AUIRFN7107TR

AUTOMOTIVE GRADE   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * HEXFET® POWER MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Package Type AUIRFN7107 PQFN 5mm x 6mm VDSS 75V RDS(on) max (@VGS = 10V) 8.5m QG (typical) 51nC ID (@TC (Bottom) = 25°C) 75A   PQFN 5X6 mm Applications  Injection  Heavy Loads  DC-DC Converter Base Part Number AUIRFN7107 G D S Gate Drain Source Standard Pack Form Quantity Tape and Reel 4000 Complete Part Number AUIRFN7107TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. VDS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C VGS EAS IAR TJ TSTG Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Operating Junction and Storage Temperature Range Max. 75 14 12 75 53 300 4.4 125 0.029 ± 20 123 45 -55 to + 175 Units V A W W/°C V mJ A °C   HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12   AUIRFN7107 Thermal Resistance Symbol Parameter RJC (Bottom) Junction-to-Case  Typ. ––– RJC (Top) Junction-to-Case  ––– 27 RJA Junction-to-Ambient  ––– 34 RJA (