PD - 97626
AUTOMOTIVE GRADE
AUIRF9540N
Features
l
l
l
l
l
l
l
l
Advanced Planar Technology
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
V(BR)DSS
D
-100V
RDS(on) max.
G
0.117Ω
ID
S
-23A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF9540N
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
-23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-16
Pulsed Drain Current
-76
IDM
c
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
d
Units
A
140
0.91
± 20
W
W/°C
V
mJ
EAS
Single Pulse Avalanche Energy (Thermally Limited)
430
IAR
Avalanche Current
-11
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
14
-5.0
-55 to + 175
mJ
V/ns
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
c
c
e
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Typ.
Max.
–––
1.1
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
RθJC
Junction-to-Case
RθCS
RθJA
g
Parameter
y
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
06/07/11
AUIRF9540N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-100
–––
–––
-2.0
5.3
–––
–––
–––
–––
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.117
-4.0
–––
-25
-250
100
-100
V
V/°C
Ω
V
S
μA
nA
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -11A
VDS = VGS, ID = -250μA
VDS = -50V, ID = -11A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
67
51
51
4.5
97
15
51
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = -11A
VDS = -80V
VGS = -10V, See Fig. 6 & 13
VDD = -50V
ID = -11A
RG = 5.1Ω
RD = 4.2Ω, See Fig. 10
Between lead,
f
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
400
240
–––
–––
–––
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
pF
f
D
G
S
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Min. Typ. Max. Units
–––
–––
A
–––
–––
–––
–––
–––
–––
150
830
-76
-1.6
220
1200
Conditions
MOSFET symbol
-23
V
ns
nC
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = -11A, VGS = 0V
TJ = 25°C, IF = -11A
di/dt = 100A/μs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 7.1mH, RG = 25Ω, IAS = -11A. (See Figure 12)
ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
2
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AUIRF9540N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M4 (+/- 500V)
AEC-Q101-002
†††
†††
Human Body Model
Class H1 (+/- 2000V)
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 2000V)
AEC-Q101-005
RoHS Compliant
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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AUIRF9540N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF9540N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF9540N
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF9540N
TO-220
Form
Tube
10
Complete Part Number
Quantity
50
AUIRF9540N
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AUIRF9540N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the AU
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products
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designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications,
IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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