AUTOMOTIVE GRADE
AUIRFP2602
Features
• Advanced Process Technology
• Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
Base part number
Package Type
AUIRFP2602
TO-247AC
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
24V
1.25mΩ
1.6mΩ
380A
180A
G
D
S
TO-247AC
AUIRFP2602
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
25
S
Source
Orderable Part Number
AUIRFP2602
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
380
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
270
180
1580
380
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
2.5
± 20
400
1011
See Fig.14,15, 17a, 17b
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
A
W
-55 to + 175
W/°C
V
mJ
A
mJ
°C
300
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.24
–––
0.40
–––
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFP2602
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
24
–––
–––
2.0
230
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
0.02 ––– V/°C Reference to 25°C, ID = 1mA
1.25 1.6 mΩ VGS = 10V, ID = 180A
––– 4.0
V VDS = VGS, ID = 250µA
––– –––
S VDS = 10V, ID = 180A
–––
20
VDS =24 V, VGS = 0V
µA
––– 250
VDS =24V,VGS = 0V,TJ =125°C
––– 200
VGS = 20V
nA
––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
––– 260 390
Gate-to-Source Charge
–––
72
–––
Qgs
Qgd
Gate-to-Drain Charge
––– 100 –––
td(on)
Turn-On Delay Time
–––
70
–––
Rise Time
––– 490 –––
tr
td(off)
Turn-Off Delay Time
––– 150 –––
Fall Time
––– 270 –––
tf
LD
Internal Drain Inductance
–––
5.0
–––
LS
Internal Source Inductance
–––
13
–––
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– 11220 –––
––– 4800 –––
––– 2660 –––
––– 13020 –––
4800
––– 6710 –––
ID = 180A
nC VDS = 12V
VGS = 10V
VDD = 12V
ID = 180A
ns
RG= 2.5Ω
VGS = 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
pF VDS = 19V
ƒ = 1.0KHz
VGS=0V, VDS=1.0V ,ƒ = 1.0KHz
VGS=0V, VDS=19V ,ƒ = 1.0KHz
VGS = 0V, VDS = 0V to 19V
Min.
Typ. Max. Units
–––
––– 380
–––
–––
1580
–––
–––
–––
–––
55
56
1.3
83
84
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 180A,VGS = 0V
V
ns TJ = 25°C ,IF = 180A, VDD =12V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.025mH, RG = 25Ω, IAS = 180A, VGS =10V. Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 180A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
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AUIRFP2602
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
4.5V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
1
0.1
1
0.1
10
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
300
TJ = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
1000
T J = 175°C
100
T J = 25°C
10
VDS = 10V
≤60µs PULSE WIDTH
250
200
TJ = 175°C
150
100
50
VDS = 10V
380µs PULSE WIDTH
0
1.0
2
3
4
5
6
7
8
0
9
40
80
120
160
200
ID, Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
Fig. 4 Typical Forward Transconductance vs. Drain Current
Fig. 3 Typical Transfer Characteristics
1.8
T J = 175°C
100
T J = 25°C
10
1
VGS = 0V
1.6
ID = 180A
VGS = 10V
1.4
(Normalized)
R DS(on) , Drain-to-Source On Resistance
1000
ISD, Reverse Drain Current (A)
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
1.2
1.0
0.8
0.6
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Fig 5. Typical Source-Drain Diode Forward Voltage
3
1
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRFP2602
100000
12.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
ID= 180A
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Crss = Cgd
Coss = Cds + Cgd
C iss
Coss
10000
C rss
10.0
VDS = 19V
VDS = 12V
8.0
6.0
4.0
2.0
0.0
1000
1
10
0
100
50
Fig. 7 Typical Capacitance vs. Drain-to-Source Voltage
150
200
250
300
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
10000
400
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
350
1msec
100
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
Limited By Package
300
100µsec
ID, Drain Current (A)
ID, Drain-to-Source Current (A)
100
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
250
200
150
100
DC
50
1
0
1
10
100
25
50
VDS , Drain-to-Source Voltage (V)
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current vs. Case Temperature
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
τJ
0.05
0.01
0.001
1E-006
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ1
τ2
τ2
τ3
Ci= τi/Ri
Ci= τi/Ri
0.0001
τ3
τ4
τ4
τC
Ri (°C/W)
τI (sec)
0.0224
0.00002
0.0641
0.000095
0.1778
0.00169
0.1362
0.013883
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
R4
R4
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5.0
ID
TOP
54A
95A
BOTTOM 180A
1400
1200
VGS(th) , Gate Threshold Voltage (V)
EAS , Single Pulse Avalanche Energy (mJ)
1600
1000
800
600
400
200
4.0
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.0
0
25
50
75
100
125
150
-75 -50 -25
175
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 13. Threshold Voltage vs. Temperature
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
400
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 180A
EAR , Avalanche Energy (mJ)
350
300
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Iav = 2∆T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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AUIRFP2602
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01Ω
I AS
Fig 17a. Unclamped Inductive Test Circuit
Fig 17b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1 Qgs2
Fig 18a. Gate Charge Test Circuit
Fig 19a. Switching Time Test Circuit
6
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
Fig 19b. Switching Time Waveforms
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AUIRFP2602
TO-247AC Package Outline (Dimensions are
TO-247AC Part Marking Information
Part Number
AUIRFP2602
Date Code
YWWA
IR Logo
XX
•
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFP2602
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
TO-247AC
N/A
Class M4 (+/- 800V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
2/16/2016
Comments
•
•
Updated datasheet with corporate template
Corrected typo, Capacitance test condition from VDS=25V to VDS=19V on page 2
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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