AUIRF7736M2TR

  AUIRF7736M2TR AUTOMOTIVE GRADE   Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free Automotive Qualified *         Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg (typical)     D SC M2 S S S S G D DirectFET® ISOMETRIC M4 Applicable DirectFET® Outline and Substrate Outline  SB 40V 2.5m 3.0m 108A 72nC M4 L4 L6 L8 Description The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7736M2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications Base Part Number   AUIRF7736M2 Package Type   DirectFET Medium Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number   AUIRF7736M2TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (Tested) IAR EAR TP TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)  Continuous Drain Current, VGS @ 10V (Silicon Limited)  Continuous Drain Current, VGS @ 10V (Silicon Limited)  Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation  Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Soldering Temperature Operating Junction and Storage Temperature Range Max. 40 ±20 108 77 22 179 432 63 2.5 54 286 See Fig. 16, 17, 18a, 18b 270 -55 to + 175 Units V A W mJ A mJ °C   HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-5 AUIRF7736M2TR   Thermal Resistance Symbol Parameter Junction-to-Ambient  RJA Junction-to-Ambient  RJA Junction-to-Ambient  RJA Junction-to-Can  RJ-Can Junction-to-PCB Mounted RJ-PCB Linear Derating Factor  Typ. ––– 12.5 20 ––– 1.0 Output Capacitance Effective Output Capacitance Units °C/W   0.42 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ––– 0.03 ––– V/°C V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 2.5 3.0 Static Drain-to-Source On-Resistance RDS(on) m VGS(th) Gate Threshold Voltage 2.0 3.0 4.0 V Gate Threshold Voltage Coefficient ––– -9.0 ––– mV/°C VGS(th)/TJ gfs Forward Transconductance 115 ––– ––– S RG Internal Gate Resistance ––– 1.0 –––  ––– ––– 5.0 Drain-to-Source Leakage Current µA IDSS ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 72 108 Qgs1 Gate-to-Source Charge ––– 15 ––– Qgs2 Gate-to-Source Charge ––– 6.3 ––– nC   Qgd Gate-to-Drain ("Miller") Charge ––– 26 ––– Qgodr Gate Charge Overdrive ––– 24.7 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 32.3 ––– Qoss Output Charge ––– 31 ––– nC td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time ––– 43 ––– ns td(off) Turn-Off Delay Time ––– 39 ––– tf Fall Time ––– 27 ––– Ciss Input Capacitance ––– 4267 ––– Coss Output Capacitance ––– 943 ––– Crss Reverse Transfer Capacitance ––– 422 ––– pF Coss Output Capacitance ––– 3489 ––– Coss Coss eff. Max. 60 ––– ––– 2.4 ––– ––– ––– 843 1222 ––– ––– W/°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 65A  VDS = VGS, ID = 150µA VDS = 10V, ID = 65A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Conditions VDS = 20V VGS = 10V ID = 65A See Fig.11 VDS = 16V, VGS = 0V VDD = 20V, VGS = 10V  ID = 65A RG = 6.8 VGS = 0V VDS = 25V ƒ = 1.0 MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz VGS = 0V, VDS = 32V, ƒ = 1.0 MHz VGS = 0V, VDS = 0V to 32V Notes  through  are on page 3 2 2015-10-5 AUIRF7736M2TR   Diode Characteristics Symbol Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode)  Diode Forward Voltage VSD trr   Reverse Recovery Time Qrr Reverse Recovery Charge  Surface mounted on 1 in. square Cu board (still air).               Min. Typ. ––– ––– ––– ––– ––– ––– ––– ––– 35 38     Max. Units Conditions MOSFET symbol 108 showing the A integral reverse 432 p-n junction diode. 1.3 V TJ = 25°C, IS = 65A, VGS = 0V  53 ns TJ = 25°C, IF = 65A, VDD = 25V 57 nC dv/dt = 100A/µs  D G  Mounted to a PCB with small clip heatsink (still air) S  Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET® Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.026mH, RG = 50, IAS = 65A, VGS = 20V. Pulse width  400µs; duty cycle  2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at TJ of approximately 90°C. 3 2015-10-5 AUIRF7736M2TR   1000 1000 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 5.0V BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 5.0V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.1 10 1 10 0.1 100 V DS, Drain-to-Source Voltage (V) 7 ID = 65A 5 T J = 125°C 4 3 2 T J = 25°C 1 4 6 8 10 12 14 16 18 20 T J = 125°C 3.5 3.0 2.5 T J = 25°C 2.0 Vgs = 10V 1.5 0 50 100 150 200 ID, Drain Current (A) Fig. 3 Typical On-Resistance vs. Gate Voltage Fig. 4 Typical On-Resistance vs. Drain Current 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 100 4.0 VGS, Gate -to -Source Voltage (V) 100 T J = -40°C 10 TJ = 25°C TJ = 175°C 1 VDS = 25V 60µs PULSE WIDTH 0.1 1.8 ID = 65A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V) Fig 5. Transfer Characteristics 4 10 Fig. 2 Typical Output Characteristics R DS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) Fig. 1 Typical Output Characteristics 6 1 V DS, Drain-to-Source Voltage (V) 9 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature 2015-10-5 AUIRF7736M2TR   1000 4.5 ISD, Reverse Drain Current (A) VGS(th) , Gate threshold Voltage (V) 5.0 4.0 3.5 3.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 150µA 2.5 2.0 T J = -40°C TJ = 25°C TJ = 175°C 100 10 VGS = 0V 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 0.3 T J , Temperature ( °C ) 100000 0.9 1.1 1.3 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 200 C, Capacitance (pF) Gfs, Forward Transconductance (S) 250 T J = 25°C 150 T J = 175°C 100 50 10000 C iss Coss 1000 Crss V DS = 5V 380µs PULSE WIDTH 100 0 0 20 40 60 80 100 1 120 Fig 9. Typical Forward Trans conductance vs. Drain Current 12 120 VDS = 32V VDS = 20V 100 VDS= 8V ID, Drain Current (A) 10 100 Fig 10. Typical Capacitance vs. Drain-to-Source Voltage 14 ID= 65A 10 VDS , Drain-to-Source Voltage (V) ID ,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) 0.7 Fig 8. Typical Source-Drain Diode Forward Voltage Fig. 7 Typical Threshold Voltage vs. Junction Temperature 8 6 4 2 80 60 40 20 0 0 20 40 60 80 QG, Total Gate Charge (nC) Fig 11. Typical Gate Charge vs. Gate-to-Source Voltage   5 0.5 VSD , Source-to-Drain Voltage (V) 100 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 2015-10-5 AUIRF7736M2TR   250 OPERATION IN THIS AREA LIMITED BY RDS(on) EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 1000 100 100µsec 1msec 10 10msec DC 1 Tc = 25°C Tj = 175°C Single Pulse ID 14A 32A BOTTOM 65A TOP 200 150 100 50 0.1 0 0.10 1 10 100 25 VDS, Drain-to-Source Voltage (V) 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Temperature Fig 13. Maximum Safe Operating Area Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.02 0.01 0.05 0.1 J R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 3 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 4 4 C Ri (°C/W) 0.07641 i (sec) 0.000021 0.36635 0.000737 0.94890 0.039150 1.00767 0.007321 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R4 R4 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 16. Typical Avalanche Current vs. Pulse Width 6 2015-10-5 AUIRF7736M2TR   EAR , Avalanche Energy (mJ) 60 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 15) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 65A 50 40 30 20 10 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature Fig 18a. Unclamped Inductive Test Circuit PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 18b. Unclamped Inductive Waveforms VDD  Fig 19a. Gate Charge Test Circuit Fig 20a. Switching Time Test Circuit 7 Fig 19b. Gate Charge Waveform Fig 20b. Switching Time Waveforms 2015-10-5 AUIRF7736M2TR   DirectFET® Board Footprint, M4 (Medium Size Can). Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D S S S S G D D Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-5 AUIRF7736M2TR   DirectFET® Outline Dimension, M4 Outline (Medium Size Can). Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes all recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J K L L1 M P R METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.58 0.62 0.78 0.82 0.78 0.82 0.78 0.82 0.38 0.42 1.10 1.20 2.30 2.40 3.50 3.60 0.68 0.74 0.09 0.17 0.02 0.08 IMPERIAL MAX MIN 0.250 0.246 0.189 0.199 0.152 0.156 0.014 0.018 0.023 0.024 0.032 0.031 0.031 0.032 0.031 0.032 0.015 0.017 0.043 0.047 0.090 0.094 0.138 0.142 0.027 0.029 0.003 0.007 0.001 0.003 DirectFET® Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-5 AUIRF7736M2TR   DirectFET® Tape & Reel Dimension (Showing component orientation) LOADED TAPE FEED DIRECTION H F C D E A B A D C B F E NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H G DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 G H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts, ordered as AUIRF7736M2TR. REEL DIMENSIONS STANDARD OPTION (QTY 4800) IMPERIAL METRIC MIN CODE MAX MIN MAX 12.992 A N.C 330.0 N.C 0.795 B 20.2 N.C N.C 0.504 C 12.8 0.520 13.2 0.059 D 1.5 N.C N.C E 3.937 100.0 N.C N.C F N.C N.C 0.724 18.4 G 0.488 12.4 0.567 14.4 H 0.469 11.9 0.606 15.4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-5 AUIRF7736M2TR   Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model   ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. DFET2 Medium Can MSL1, 260°C Class M4 (+/- 400V)† AEC-Q101-002 Class H3B (+/- 8000V)† AEC-Q101-001 N/A AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 10/5/2015 Comments    Updated datasheet with corporate template Corrected ordering table on page 1. Updated Tape and Reel option on page 10 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   11 2015-10-5