ .004]
B
8X L
F O O T P R IN T
N O TE S :
1.
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2.
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3.
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4.
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
8X c
7
8 X 0 .7 2 [ .0 2 8 ]
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
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AUIRF7342Q
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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AUIRF7342Q
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SO-8
MSL1
Class M2 (+/- 200V)†
AEC-Q101-002
Class H1A (+/- 500V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/27/2014
9/30/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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