AUTOMOTIVE GRADE
Features
Advanced Process Technology
Low On-Resistance
Logic Level Gate Drive
P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRF7416Q
1
8
S
2
7
S
3
6
D
G
4
5
D
Package Type
AUIRF7416Q
SO-8
VDSS
-30V
RDS(on) max.
0.02
ID
-10A
D
Top View
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
Base part number
A
D
S
SO-8
AUIRF7416Q
G
Gate
Standard Pack
Form
Quantity
Tape and Reel
4000
D
Drain
S
Source
Orderable Part Number
AUIRF7416QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-10
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
-7.1
-45
2.5
VGS
EAS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient
Units
A
W
0.02
± 20
370
-5.0
-55 to + 150
mW°/C
V
mJ
V/ns
°C
Typ.
Max.
Units
–––
50
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF7416Q
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
-30
––– –––
V VGS = 0V, ID = -250µA
––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.020
VGS = -10V, ID = -5.6A
––– ––– 0.035
VGS = -4.5V, ID = -2.8A
-1.0 ––– -2.04
V VDS = VGS, ID = -250µA
5.6
––– –––
S VDS = -10V, ID = -2.8A
––– ––– -1.0
VDS = -24V, VGS = 0V
µA
––– ––– -25
VDS = -24V,VGS = 0V,TJ = 125°C
––– ––– -100
VGS = -20V
nA
––– –––
100
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
61
8.0
22
18
49
59
60
1700
890
410
92
12
32
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
-3.1
–––
–––
-45
–––
–––
–––
–––
56
99
-1.0
85
150
ID = -5.6A
nC VDS = -24V
VGS = -10V, See Fig.6 & 9
VDD = -15V
ID = -5.6A
ns
RG = 6.2
RD = 2.7See Fig.10
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = -5.6A,VGS = 0V
ns TJ = 25°C ,IF = -5.6A,
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 25mH, RG = 25, IAS = -5.6A. (See Fig. 12)
ISD -5.6A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t 10sec.
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2015-9-30
AUIRF7416Q
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
TOP
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
1
-VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
10
-VDS , Drain-to-Source Voltage (V)
A
I D = -5.6A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
Vs. Temperature
2015-9-30
AUIRF7416Q
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
-V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
3000
Ciss
Coss
2000
1000
Crss
I D = -5.6A
VDS = -24V
VDS = -15V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
1
10
100
0
A
20
60
80
A
100
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
40
TJ = 150°C
10
TJ = 25°C
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
VGS = 0V
1
0.4
0.6
0.8
1.0
A
1
10
100
-VDS , Drain-to-Source Voltage (V)
1.2
-VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
2015-9-30
AUIRF7416Q
Fig 10a. Switching Time Test Circuit
Fig 9a. Gate Charge Waveform
Fig 10b. Switching Time Waveforms
Fig 9b. Gate Charge Test Circuit
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRF7416Q
EAS , Single Pulse Avalanche Energy (mJ)
1000
Fig 12a. Unclamped Inductive Test Circuit
TOP
800
BOTTOM
ID
-2.5A
-4.5A
-5.6A
600
400
200
0
25
50
75
100
125
150
o
Starting T J, Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
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AUIRF7416Q
Fig 13. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
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AUIRF7416Q
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
D
D IM
B
8
6
7
6
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B ASIC
1.27 B ASIC
e1
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
0.25 [ .010]
A1
C
A
M AX
.025 B ASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M AX
5
A
IN C H ES
M IN
y
0.10 [ .004]
B
8X L
F O O T P R IN T
N O TE S :
1.
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2.
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3.
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4.
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
8X c
7
8 X 0 .7 2 [ .0 2 8 ]
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
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AUIRF7416Q
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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AUIRF7416Q
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SO-8
MSL1
Class M4 (+/- 425V)†
AEC-Q101-002
Class H1B (+/- 1000V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/27/2014
9/30/2015
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 6.
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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