AUIRFL024NTR

AUIRFL024N AUTOMOTIVE GRADE HEXFET® Power MOSFET Features • • • • • • • • • D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS 55V RDS(on) max. G S 75mΩ ID 2.8A D S D Description G Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRFL024N SOT-223 SOT-223 AUIRFL024N G D S Gate Drain Source Standard Pack Form Quantity Tube 95 Tape and Reel Orderable Part Number AUIRFL024N 2500 AUIRFL024NTR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TA = 25°C h Continuous Drain Current, VGS @ 10V g ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Pulsed Drain Current IDM Max. Continuous Drain Current, VGS @ 10V c Units 4.0 2.8 g 2.3 A 11.2 Power Dissipation (PCB Mount) 2.1 PD @TA = 25°C h Power Dissipation (PCB Mount) g VGS Linear Derating Factor (PCB Mount) Gate-to-Source Voltage 1.0 8.3 ± 20 mW/°C V EAS Single Pulse Avalanche Energy (Thermally Limited) 214 mJ IAR Avalanche Current 2.8 A EAR dv/dt TJ Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and 0.1 5.0 -55 to + 150 mJ V/ns TSTG Storage Temperature Range PD @TA = 25°C c g d cg e W °C Thermal Resistance Parameter RθJA Junction-to-Ambient (PCB mount, steady state) RθJA Junction-to-Ambient (PCB mount, steady state) g h Typ. Max. Units 90 120 °C/W 50 60 HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 AUIRFL024N Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 ––– ––– 2.0 3.0 ––– ––– ––– ––– ––– 0.056 ––– ––– ––– ––– ––– ––– ––– ––– ––– 75 4.0 ––– 25 250 100 -100 V V/°C mΩ V S μA nA Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.8A VDS = VGS, ID = 250μA VDS = 25V, ID = 1.6A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 8.1 13.4 22.2 17.7 400 145 60 18.3 3.0 7.7 ––– ––– ––– ––– ––– ––– ––– nC ns Conditions ID = 1.68A VDS = 28V VGS = 10V, See Fig. 6 and 9 VDD = 28V ID = 1.68A RG = 24 Ω RD = 17Ω, See Fig. 10 VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 f f pF Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 2.8 ISM (Body Diode) Pulsed Source Current ––– ––– 11.2 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ––– ––– ––– ––– 35 50 1.0 53 75 c Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) ‚ VDD = 25V, starting TJ = 25°C, L = 54.7mH RG = 25Ω, IAS = 2.8A. (See Figure 12) ƒ ISD ≤ 1.68A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C . 2 www.irf.com © 2014 International Rectifier Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25°C, IS = 1.68A, VGS = 0V TJ = 25°C, IF = 1.68A di/dt = 100A/μs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … When mounted on FR-4 board using minimum recommended footprint. † When mounted on 1 inch square copper board, for comparison with other SMD devices. Submit Datasheet Feedback March 26, 2014 AUIRFL024N 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 4.5V 1 20μs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 4.5V 1 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C TJ = 25 ° C V DS = 25V 20μs PULSE WIDTH 5.0 5.5 6.0 Fig 3. Typical Transfer Characteristics 3 www.irf.com © 2014 International Rectifier 10 100 Fig 2. Typical Output Characteristics, 100 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, 1 4.5 20μs PULSE WIDTH TJ = 150 °C 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 6.5 ID = 2.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback March 26, 2014 AUIRFL024N C, Capacitance (pF) 600 Ciss 500 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) 700 Coss 400 300 200 Crss 100 0 1 10 ID = 1.68 A 15 10 5 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 5 10 15 20 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) VDS = 44V VDS = 27V 10 1 TJ = 150 ° C TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com © 2014 International Rectifier 1.2 10 100us 1ms 1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback March 26, 2014 1000 AUIRFL024N QG 10V VGS QGS RD V DS QGD D.U.T. RG + - VDD VG 10V Charge Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 90% 50KΩ .2μF 12V .3μF D.U.T. + V - DS 10% VGS VGS td(on) 3mA IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1000 100 D = 0.50 0.20 0.10 10 0.05 P DM 0.02 0.01 t1 1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.1 1 10 100 1000 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 AUIRFL024N 15V L VDS D.U.T RG IAS 10V tp DRIVER + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 500 TOP 400 BOTTOM ID 1.3A 2.2A 2.8A 300 200 100 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 150 AUIRFL024N SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information FL024N Date Code Y= Year WW= Work Week A= Automotive, Lead Free Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 AUIRFL024N SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2.05 (.080) 1.95 (.077) TR 4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065) 7.55 (.297) 7.45 (.294) 16.30 (.641) 15.70 (.619) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 2.30 (.090) 2.10 (.083) 7.10 (.279) 6.90 (.272) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 50.00 (1.969) MIN. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 AUIRFL024N Qualification Information† Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model ESD †† SOT-223 MSL1 Class M2 (+/- 150V)††† AEC-Q101-002 Human Body Model Class H1A (+/- 350V)††† AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V) AEC-Q101-005 RoHS Compliant ††† Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage. 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 AUIRFL024N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014 AUIRFL024N Revision History Date 3/26/2014 11 Comments • Updated part marking on page 7 • Updated data sheet with new IR corporate template www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 26, 2014