PD - 97598
AUTOMOTIVE GRADE
AUIRFB4410
HEXFET® Power MOSFET
Features
●
●
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
100V
8.0mΩ
10mΩ
88A
75A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
S
D
G
TO-220AB
AUIRFB4410
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
Parameter
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
f
dv/dt
TJ
TSTG
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
e
g
Max.
Units
88
63
75
380
200
1.3
± 20
19
-55 to + 175
A
c
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
W
W/°C
V
V/ns
°C
300
x
x
10lb in (1.1N m)
220
See Fig. 14, 15, 16a, 16b
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
j
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
0.61
–––
°C/W
–––
62
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/23/2010
AUIRFB4410
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
–––
2.0
120
–––
–––
–––
–––
–––
––– –––
0.094 –––
8.0
10
–––
4.0
––– –––
1.5
–––
–––
20
––– 250
––– 200
––– -200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 58A
V VDS = VGS, ID = 150µA
S VDS = 50V, ID = 58A
Ω f = 1MHz, open drain
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
d
g
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
Min. Typ. Max. Units
d
h
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
31
44
24
80
55
50
5150
360
190
420
500
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
pF
Min. Typ. Max. Units
Conditions
ID = 58A
VDS = 80V
VGS = 10V
VDD = 65V
ID = 58A
RG = 4.1Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
VGS = 0V, VDS = 0V to 80V
g
g
i, See Fig.11
h, See Fig. 5
Conditions
–––
–––
88
c
A
MOSFET symbol
–––
–––
380
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 58A, VGS = 0V
VR = 85V,
TJ = 25°C
TJ = 125°C
IF = 58A
di/dt = 100A/µs
TJ = 25°C
S
g
––– –––
1.3
V
–––
38
56
ns
–––
51
77
–––
61
92
nC
TJ = 125°C
––– 110 170
–––
2.8
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
Notes:
Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
as Coss while VDS is rising from 0 to 80% VDSS .
Repetitive rating; pulse width limited by max. junction
Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature.
Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax, starting TJ = 25°C, L = 0.14mH
Rθ is measured at TJ approximately 90°C.
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 58A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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AUIRFB4410
Qualification Information
†
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
Machine Model
TO-220AB
N/A
Class M4 (425V)
AEC-Q101-002
ESD
Human Body Model
Class H1C (2000V)
AEC-Q101-001
Charged Device Model
Class C5 (1125V)
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFB4410
1000
1000
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
10
1
4.5V
100
BOTTOM
4.5V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
0.1
1
10
1
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
100
1000
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
10
Fig 2. Typical Output Characteristics
1000
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
ID = 58A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
2
3
4
5
6
7
8
9
10
-60 -40 -20 0
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 58A
C oss = C ds + C gd
10000
Ciss
1000
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Coss
Crss
100
VDS= 80V
VDS= 50V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFB4410
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
100
T J = 175°C
T J = 25°C
10
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
Limited By Package
ID, Drain Current (A)
75
50
25
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
100
50
100
1000
130
125
120
115
110
105
100
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
EAS , Single Pulse Avalanche Energy (mJ)
900
1.5
Energy (µJ)
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
25
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
1.0
0.5
0.0
ID
6.7A
9.7A
BOTTOM 58A
800
TOP
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFB4410
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
τJ
τJ
τ1
R2
R2
τC
τ2
τ1
τ
Ri (°C/W) τi (sec)
0.2736 0.000376
0.3376
τ2
0.004143
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
100
Duty Cycle = Single Pulse
0.01
10
1
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
250
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 58A
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
6
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFB4410
20
5.0
VGS(th) Gate threshold Voltage (V)
4.5
15
4.0
IRRM (A)
3.5
3.0
2.5
2.0
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
10
IF = 19A
VR = 85V
5
T = 25°C _____
J
T = 125°C ---------J
1.5
1.0
-75 -50 -25
0
25
50
0
75 100 125 150 175 200
100 200 300 400 500 600 700 800 900 1000
T J , Temperature ( °C )
dif/dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
400
20
350
300
15
Qrr (nC)
IRRM (A)
250
10
200
150
IF = 38A
V = 85V
R
T = 25°C _____
J
TJ = 125°C ----------
5
IF = 19A
VR = 85V
100
T = 25°C _____
J
T = 125°C ---------J
50
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
dif/dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
400
350
300
Qrr (nC)
250
200
150
I = 38A
F
V = 85V
R
TJ = 25°C _____
100
50
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFB4410
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 21a. Unclamped Inductive Test Circuit
LD
Fig 21b. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
Fig 22a. Switching Time Test Circuit
tr
td(off)
tf
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
8
Fig 23a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 23b. Gate Charge Waveform
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AUIRFB4410
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB4410
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFB4410
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRFB4410
TO-220
Form
Tube
10
Complete Part Number
Quantity
50
AUIRFB4410
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AUIRFB4410
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements
with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied
at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using
IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating
safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all
associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business
practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express
and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable
for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with
such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
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acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated
by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that,
if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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11
