AUIRF7665S2TR
AUTOMOTIVE GRADE
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8 with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
RG (typical)
Qg (typical)
SC
M2
DirectFET® ISOMETRIC
SB
Applicable DirectFET® Outline and Substrate Outline
SB
100V
51m
62m
3.5
8.3nC
M4
L4
L6
L8
Description
®
The AUIRF7665S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to
®
produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
®
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize
thermal transfer in automotive power systems.
®
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
®
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Base Part Number
AUIRF7665S2
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRF7665S2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
100
±20
14.4
10.2
4.1
77
58
30
2.4
37
56
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF7665S2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Can
RJ-Can
Junction-to-PCB Mounted
RJ-PCB
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.4
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
––– 0.10 ––– V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
51
62
Static Drain-to-Source On-Resistance
RDS(on)
m
VGS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
Gate Threshold Voltage Coefficient
–––
-13
––– mV/°C
VGS(th)/TJ
gfs
Forward Transconductance
8.8
–––
–––
S
RG
Internal Gate Resistance
–––
3.5
5.0
–––
–––
5.0
Drain-to-Source Leakage Current
µA
IDSS
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
8.3
13
Qgs1
Gate-to-Source Charge
–––
1.9
–––
Qgs2
Gate-to-Source Charge
––– 0.77 –––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
3.2
–––
Qgodr
Gate Charge Overdrive
–––
2.4
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.0
–––
Qoss
Output Charge
–––
4.7
–––
nC
td(on)
Turn-On Delay Time
–––
3.8
–––
tr
Rise Time
–––
6.4
–––
ns
td(off)
Turn-Off Delay Time
–––
7.1
–––
tf
Fall Time
–––
3.6
–––
Ciss
Input Capacitance
–––
515
–––
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
30
–––
pF
Coss
Output Capacitance
–––
530
–––
Coss
Output Capacitance
–––
70
–––
Coss
Output Capacitance
–––
115
–––
Max.
63
–––
–––
5.0
–––
0.2
Units
°C/W
W/°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 8.9A
VDS = VGS, ID = 25µA
VDS = 25V, ID = 8.9A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Conditions
VDS = 50V
VGS = 10V
ID = 8.9A
See Fig. 11
VDS = 16V, VGS = 0V
VDD = 50V
ID = 8.9A
RG = 6.8
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 80V, ƒ = 1.0 MHz
VGS = 0V, VDS = 0 to 80V
Notes through are on page 3
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AUIRF7665S2TR
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Min.
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
33
38
Max. Units
Conditions
MOSFET symbol
14.4
showing the
A
integral reverse
58
p-n junction diode.
1.3
V TJ = 25°C, IS = 8.9A, VGS = 0V
–––
ns TJ = 25°C, IF = 8.9A, VDD = 25V
–––
nC dv/dt = 100A/µs
D
G
Mounted to a PCB with
small clip heatsink (still air)
S
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.944mH, RG = 25, IAS = 8.9A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
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AUIRF7665S2TR
100
100
ID, Drain-to-Source Current (A)
10
BOTTOM
1
0.1
0.01
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
10
BOTTOM
1
5.0V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.001
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
120
100
T J = 125°C
80
T J = 25°C
40
8
9
10
11
12
13
14
15
R DS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
ID = 8.9A
7
320
Vgs = 10V
280
240
200
T J = 125°C
160
120
T J = 25°C
80
40
0
10
V GS, Gate -to -Source Voltage (V)
30
40
Fig. 4 Typical On-Resistance vs. Drain Current
100
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
20
ID , Drain Current (A)
Fig. 3 Typical On-Resistance vs. Gate Voltage
10
1
T J = -40°C
TJ = 25°C
TJ = 175°C
0.1
VDS = 25V
60µs PULSE WIDTH
0.01
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
100
Fig. 2 Typical Output Characteristics
140
6
10
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
60
1
16
ID = 8.9A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
2015-10-5
AUIRF7665S2TR
T J = -40°C
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
100
6.5
5.5
4.5
3.5
ID = 25µA
ID = 250µA
ID = 1.0mA
D = 1.0A
2.5
TJ = 25°C
TJ = 175°C
10
1
0.1
VGS = 0V
1.5
0.01
-75 -50 -25
0
25 50 75 100 125 150 175
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T J , Temperature ( °C )
VSD , Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
10000
18
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
T J = 25°C
16
Coss = Cds + Cgd
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
20
14
12
10
T J = 175°C
8
6
1000
C iss
Coss
100
Crss
4
V DS = 10V
2
380µs PULSE WIDTH
10
0
0
2
4
6
8
10
12
14
16
1
18
ID ,Drain-to-Source Current (A)
Fig 9. Typical Forward Trans conductance vs. Drain Current
16
ID = 8.9A
12.0
14
VDS = 80V
VDS = 50V
VDS= 20V
10.0
12
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
14.0
8.0
6.0
4.0
2.0
10
8
6
4
2
0
0.0
0
2
4
6
8
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
10
VDS , Drain-to-Source Voltage (V)
10
12
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-10-5
AUIRF7665S2TR
160
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
10
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
DC
ID
TOP
1.64A
3.04A
BOTTOM 8.90A
140
120
100
80
60
40
20
0
0.01
0
1
10
100
25
1000
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS , Drain-to-Source Voltage (V)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
J
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
1
2
2
3
3
4
4
Ci= iRi
Ci= iRi
0.01
1E-005
i (sec)
0.000119
0.00517
8.231486
2.55852
0.018926
1.94004
0.002741
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
Ri (°C/W)
0.49687
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
0.01
0.05
1
0.10
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
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AUIRF7665S2TR
40
35
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 8.9A
30
25
20
15
10
5
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
7
Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
2015-10-5
AUIRF7665S2TR
DirectFET® Board Footprint, SB (Small Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® .
This includes all recommendations for stencil and substrate designs.
CL
G = GATE
D = DRAIN
S = SOURCE
D
D
G
D
S
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-10-5
AUIRF7665S2TR
DirectFET® Outline Dimension, SB Outline (Small Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes
all recommendations for stencil and substrate designs.
DirectFET® Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7665S2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
F
A
B
E
C
D
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts, ordered as AUIRF7665S2TR.
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992
A
N.C
330.0
N.C
B
0.795
20.2
N.C
N.C
C
0.504
12.8
0.520
13.2
D
0.059
1.5
N.C
N.C
E
3.937
100.0
N.C
N.C
F
N.C
N.C
0.724
18.4
G
0.488
12.4
0.567
14.4
H
0.469
11.9
0.606
15.4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7665S2TR
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Small Can
MSL1
Class B
AEC-Q101-002
Class 2
AEC-Q101-001
Class IV
AEC-Q101-005
Yes
Revision History
Date
10/5/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated Tape and Reel option on page 10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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