AUIRFN8403TR

AUTOMOTIVE GRADE   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * HEXFET® POWER MOSFET VDSS Package Type   AUIRFN8403 PQFN 5mm x 6mm 2.5m max Applications  Electric Power Steering (EPS)  Battery Switch  Start/Stop Micro Hybrid  Heavy Loads  DC-DC Converter Base Part Number 40V RDS(on) typ. Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.   AUIRFN8403 ID (Silicon Limited) 3.3m 123A ID (Package Limited) 95A   PQFN 5X6 mm G D S Gate Drain Source Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number   AUIRFN8403TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. VGS EAS EAS (Tested) IAR Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy  Avalanche Current  EAR Repetitive Avalanche Energy  TJ TSTG Operating Junction and Storage Temperature Range ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Max. 123 87 95 492 4.3 94 0.029 ± 20 100 159 See Fig. 14, 15, 22a, 22b -55 to + 175 Units A W W/°C V mJ A °C   HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 1, 2015 AUIRFN8403   Thermal Resistance Symbol Junction-to-Case  RJC (Bottom) Junction-to-Case  RJC (Top) Junction-to-Ambient  RJA Junction-to-Ambient  RJA (