AUIRFN8458TR

AUTOMOTIVE GRADE   AUIRFN8458 Features  Advanced Process Technology  Dual N-Channel MOSFET  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) typ. max 40V 8.0m 10m ID 43A (@TC (Bottom) = 25°C   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.   DUAL PQFN 5X6 mm G D S Gate Drain Source Applications  12V Automotive Systems  Low Power Brushed Motor  Braking Base Part Number   Package Type   AUIRFN8458 Dual PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number   AUIRFN8458TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C IDM Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Max. 43 30 180 PD @TC (Bottom) = 25°C Power Dissipation VGS EAS EAS (Tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Units A 34 W 0.23 ± 20 35 37 See Fig. 14, 15, 22a, 22b W/°C V mJ -55 to + 175 A °C   HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 17, 2014 AUIRFN8458   Thermal Resistance Symbol RJC (Bottom) Junction-to-Case  Parameter Typ. ––– Max. 4.4 RJC (Top) Junction-to-Case  ––– 50 RJA Junction-to-Ambient  ––– 105 RJA (