AUIRF7484QTR

AUTOMOTIVE GRADE   AUIRF7484Q HEXFET® Power MOSFET Features  Advanced Planar Technology  Low On-Resistance  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   1 8 S 2 7 S 3 6 D G 4 5 D Package Type AUIRF7484Q SO-8 D 40V RDS(on) max. ID Top View Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number VDSS A A D S 10m 14A SO-8 AUIRF7484Q G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7484QTR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TA = 25°C Continuous Drain Current 14 ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation  11 110 2.5 VGS EAS IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Thermal Resistance   Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient  Units A W 0.02 ± 8.0 230 See Fig.19,20, 16b, 16c -55 to + 150 W/°C V mJ A mJ °C  Typ. Max. Units ––– ––– 20 50 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-16 AUIRF7484Q   Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.040 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 10 mVGS = 7.0V, ID = 14A  1.0 ––– 2.0 V VDS = VGS, ID = 250µA 40 ––– ––– S VDS = 10V, ID = 14A ––– ––– 20 VDS =40V, VGS = 0V µA ––– ––– 250 VDS = 32V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 8.0V nA ––– ––– -200 VGS = -8.0V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 69 9.0 16 9.3 5.0 180 58 3520 660 76 100 ––– ––– ––– ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 2.3 ––– ––– 110 ––– ––– ––– ––– 59 110 1.3 89 170 ID = 14A nC   VDS = 32V VGS = 7.0V VDD = 20V ID = 1.0A ns RG = 6.2 VGS = 7.0V  VGS = 0V pF   VDS = 25V ƒ = 1.0MHz Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 2.3A,VGS = 0V  ns TJ = 25°C ,IF = 2.3A, nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:      Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle  2%. Surface mounted on 1" in square Cu board. Starting TJ = 25°C, L = 2.3mH, RG = 25, IAS = 14A. (See Fig. 12) Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance. 2 2015-11-16 AUIRF7484Q   100000 10000 VGS 7.5V 7.0V 4.5V 3.0V 2.5V 2.3V 2.0V BOTTOM 1.8V VGS 7.5V 7.0V 4.5V 3.0V 2.5V 2.3V 2.0V BOTTOM 1.8V TOP 1000 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10000 TOP 100 10 1 1.8V 0.1 20µs PULSE WIDTH Tj = 25°C 1000 0.01 100 10 1.8V 1 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 0.1 1 VDS , Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics 2.0 100.00 T J = 150°C T J = 25°C VDS = 15V 20µs PULSE WIDTH 0.10 1.0 2.0 3.0 I D = 14A 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current  ) 1000.00 1.00 100 VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 10.00 10 1.0 0.5 V GS = 10V 0.0 -60 4.0 -40 -20 0 20 40 TJ, Junction Temperature 60 80 100 120 140 160 ( ° C) VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 Fig. 4 Normalized On-Resistance vs. Temperature 2015-11-16 AUIRF7484Q   8 C, Capacitance(pF) 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 7 Coss = Cds + Cgd 6 VGS, Gate-to-Source Voltage (V) 100000 Ciss Coss 1000 Crss 100 I D = 14A V DS = 32V V DS = 20V V DS = 8V 5 4 3 2 1 0 10 0 1 10 100 10 20 30 40 50 60 70 80 Q G, Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 100 T J = 150°C 10 T J = 25°C 1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 100µsec 10 1msec 1.4 10msec 1 0.1 0.10   4 OPERATION IN THIS AREA LIMITED BY R DS (on) Tc = 25°C Tj = 150°C Single Pulse 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-11-16 AUIRF7484Q   15 I D, Drain Current (A) 12 9 6 Fig 10a. Switching Time Test Circuit 3 0 25 50 75 100 125 150 ( ° C) TC, Case Temperature Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 10 0.20 Thermal Response 0.10 0.05 P DM 0.02 1 t1 0.01 t2 SINGLEPULSE (THERMAL RESPONSE) Notes: 1. Dutyfactor D = 2. PeakT 0.1 0.0001 0.001 0.01 0.1 1 t 1/ t J = P DM x Z 10 2 thJA +T A 100 1000 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-11-16 AUIRF7484Q RDS (on) , Drain-to-Source On Resistance ( m ) R DS(on) , Drain-to -Source On Resistance ( m )   16.0 15.0 14.0 13.0 12.0 ID = 14A 11.0 10.0 9.0 8.0 2.0 3.0 4.0 5.0 6.0 7.0 9.40 9.30 9.20 9.10 9.00 VGS = 7.0V 8.90 8.80 8.70 8.60 0 8.0 20 40 60 80 100 120 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 50 1.7 40 1.6 1.5 ID = 250µA 1.4 Power (W) VGS(th) Gate threshold Voltage (V) 1.8 1.3 20 1.2 1.1 10 1.0 0.9 0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig. 14. Typical Threshold Voltage Vs. Junction Temperature 6 30 1.00 10.00 100.00 1000.00 Time (sec) Fig 15. Typical Power Vs. Time 2015-11-16 AUIRF7484Q   15V 520 ID 6.3A 11A 14A TOP EAS , Single Pulse Avalanche Energy (mJ) 416 BOTTOM DRIVER L VDS D.U.T RG + V - DD IAS 312 20V A 0.01 tp 208 Fig 16b. Unclamped Inductive Test Circuit 104 V(BR)DSS tp 0 25 50 75 100 Starting Tj, Junction Temperature 125 150 ( ° C) Fig 16a. Maximum Avalanche Energy vs. Drain Current I AS Fig 16c. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit   7 Qgd Qgodr Fig 18. Basic Gate Charge Waveform 2015-11-16 AUIRF7484Q   100 Avalanche Current (A) Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming  Tj = 25°C due to avalanche losses 0.01 1 0.05 0.10 0.1 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tav (sec) Fig 19. Typical Avalanche Current vs. Pulse width 250 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 14A EAR , Avalanche Energy (mJ) 225 200 Notes on Repetitive Avalanche Curves , Figures 19, 20: (For further info, see AN-1005 at www.infineon.com) 175 150 125 100 75 50 25 0 25 50 75 100 125 Starting T J , Junction Temperature (°C) 150 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16b, 16c. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 11, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 20. Maximum Avalanche Energy vs. Temperature   8 2015-11-16 AUIRF7484Q   SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/   9 2015-11-16 AUIRF7484Q   SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-11-16 AUIRF7484Q   Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model   ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M3 (+/- 300V)† AEC-Q101-002 Class H1C (+/- 2000V)† AEC-Q101-001 Class C5 (+/- 2000V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 11/16/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   11 2015-11-16