AUIRF7759L2TR
AUTOMOTIVE GRADE
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
D
SC
M2
G
S
S
S
S
S
S
S
S
D
DirectFET® ISOMETRIC
L8
Applicable DirectFET® Outline and Substrate Outline
SB
75V
1.8m
2.3m
160A
200nC
M4
L4
L6
L8
Description
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and performance
improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET
utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and
reliable device for high current automotive applications.
Base Part Number
AUIRF7759L2
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
Orderable Part Number
AUIRF7759L2TR
4000
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Max.
75
±20
160
113
26
375
640
125
63
3.3
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
EAS
Single Pulse Avalanche Energy (Thermally Limited)
257
mJ
IAR
EAR
TP
TJ
TSTG
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
See Fig. 16, 17, 18a, 18b
A
mJ
270
-55 to + 175
V
A
W
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF7759L2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Can
RJ-Can
RJ-PCB
Typ.
–––
12.5
20
–––
Junction-to-PCB Mounted
Linear Derating Factor
–––
Output Capacitance
Units
°C/W
0.5
0.83
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
––– 0.02 ––– V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
1.8
2.3
Static Drain-to-Source On-Resistance
RDS(on)
m
VGS(th)
Gate Threshold Voltage
2.0
3.0
4.0
V
Gate Threshold Voltage Coefficient
–––
-11
––– mV/°C
VGS(th)/TJ
gfs
Forward Transconductance
74
–––
–––
S
–––
–––
20
IDSS
Drain-to-Source Leakage Current
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
200
300
Qgs1
Gate-to-Source Charge
–––
37
–––
Qgs2
Gate-to-Source Charge
–––
11
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
62
93
Qgodr
Gate Charge Overdrive
–––
91
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
73
–––
Qoss
Output Charge
–––
60
–––
nC
RG
Internal Gate Resistance
–––
1.1
–––
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––
37
–––
ns
td(off)
Turn-Off Delay Time
–––
80
–––
tf
Fall Time
–––
33
–––
Ciss
Input Capacitance
––– 12222 –––
Coss
Output Capacitance
––– 1465 –––
Crss
Reverse Transfer Capacitance
–––
609
–––
pF
Coss
Output Capacitance
––– 7457 –––
Coss
Max.
45
–––
–––
1.2
–––
955
–––
W/°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 2.0mA
VGS = 10V, ID = 96A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 96A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Conditions
VDS = 38V
VGS = 10V
ID = 96A
See Fig.11
VDS = 16V, VGS = 0V
VDD = 38V, VGS = 10V
ID = 96A
RG = 1.8
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 60V, ƒ = 1.0 MHz
Notes through are on page 3
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AUIRF7759L2TR
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Min.
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
64
150
Max. Units
Conditions
MOSFET symbol
160
showing the
A
integral reverse
640
p-n junction diode.
1.3
V TJ = 25°C, IS = 96A, VGS = 0V
96
ns TJ = 25°C, IF = 96A, VDD = 38V
225
nC dv/dt = 100A/µs
D
G
Mounted to a PCB with
small clip heatsink (still air)
S
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.056mH, RG = 25, IAS = 96A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
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AUIRF7759L2TR
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
1000
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
TOP
100
1
3.75V
0.1
60µs PULSE WIDTH
BOTTOM
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
3.75V
10
60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.01
0.1
1
10
1
100
0.1
1
V DS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
1.95
8
RDS(on), Drain-to -Source On Resistance (m )
100
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
TA= 25°C
VGS= 7.0V
DS(on) (m
ID = 96A
6
1.85
Typical R
T J = 125°C
4
2
VGS= 8.0V
VGS= 10V
1.75
VGS= 15V
T J = 25°C
1.65
0
15
2
4
6
8
10
12
14
16
18
30
20
Fig. 3 Typical On-Resistance vs. Gate Voltage
60
75
90
105
Fig. 4 Typical On-Resistance vs. Drain Current
2.5
1000
VDS = 25V
60µs PULSE WIDTH
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
45
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
100
10
T J = 175°C
TJ = 25°C
TJ = -40°C
1
0.1
ID = 96A
VGS = 10V
2.0
1.5
1.0
0.5
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS, Gate-to-Source Voltage (V)
Fig 5.
4
10
Typical Transfer Characteristics
-60
-20
20
60
100
140
180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
2015-10-5
AUIRF7759L2TR
1000
T J = 175°C
4.0
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
4.5
3.5
3.0
2.5
2.0
ID = 1.0A
ID = 1.0mA
ID = 250µA
1.5
1.0
TJ = 25°C
TJ = -40°C
100
10
1
VGS = 0V
0.5
0.1
-75 -50 -25
0
25
50
75 100 125 150 175
0.2
T J , Temperature ( °C )
0.6
0.8
1.0
1.2
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
100000
600
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
500
Coss = Cds + Cgd
T J = 25°C
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
0.4
VSD , Source-to-Drain Voltage (V)
400
300
T J = 175°C
200
C iss
10000
C oss
C rss
1000
V DS = 25V
100
20µs PULSE WIDTH
100
0
0
50
100
150
200
250
1
300
10
100
ID ,Drain-to-Source Current (A)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Forward Trans conductance vs. Drain Current
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
14
10
200
VDS = 60V
VDS = 38V
VDS= 15V
160
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
ID = 96A
12
8
6
4
80
40
2
0
0
50
100
150
200
250
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
120
300
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-10-5
AUIRF7759L2TR
10000
EAS , Single Pulse Avalanche Energy (mJ)
1200
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
100
100µsec
DC
1msec
10
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
ID
15.39A
23.97A
BOTTOM 96A
TOP
1000
800
600
400
200
0.1
0
0
1
10
100
25
VDS, Drain-to-Source Voltage (V)
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
J
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
3
4
4
Ci= iRi
Ci= iRi
0.001
1E-005
0.0001
i (sec)
0.000171
0.61403
0.053914
0.45202
0.006099
0.00001
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
C
Ri (°C/W)
0.10804
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
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AUIRF7759L2TR
EAR , Avalanche Energy (mJ)
300
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 96A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
7
Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
2015-10-5
AUIRF7759L2TR
DirectFET® Board Footprint, L8 (Large Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® .
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
S
S
S
S
S
S
S
S
G
D
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7759L2TR
DirectFET® Outline Dimension, L8 (Large Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MIN
MAX
0.356
0.360
0.270
0.280
0.232
0.236
0.022
0.026
0.023
0.024
0.046
0.048
0.039
0.040
0.029
0.030
0.015
0.017
0.053
0.057
0.100
0.104
0.211
0.215
0.027
0.029
0.003
0.007
0.001
0.003
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7759L2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts, ordered as AUIRF7759L2TR.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992
A
N.C
330.00
N.C
0.795
B
N.C
20.20
N.C
C
0.504
12.80
0.520
13.20
D
0.059
1.50
N.C
N.C
E
3.900
99.00 100.00
3.940
F
N.C
N.C
0.880
22.40
G
0.650
16.40
0.720
18.40
H
0.630
15.90
0.760
19.40
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
4.69
0.476
11.90
12.10
0.154
0.161
3.90
4.10
0.623
0.642
15.90
16.30
0.291
0.299
7.40
7.60
0.283
0.291
7.20
7.40
0.390
0.398
9.90
10.10
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7759L2TR
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Large Can
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H2 (+/- 6000V)†
AEC-Q101-001
N/A
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/5/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated Tape and Reel option on page 10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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