AUIRF8739L2TR

AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET    V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead Free, RoHS Compliant and Halogen Free Automotive Qualified *         S SC M2 S S D Applicable DirectFET® Outline and Substrate Outline  SB 40V 0.35m 0.6m 545A 375nC G S S S S S D DirectFET2 L-can L8 M4 L4 L6 L8 Description The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF8739L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Base Part Number Package Type AUIRF8739L2 DirectFET® Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number AUIRF8739L2TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter VDS Drain-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  ID @ TA = 25°C Continuous Drain Current, VGS @ 10V  ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limit) IDM Pulsed Drain Current  PD @TC = 25°C Power Dissipation  PD @TA = 25°C Power Dissipation  EAS Single Pulse Avalanche Energy (Thermally Limited)  EAS (Tested) Single Pulse Avalanche Energy IAR Avalanche Current  EAR Repetitive Avalanche Energy  TP Peak Soldering Temperature TJ Operating Junction and TSTG Storage Temperature Range *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2015 International Rectifier Max. 40 545 385 57 375 1150 340 3.8 312 1500** See Fig. 14, 15, 22a, 22b Units V 270 -55 to + 175 mJ Submit Datasheet Feedback A W mJ A °C June 15, 2022 AUIRF8739L2TR Thermal Resistance Symbol Parameter Junction-to-Ambient  Junction-to-Ambient  Junction-to-Ambient  Junction-to-Can  Junction-to-PCB Mounted Linear Derating Factor  RJA RJA RJA RJ-Can RJ-PCB Typ. ––– 12.5 20 ––– ––– Max. 40 ––– ––– 0.44 0.5 2.3 Units °C/W W/°C Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 5.0mA V(BR)DSS/TJ ––– 0.35 0.60 RDS(on) Static Drain-to-Source On-Resistance m VGS = 10V, ID = 195A  V VGS(th) Gate Threshold Voltage 2.2 ––– 3.9 VDS = VGS, ID = 250µA Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C VGS(th)/TJ gfs Forward Transconductance 250 ––– ––– S VDS = 10V, ID = 195A RG Internal Gate Resistance ––– 0.81 –––  ––– ––– 1.0 VDS = 40V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– 150 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge ––– 375 562 VDS = 20V VGS = 10V Qgs1 Gate-to-Source Charge ––– 60 ––– Qgs2 Gate-to-Source Charge ––– 40 ––– nC ID = 195A Qgd Gate-to-Drain ("Miller") Charge ––– 120 ––– Qgodr Gate Charge Overdrive ––– 155 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 160 ––– Qoss Output Charge ––– 151 ––– nC VDS = 32V, VGS = 0V td(on) Turn-On Delay Time ––– 34 ––– VDD = 20V, VGS = 10V  ID = 195A tr Rise Time ––– 117 ––– ns td(off) Turn-Off Delay Time ––– 120 ––– RG = 1.8 tf Fall Time ––– 95 ––– Ciss Input Capacitance ––– 17890 ––– VGS = 0V VDS = 25V Coss Output Capacitance ––– 2640 ––– pF ƒ = 500 kHz Crss Reverse Transfer Capacitance ––– 1830 ––– Coss eff. Effective Output Capacitance ––– 3785 ––– VGS = 0V, VDS = 0V to 32V 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR Diode Characteristics Symbol Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge  Surface mounted on 1 in. square Cu board (still air). 3 www.irf.com Min. ––– Typ. ––– Max. 545 ––– ––– 1150 ––– ––– ––– ––– 47 66 1.2 ––– ––– Units A A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 195A, VGS = 0V  IF = 195A, VDD = 20V dv/dt = 100A/µs   Mounted to a PCB with small clip heatsink (still air) © 2015 International Rectifier Submit Datasheet Feedback  Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). June 15, 2022 AUIRF8739L2TR Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics Fig. 3 Typical On-Resistance vs. Gate Volt- Fig. 4 Typical On-Resistance vs. Drain Current Fig 5. Transfer Characteristics 4 www.irf.com © 2015 International Rectifier Fig 6. Normalized On-Resistance vs. Temperature Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR Fig. 7 Typical Threshold Voltage vs. Junction Temperature Fig 9. Typical Forward Transconductance vs. Drain Cur- Fig 11. Typical Gate Charge vs. Gate-to-Source Voltage 5 www.irf.com © 2015 International Rectifier Fig 8. Typical Source-Drain Diode Forward Voltage Fig 10. Typical Capacitance vs. Drain-to-Source Volt- Fig 12. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Temperature Fig 15. Maximum Effective Transient Thermal Impedance, Junction -to-Case Fig 16. Typical Avalanche Current vs. Pulse Width 6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 15) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 17. Fig 18a. Unclamped Inductive Test Circuit Fig VDD Fig 19a. Gate Charge Test Circuit Fig 20a. Switching Time Test Circuit 7 www.irf.com © 2015 International Rectifier Fig 19b. Gate Charge Waveform Fig 20b. Switching Time Waveforms Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR DirectFET® Board Footprint, L8 Outline (Large Size Can, 8-Source Pads) Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D D S S S S S S S S G D D D Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR DirectFET® Outline Dimension, L8 Outline (Large Size Can, 8-Source Pads)Dimension, DirectFET™ Outline L8 Outline (Large Size Can, 8-Source Pads) Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all Please see AN-1035 for DirectFET assembly details, stencil and substrate design recommendations recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J K L L1 M P R METRIC MIN MAX 9.05 9.15 6.85 7.10 5.90 6.00 0.55 0.65 0.58 0.62 1.18 1.22 0.98 1.02 0.73 0.77 0.38 0.42 1.35 1.45 2.55 2.65 5.45 5.35 0.68 0.74 0.09 0.17 0.02 0.08 IMPERIAL MIN MAX 0.356 0.360 0.270 0.280 0.232 0.236 0.022 0.026 0.023 0.024 0.046 0.048 0.039 0.040 0.029 0.030 0.015 0.017 0.053 0.057 0.100 0.104 0.211 0.215 0.027 0.029 0.003 0.007 0.001 0.003 Dimensions are shown in millimeters (inches) DirectFET® Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR DirectFET® Tape & Reel Dimension (Showing component orientation) NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts, ordered as AUIRF8739L2TR. REEL DIMENSIONS STANDARD OPTION (QTY 4000) IMPERIAL METRIC MIN CODE MAX MIN MAX 12.992 A N.C 330.00 N.C 0.795 B 20.20 N.C N.C 0.504 C 12.80 0.520 13.20 0.059 D 1.50 N.C N.C E 3.900 99.00 100.00 3.940 F N.C N.C 0.880 22.40 G 0.650 16.40 0.720 18.40 H 0.630 15.90 0.760 19.40 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 4.69 0.476 11.90 12.10 0.154 0.161 3.90 4.10 0.623 0.642 15.90 16.30 0.291 0.299 7.40 7.60 0.283 0.291 7.20 7.40 0.390 0.398 9.90 10.10 0.059 N.C 1.50 N.C 0.059 1.50 0.063 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR Qualification Information† Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model DirectFET2 L-CAN MSL1 Class M4 (+/- 800V) †† AEC-Q101-002 ESD Human Body Model Class H2 (+/- 4000V)†† AEC-Q101-001 RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Highest passing voltage. Revision History Date Rev. 02/17/2015 2.0 06/15/2022 2.1 Comments  Final data sheet  Update Fig.13_SOA curve  Corrected typo on Absolute Maximum Ratings Table from ”VGS” to “VDS” on page 1  Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET ® Website.  Surface mounted on 1 in. square Cu board, steady state.  TC measured with thermocouple mounted to top (Drain) of part.  Repetitive rating; pulse width limited by max. junction temperature. 11 www.irf.com © 2015 International Rectifier  Starting TJ = 25°C, L = 0.016mH, RG = 50, IAS = 195A, Vgs = 20V.  Pulse width  400µs; duty cycle  2%.  Used double sided cooling, mounting pad with large heatsink.  Mounted on minimum footprint full size board with metalized back and with small clip heatsink.  R is measured at TJ of approximately 90°C. ** Starting TJ = 25°C, L = 0.1mH, RG = 50, IAS = 288A, Vgs = 20V Submit Datasheet Feedback June 15, 2022 AUIRF8739L2TR IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 12 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 15, 2022