AUIRF8736M2TR
AUTOMOTIVE GRADE
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
SC
M2
DirectFET® ISOMETRIC
M4
Applicable DirectFET® Outline and Substrate Outline
SB
40V
1.3m
1.9m
137A
136nC
M4
L4
L6
L8
Description
The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
Package Type
AUIRF8736M2
DirectFET2 M-CAN
Standard Pack
Form
Quantity
Tape and Reel
Orderable Part Number
AUIRF8736M2TR
4800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
*Qualification
1
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
±20
137
97
27
565
63
2.5
82
254
See Fig. 14, 15, 22a, 22b
Units
V
270
-55 to + 175
mJ
A
W
mJ
A
°C
standards can be found at http://www.irf.com/
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Thermal Resistance
Symbol
RJA
RJA
RJA
RJ-Can
RJ-PCB
Parameter
Typ.
–––
12.5
20
–––
1.0
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
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Units
°C/W
0.42
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
––– 0.03 –––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
1.3
1.9
Static Drain-to-Source On-Resistance
RDS(on)
VGS(th)
Gate Threshold Voltage
2.2
–––
3.9
Gate Threshold Voltage Coefficient
––– -9.3
–––
VGS(th)/TJ
gfs
Forward Transconductance
150
–––
–––
RG
Internal Gate Resistance
––– 0.73 –––
–––
–––
1.0
Drain-to-Source Leakage Current
IDSS
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Qg
Total Gate Charge
–––
136
204
Qgs1
Gate-to-Source Charge
–––
28
–––
Qgs2
Gate-to-Source Charge
–––
10
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
45
–––
Qgodr
Gate Charge Overdrive
–––
53
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
55
–––
Qoss
Output Charge
–––
41
–––
td(on)
Turn-On Delay Time
–––
36
–––
tr
Rise Time
–––
119
–––
td(off)
Turn-Off Delay Time
–––
82
–––
tf
Fall Time
–––
83
–––
Ciss
Input Capacitance
––– 6867 –––
Coss
Output Capacitance
––– 1045 –––
Crss
Reverse Transfer Capacitance
–––
682
–––
Coss eff.
Effective Output Capacitance
––– 1362 –––
2
Max.
60
–––
–––
2.4
–––
W/°C
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 85A
V VDS = VGS, ID = 150µA
mV/°C
S VDS = 10V, ID = 85A
µA
nA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Units
nC
Conditions
VDS = 20V
VGS = 10V
ID = 85A
nC
ns
pF
VDS = 32V, VGS = 0V
VDD = 40V, VGS = 10V
ID = 85A
RG = 6.8
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
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Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
3
Min.
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
46
59
Mounted to a PCB with
small clip heatsink (still air)
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Max. Units
Conditions
137
MOSFET symbol
A
showing the
integral reverse
565
A
p-n junction diode.
1.3
V TJ = 25°C, IS = 85A, VGS = 0V
–––
ns IF = 85A, VDD = 25V
–––
nC dv/dt = 100A/µs
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
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1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
4.5V
100
BOTTOM
4.5V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
0.1
1
10
0.1
100
5.0
ID = 85A
4.0
3.0
T J = 125°C
2.0
T J = 25°C
0.0
4
6
8
10
12
14
16
100
18
2.0
T J = 125°C
1.8
1.6
1.4
T J = 25°C
1.2
1.0
0
20
20
40
VGS, Gate -to -Source Voltage (V)
60
80
100
120
140
ID, Drain Current (A)
Fig. 3 Typical On-Resistance vs. Gate Voltage
Fig. 4 Typical On-Resistance vs. Drain Current
1000
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig. 2 Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
Fig. 1 Typical Output Characteristics
1.0
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
100
T J = -40°C
T J = 25°C
T J = 175°C
10
VDS = 10V
60µs PULSE WIDTH
1.0
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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1.6
ID = 85A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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1000
4.0
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
4.5
3.5
3.0
ID
ID
ID
ID
2.5
= 150µA
= 250µA
= 1.0mA
= 1.0A
2.0
T J = 175°C
100
10
T J = 25°C
1
VGS = 0V
1.5
0.1
-75 -50 -25
0
25 50 75 100 125 150 175
0.2
T J , Temperature ( °C )
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
1.0
1.2
1.4
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
250
Coss = Cds + Cgd
TJ = 25°C
200
150
TJ = 175°C
100
50
10000
VDS = 10V
20µs PULSE WIDTH
0
20
40
60
Ciss
Coss
Crss
1000
100
1
80 100 120 140 160 180
Fig 9. Typical Forward Transconductance vs. Drain Current
10
100
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
140
14.0
ID= 85A
12.0
VDS= 32V
VDS= 20V
VDS= 8.0V
10.0
8.0
6.0
4.0
120
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
0.8
Fig 8. Typical Source-Drain Diode Forward Voltage
0
100
80
60
40
20
2.0
0
0.0
0
20
40
60
80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
0.6
VSD, Source-to-Drain Voltage (V)
C, Capacitance (pF)
GFS , Forward Transconductance (S)
300
0.4
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25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
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400
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
100µsec
1msec
100
10
10msec
1
0.1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
ID
12A
20A
BOTTOM 85A
TOP
300
200
100
0
0.01
0.1
1
10
25
100
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 16. Single Avalanche Event: Pulse Current vs. Pulse Width
6
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EAR , Avalanche Energy (mJ)
100
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 85A
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
7
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Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
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AUIRF8736M2TR
DirectFET® Board Footprint, M4 Outline
(Medium Size Can, 4-Source Pads)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
S
S
S
S
G
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF8736M2TR
DirectFET® Outline Dimension, M4 Outline
(Medium Size Can, 4-Source Pads)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.78 0.82
0.78 0.82
0.78 0.82
0.38 0.42
1.10 1.20
2.30 2.40
3.50 3.60
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MAX
MIN
0.250
0.246
0.189
0.199
0.156
0.152
0.018
0.014
0.024
0.023
0.032
0.031
0.031
0.032
0.031
0.032
0.015
0.017
0.043
0.047
0.094
0.090
0.138
0.142
0.027
0.029
0.003
0.007
0.001
0.003
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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DirectFET® Tape & Reel Dimension (Showing component orientation)
F
E
A
B
C
D
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRF8736M2TR). For 1000 parts on 7"
reel, order AUIRF8736M2TR1
LOADED TAPE FEED DIRECTION
A
H
F
C
D
B
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
G
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.201
0.209
5.10
5.30
0.256
0.264
6.50
6.70
0.059
N.C
1.50
N.C
0.059
0.063
1.50
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF8736M2TR
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Medium Can
MSL1
Class M4 (+/- 800V)
††
AEC-Q101-002
Human Body Model
Class H2 (+/- 4000V)††
AEC-Q101-001
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
Click on this section to link to the appropriate technical
paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain)
of part.
Repetitive rating; pulse width limited by max. junction
temperature.
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Starting TJ = 25°C, L = 0.023mH, RG = 50, IAS = 85A,
Vgs = 10V.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large
heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
R is measured at TJ of approximately 90°C.
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IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
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service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
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Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
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regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will
not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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