AUIRF9Z34N

PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* D G S V(BR)DSS -55V RDS(on) max. 0.10Ω ID -19A D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF9Z34N G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Max. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -19 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -14 Pulsed Drain Current -68 IDM c PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS d Units A 68 0.45 ± 20 W W/°C V EAS Single Pulse Avalanche Energy (Thermally Limited) 180 mJ IAR Avalanche Current -10 A 6.8 -5.0 -55 to + 175 mJ V/ns EAR dv/dt TJ TSTG c Repetitive Avalanche Energy c Peak Diode Recovery dv/dt e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw °C 300 10 lbf in (1.1N m) y Thermal Resistance Typ. Max. ––– 2.2 Case-to-Sink, Flat, Greased Surface 0.50 ––– Junction-to-Ambient ––– 62 RθJC Junction-to-Case RθCS RθJA g Parameter y Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 06/21/11 AUIRF9Z34N Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units -55 ––– ––– -2.0 4.2 ––– ––– ––– ––– ––– 0.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.10 -4.0 ––– -25 -250 100 -100 V V/°C Ω V S μA nA Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -10V, ID = -10A VDS = VGS, ID = -250μA VDS = -25V, ID = -10A VDS = -55V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 55 30 41 4.5 35 79 16 ––– ––– ––– ––– ––– LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 620 280 140 ––– ––– ––– and center of die contact VGS = 0V VDS = -25V ƒ = 1.0MHz, See Fig. 5 nC ns nH pF ID = -10A VDS = -44V VGS = -10V, See Fig. 6 & 13 VDD = -28V ID = -10A RG = 13Ω RD = 2.6Ω, See Fig. 10 Between lead, f f D G S Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– -19 ISM (Body Diode) Pulsed Source Current ––– ––– -68 showing the integral reverse VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time -1.6 82 160 S p-n junction diode. TJ = 25°C, IS = -10A, VGS = 0V TJ = 25°C, IF = -10A di/dt = 100A/μs c MOSFET symbol A ––– ––– ––– ––– 54 110 V ns nC G f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 3.6mH, RG = 25Ω, IAS = -10A. (See Figure 12) ƒ ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Rθ is measured at TJ approximately 90°C. D AUIRF9Z34N Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 N/A Class M3 (+/- 250V)††† AEC-Q101-002 Human Body Model Class H1B (+/- 800V)††† AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V)††† AEC-Q101-005 RoHS Compliant † †† Yes Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage AUIRF9Z34N 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 10 -4.5V 20μs PULSE WIDTH Tc = 25°C A 1 0.1 1 10 10 -4.5V 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25°C TJ = 175°C 10 VDS = -25V 20μs PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 A 100 Fig 2. Typical Output Characteristics 100 5 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20μs PULSE WIDTH TC = 175°C 1 0.1 100 -VDS , Drain-to-Source Voltage (V) 4 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP TOP 10 A I D = -17A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature AUIRF9Z34N 1200 800 Ciss 600 Coss -VGS , Gate-to-Source Voltage (V) 1000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 400 Crss 200 0 1 10 100 A I D = -10A VDS = -44V VDS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 -VDS , Drain-to-Source Voltage (V) 20 30 40 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) -ISD , Reverse Drain Current (A) 10 10 TJ = 175°C TJ = 25°C 1 100 10μs 100μs 10 1ms VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.6 TC = 25°C TJ = 175°C Single Pulse 1 1 10ms 10 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area A 100 AUIRF9Z34N RD V DS 20 VGS D.U.T. RG - + ID , Drain Current (A) 15 VDD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 0 td(on) 25 50 75 100 125 150 tr t d(off) tf VGS 175 10% TC , Case Temperature ( °C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.1 AUIRF9Z34N D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) L VDS 500 TOP BOTTOM 400 ID -4.2A -7.2A -10A 300 200 100 A 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -10V QG QGS 50KΩ 12V .2μF .3μF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 175 AUIRF9Z34N Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ +  RG V GS * + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD [ ] Forward Drop Inductor Curent Ripple ≤ 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ ISD ] ] *** AUIRF9Z34N TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF9Z34N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ AUIRF9Z34N Ordering Information Base part number Package Type Standard Pack AUIRF9Z34N TO-220 Form Tube Complete Part Number Quantity 50 AUIRF9Z34N AUIRF9Z34N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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