PD -97692A
AUTOMOTIVE GRADE
AUIRFP2907
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allow ed
up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
D
G
S
V(BR)DSS
75V
RDS(on) typ.
max
ID (Silicon Limited)
3.6mΩ
4.5mΩ
209A
ID (Package Limited)
90A
h
D
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
G
D
S
TO-247AC
AUIRFP2907
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
h
148h
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
209
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
A
90
c
840
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
470
3.1
± 20
W
W/°C
V
1970
mJ
See Fig. 12a, 12b, 15, 16
A
IDM
Pulsed Drain Current
d
EAS
Single Pulse Avalanche Energy (Thermally Limited)
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
TJ
TSTG
c
c
e
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
y
Typ.
Max.
–––
0.32
Case-to-Sink, Flat, Greased Surface
0.24
–––
Junction-to-Ambient
–––
40
RθJC
Junction-to-Case
RθCS
RθJA
j
Parameter
mJ
V/ns
5.0
-55 to + 175
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/11/11
AUIRFP2907
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75
–––
–––
2.0
130
–––
–––
–––
–––
–––
0.085
3.6
–––
–––
–––
–––
–––
–––
–––
–––
4.5
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 125A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 125A
μA VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
nA VGS = 20V
VGS = -20V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Min. Typ. Max. Units
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
410
92
140
23
190
130
130
5.0
620
140
210
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = 125A
VDS = 60V
VGS = 10V
VDD = 38V
ID = 125A
RG = 1.2Ω
VGS = 10V
Between lead,
f
f
D
LS
Internal Source Inductance
–––
13
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
13000
2100
500
9780
1360
2320
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
g
pF
G
Diode Characteristics
Parameter
Min. Typ. Max. Units
h
IS
Continuous Source Current
–––
–––
ISM
(Body Diode)
Pulsed Source Current
–––
–––
840
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
140
880
1.3
210
1320
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.25mH
RG = 25Ω, IAS = 125A. (See Figure 12).
ISD ≤ 125A, di/dt ≤ 260A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
Conditions
MOSFET symbol
209
A
V
ns
nC
D
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 125A, VGS = 0V
TJ = 25°C, IF = 125A
di/dt = 100A/μs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Rθ is measured at TJ of approximately 90°C.
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AUIRFP2907
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-247
MSL1
Class M4 (+/- 425V)
AEC-Q101-002
†††
Class H3A (+/- 8000V)
AEC-Q101-001
Class C5 (+/- 1125V)
AEC-Q101-005
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFP2907
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
4.5V
20μs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
4.5V
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 175 ° C
100
TJ = 25 ° C
10
V DS = 25V
20μs PULSE WIDTH
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
5.0
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
4.0
20μs PULSE WIDTH
TJ = 175 ° C
10.0
ID = 209A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRFP2907
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
16000
Coss = Cds + Cgd
Ciss
12000
8000
4000
Coss
Crss
0
1
10
20
VGS , Gate-to-Source Voltage (V)
20000
100
12
8
4
0
0
100
200
300
400
500
600
700
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
ID, Drain-to-Source Current (A)
1000
ISD , Reverse Drain Current (A)
FOR TEST CIRCUIT
SEE FIGURE 13
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.0
VDS = 60V
VDS = 37V
16
VDS, Drain-to-Source Voltage (V)
100
ID = 125A
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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3.0
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
1000
100
100μsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
0.1
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFP2907
240
LIMITED BY PACKAGE
VGS
200
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-VDD
160
10V
120
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
80
Fig 10a. Switching Time Test Circuit
40
0
VDS
25
50
75
100
125
150
TC , Case Temperature ( ° C)
175
90%
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFP2907
15V
DRIVER
L
VDS
ID
51A
88A
BOTTOM 125A
TOP
4000
D.U.T
RG
+
V
- DD
IAS
20V
EAS , Single Pulse Avalanche Energy (mJ)
5000
0.01Ω
tp
A
3000
2000
Fig 12a. Unclamped Inductive Test Circuit
1000
V(BR)DSS
tp
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
4.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
D.U.T.
+
V
- DS
VGS
VGS(th) , Variace ( V )
3.5
3.0
ID = 250μA
2.5
2.0
1.5
1.0
3mA
-75 -50 -25
IG
ID
Current Sampling Resistors
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFP2907
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
0.01
100
0.05
0.10
10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
2000
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 125A
1600
1200
800
400
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRFP2907
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
+
-
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS
*
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[ VGS=10V] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[
Re-Applied
Voltage
Body Diode
VDD
]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[
ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
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9
AUIRFP2907
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUFP2907
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFP2907
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRFP2907
TO-247
Form
Tube
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Complete Part Number
Quantity
25
AUIRFP2907
11
AUIRFP2907
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes
to its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the AU prefix follow automotive industry and / or customer specific requirements with
regards to product discontinuance and process change notification. All products are sold subject to IRs terms
and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
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12
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