AUIRF7799L2TR
AUTOMOTIVE GRADE
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
D
SC
M2
G
S
S
S
S
S
S
S
S
D
DirectFET® ISOMETRIC
L8
Applicable DirectFET® Outline and Substrate Outline
SB
250V
32m
38m
35A
110nC
M4
L4
L6
L8
Description
The AUIRF7799L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7799L2TR to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Base Part Number
AUIRF7799L2
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
Orderable Part Number
AUIRF7799L2TR
4000
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Max.
250
±30
35
25
6.6
375
140
125
63
4.3
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
EAS
Single Pulse Avalanche Energy (Thermally Limited)
325
mJ
IAR
EAR
TP
TJ
TSTG
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
See Fig. 16, 17, 18a, 18b
A
mJ
270
-55 to + 175
V
A
W
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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2015-10-5
AUIRF7799L2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Can
RJ-Can
RJ-PCB
Typ.
–––
12.5
20
–––
Junction-to-PCB Mounted
Linear Derating Factor
–––
Output Capacitance
Units
°C/W
0.5
0.83
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
250
–––
–––
V
––– 0.12 ––– V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
32
38
Static Drain-to-Source On-Resistance
RDS(on)
m
VGS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
Gate Threshold Voltage Coefficient
–––
-13
––– mV/°C
VGS(th)/TJ
gfs
Forward Transconductance
54
–––
–––
S
–––
–––
20
µA
Drain-to-Source Leakage Current
IDSS
–––
–––
1
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
110
165
Qgs1
Gate-to-Source Charge
–––
26
–––
Qgs2
Gate-to-Source Charge
–––
5.7
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
39
Qgodr
Gate Charge Overdrive
–––
39
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
45
–––
Qoss
Output Charge
–––
33
–––
nC
RG
Internal Gate Resistance
––– 0.73 –––
td(on)
Turn-On Delay Time
––– 36.3 –––
tr
Rise Time
––– 33.5 –––
ns
td(off)
Turn-Off Delay Time
––– 73.9 –––
tf
Fall Time
––– 26.6 –––
Ciss
Input Capacitance
––– 6714 –––
Coss
Output Capacitance
–––
606
–––
Crss
Reverse Transfer Capacitance
–––
157
–––
pF
Coss
Output Capacitance
––– 5063 –––
Coss
Max.
35
–––
–––
1.2
–––
217
–––
W/°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 2.0mA
VGS = 10V, ID = 21A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 21A
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Conditions
VDS = 125V
VGS = 10V
ID = 21A
See Fig.11
VDS = 16V, VGS = 0V
VDD = 125V, VGS = 10V
ID = 21A
RG = 6.2
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 200V, ƒ = 1.0 MHz
Notes through are on page 3
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2015-10-5
AUIRF7799L2TR
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Min.
–––
Max. Units
Conditions
MOSFET symbol
–––
35
showing the
A
integral reverse
–––
140
p-n junction diode.
–––
1.3
V TJ = 25°C, IS = 21A, VGS = 0V
132
198
ns TJ = 25°C, IF = 21A, VDD = 50V
1412 2118
nC dv/dt = 100A/µs
Typ.
D
G
–––
–––
–––
–––
Mounted to a PCB with
small clip heatsink (still air)
S
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.42mH, RG = 25, IAS = 21A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
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2015-10-5
AUIRF7799L2TR
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
1
5.0V
100
BOTTOM
1
Tj = 175°C
60µs PULSE WIDTH
0.1
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
100
Fig. 2 Typical Output Characteristics
200
60
ID = 21A
180
Typical RDS (on) (m)
140
120
100
80
T J = 125°C
60
40
TJ = 25°C
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
55
160
50
45
40
35
30
T J = 25°C
20
25
4
8
12
16
20
0
20
VGS, Gate -to -Source Voltage (V)
40
60
80
100
ID, Drain Current (A)
Fig. 3 Typical On-Resistance vs. Gate Voltage
Fig. 4 Typical On-Resistance vs. Drain Current
3.0
1000
VDS = 50V
60µs PULSE WIDTH
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
T J = 175°C
TJ = 25°C
TJ = -40°C
10
1
0.1
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 5.
4
5.0V
10
Tj = 25°C
60µs PULSE WIDTH
RDS(on), Drain-to -Source On Resistance (m )
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
Typical Transfer Characteristics
ID = 21A
2.5
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
2015-10-5
AUIRF7799L2TR
1000
ISD, Reverse Drain Current (A)
VGS(th) , Gate Threshold Voltage (V)
6.0
5.0
4.0
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
100
T = 175°C
J
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
1.0
0.1
-75 -50 -25
0
25 50 75 100 125 150 175
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
T J , Temperature ( °C )
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
160
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
200
T J = 25°C
120
T J = 175°C
80
10000
C iss
C oss
1000
C rss
40
V DS = 50V
20µs PULSE WIDTH
100
0
0
20
40
60
80
100
1
120
Fig 9. Typical Forward Trans conductance vs. Drain Current
100
1000
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
14.0
40
ID= 21A
12.0
VDS = 200V
VDS = 125V
VDS= 50V
10.0
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
10
VDS, Drain-to-Source Voltage (V)
ID ,Drain-to-Source Current (A)
8.0
6.0
4.0
30
20
10
2.0
0.0
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
1
VSD , Source-to-Drain Voltage (V)
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-10-5
AUIRF7799L2TR
1400
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID
1.33A
2.53A
BOTTOM 21A
1200
100
TOP
1000
10
100µsec
DC
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
800
600
400
200
0.1
0
1
10
100
1000
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
J
0.10
0.1
0.05
R1
R1
J
1
C
2
1
2
1E-005
0.0001
Ri (°C/W)
0.38829
i (sec)
0.000787
0.8117
0.006586
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
Ci= iRi
Ci= iRi
0.02
0.01
0.01
R2
R2
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
6
2015-10-5
AUIRF7799L2TR
350
300
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 21A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
7
Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
2015-10-5
AUIRF7799L2TR
DirectFET® Board Footprint, L8 (Large Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® .
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
S
S
S
S
S
S
S
S
G
D
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2015-10-5
AUIRF7799L2TR
DirectFET® Outline Dimension, L8 (Large Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MIN
MAX
0.356
0.360
0.270
0.280
0.232
0.236
0.022
0.026
0.023
0.024
0.046
0.048
0.039
0.040
0.029
0.030
0.015
0.017
0.053
0.057
0.100
0.104
0.211
0.215
0.027
0.029
0.003
0.007
0.001
0.003
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7799L2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts, ordered as AUIRF7799L2TR.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992
A
330.00
N.C
N.C
0.795
B
20.20
N.C
N.C
0.504
C
12.80
0.520
13.20
0.059
D
1.50
N.C
N.C
3.900
E
99.00 100.00
3.940
F
N.C
N.C
0.880
22.40
G
0.650
16.40
0.720
18.40
H
0.630
15.90
0.760
19.40
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
4.69
0.476
11.90
12.10
0.154
0.161
3.90
4.10
0.623
0.642
15.90
16.30
0.291
0.299
7.40
7.60
0.283
0.291
7.20
7.40
0.390
0.398
9.90
10.10
0.059
N.C
1.50
N.C
0.059
0.063
1.50
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-10-5
AUIRF7799L2TR
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Large Can
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
N/A
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/5/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated Tape and Reel option on page 10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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