AUTOMOTIVE GRADE
AUIRF7749L2TR
Automotive DirectFET™ Power MOSFET
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
60V
1.1m
1.5m
345A
183nC
S
S
S
D
G
S
S
S
Applicable DirectFET™ Outline and Substrate Outline
SB
SC
M2
D
S
S
DirectFET2 L-can
L8
M4
L4
L6
L8
Description
The AUIRF7749L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging
technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The DirectFET™
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package
allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET™ packaging
platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
AUIRF7749L2
Standard Pack
Form
Quantity
Package Type
DirectFET™ Large Can
Tape and Reel
4000
Orderable Part Number
AUIRF7749L2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package limit)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
60
345
243
36
375
1380
341
3.8
315
714
Units
V
A
W
mJ
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
A
mJ
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at : www.infineon.com
1
2016-10-11
AUIRF7749L2TR
Thermal Resistance
Symbol
RJA
RJA
RJA
RJ-Can
RJ-PCB
Parameter
Typ.
–––
12.5
20
–––
–––
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
–––
56
–––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
1.1
1.5
Static Drain-to-Source On-Resistance
RDS(on)
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
Gate Threshold Voltage Coefficient
––– -8.8
–––
VGS(th)/TJ
gfs
Forward Trans conductance
185
–––
–––
RG
Internal Gate Resistance
–––
1.5
–––
–––
–––
20
Drain-to-Source Leakage Current
IDSS
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Qg
Total Gate Charge
–––
183
275
Qgs1
Gate-to-Source Charge
–––
39
–––
Qgs2
Gate-to-Source Charge
–––
19
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
46
–––
Qgodr
Gate Charge Overdrive
–––
79
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
65
–––
Qoss
Output Charge
–––
119
–––
td(on)
Turn-On Delay Time
–––
29
–––
tr
Rise Time
–––
149
–––
td(off)
Turn-Off Delay Time
–––
72
–––
tf
Fall Time
–––
88
–––
Ciss
Input Capacitance
––– 10655 –––
Coss
Output Capacitance
––– 1627 –––
Crss
Reverse Transfer Capacitance
–––
680
–––
Coss eff.
Effective Output Capacitance
––– 1959 –––
Max.
40
–––
–––
0.44
0.5
Units
°C/W
2.3
W/°C
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 3.0mA
m VGS = 10V, ID = 120A
V
V = VGS, ID = 250µA
mV/°C DS
S VDS = 10V, ID = 120A
µA
nA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Units
nC
Conditions
VDS = 30V
VGS = 10V
ID = 120A
nC
ns
pF
VDS = 48V, VGS = 0V
VDD = 30V, VGS = 10V
ID = 120A
RG = 1.8
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 48V
Notes through are on page 11
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2016-10-11
AUIRF7749L2TR
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
Typ.
Max.
–––
–––
345
–––
–––
1380
–––
–––
–––
–––
42
54
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 120A, VGS = 0V
IF = 120A, VDD = 30V
di/dt = 100A/µs
Notes through are on page 11
Surface mounted on 1 in.
square Cu board (still air).
3
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
2016-10-11
AUIRF7749L2TR
10000
10000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
1000
1
BOTTOM
100
4.5V
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
8
T J = 25°C
ID = 120A
Typical RDS(on) ( m )
6.0
4.0
TJ = 125°C
2.0
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
6
4
2
TJ = 25°C
0.0
6
8
10
12
14
16
18
0
20
0
40
80
V GS, Gate -to -Source Voltage (V)
120
160
200
ID, Drain Current (A)
Fig. 3 Typical On-Resistance vs. Gate Voltage
Fig. 4 Typical On-Resistance vs. Drain Current
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
10000
V DS = 25V
ID, Drain-to-Source Current (A)
100
Fig. 2 Typical Output Characteristics
8.0
4
60µs PULSE WIDTH
1000
100
TJ = 25°C
TJ = 175°C
10
1
0.1
2.0
3.0
4.0
5.0
6.0
V GS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
10
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance (m )
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
7.0
1.8
ID = 120A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
2016-10-11
AUIRF7749L2TR
10000
V GS(th) Gate threshold Voltage (V)
4.5
3.5
3.0
ID = 250µA
ID = 1.0mA
2.5
ID = 1.0A
2.0
1000
ISD, Reverse Drain Current (A)
4.0
TJ = 175°C
100
TJ = 25°C
10
1
V GS = 0V
1.5
0.1
-75 -50 -25
0
25
50
75
100 125 150 175
0.2
TJ , Temperature ( °C )
0.6
0.8
1.0
1.2
1.4
V SD, Source-to-Drain Voltage (V)
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
320
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
TJ = 25°C
C oss = C ds + C gd
240
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
0.4
TJ = 175°C
160
80
Ciss
Coss
10000
Crss
1000
V DS = 5.0V
380µs PULSE WIDTH
0
100
0
20
40
60
80 100 120 140 160 180
0.1
1
10
100
ID, Drain-to-Source Current (A)
V DS, Drain-to-Source Voltage (V)
Fig 9. Typical Forward Trans conductance vs. Drain Current
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
350
ID= 120A
300
VDS = 48V
12
ID , Drain Current (A)
VGS, Gate-to-Source Voltage (V)
16
VDS = 30V
VDS= 12V
8
4
200
150
100
50
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
250
240
0
25
50
75
100
125
150
175
TC , CaseTemperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2016-10-11
AUIRF7749L2TR
EAS, Single Pulse Avalanche Energy (mJ)
1400
ID, Drain-to-Source Current (A)
1000
100µsec
100
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
I D
15A
35A
BOTTOM 120A
1200
TOP
1000
800
600
400
200
0
0.1
0.1
1
25
10
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
VDS , Drain-toSource Voltage (V)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
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AUIRF7749L2TR
350
300
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1035 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 120A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
7
Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
2016-10-11
AUIRF7749L2TR
DirectFET™ Board Footprint, L8 Outline
(Large Size Can, 8-Source Pads)
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
8
S
S
S
S
G
D
D
S
S
S
S
D
2016-10-11
AUIRF7749L2TR
DirectFET™ Outline Dimension, L8 Outline
(Large Size Can, 8-Source Pads)
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MAX
MIN
0.360
0.356
0.280
0.270
0.236
0.232
0.026
0.022
0.024
0.023
0.048
0.046
0.039
0.040
0.029
0.030
0.015
0.017
0.053
0.057
0.100
0.104
0.211
0.215
0.027
0.029
0.003
0.007
0.001
0.003
Dimensions are shown in
millimeters (inches)
DirectFET™ Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
9
2016-10-11
AUIRF7749L2TR
DirectFET™ Tape & Reel Dimension (Showing component orientation)
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as AUIRF7749L2TR).
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992
A
330.00
N.C
N.C
0.795
B
20.20
N.C
N.C
C
0.504
12.80
0.520
13.20
D
0.059
1.50
N.C
N.C
E
3.900
99.00 100.00
3.940
F
N.C
N.C
0.880
22.40
G
0.650
16.40
0.720
18.40
H
0.630
15.90
0.760
19.40
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
10
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
4.69
0.476
11.90
12.10
0.154
0.161
3.90
4.10
0.623
0.642
15.90
16.30
0.291
0.299
7.40
7.60
0.283
0.291
7.20
7.40
0.390
0.398
9.90
10.10
0.059
N.C
1.50
N.C
0.059
1.50
0.063
1.60
2016-10-11
AUIRF7749L2TR
Qualification Information
Qualification Level
Moisture Sensitivity Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
DirectFET2 L-CAN
Machine Model
ESD
Human Body Model
RoHS Compliant
†
MSL1
Class M4 (+/- 800V)
†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Yes
Highest passing voltage.
Click on this section to link to the appropriate technical
paper.
Click on this section to link to the Direct FET™ Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain)
of part.
Repetitive rating; pulse width limited by max. junction
temperature.
11
Limited by TJmax, Starting TJ = 25°C, L = 0.044mH,
RG = 50, IAS = 120A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large
heat sink.
Mounted on minimum footprint full size board with
metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
2016-10-11
AUIRF7749L2TR
Revision History
Date
10/11/2016
Comments
Changed datasheet with “Infineon” logo –all pages.
Corrected typo on Absolute Maximum Ratings table –from “VGS” to “VDS” on page 1.
Added disclaimer on last page.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
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