AUTOMOTIVE GRADE
AUIRFP4110
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Package Type
AUIRFP4110
TO-247AC
100V
3.7m
4.5m
180A
max
G
ID (Silicon Limited)
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
VDSS
RDS(on) typ.
D
ID
120A
(Package Limited)
G
D
S
TO-247AC
AUIRFP4110
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
AUIRFP4110
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
180
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
130
ID @ TC = 25°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
120
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
670
370
2.5
± 20
190
108
37
5.3
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
-55 to + 175
300
10 lbf·in (1.1 N·m)
°C
Thermal Resistance
RJC
RCS
RJA
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.402
–––
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFP4110
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
Typ. Max. Units
100
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.7
4.5
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Trans conductance
Drain-to-Source Leakage Current
–––
–––
–––
20
S
IDSS
160
–––
VDS = 50V, ID = 75A
VDS =100 V, VGS = 0V
–––
–––
250
–––
–––
–––
–––
–––
1.3
100
-100
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
0.108 –––
V/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 75A
µA
nA
VDS =100V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
150
35
43
25
67
210
–––
–––
–––
–––
td(off)
Turn-Off Delay Time
–––
78
–––
tf
Ciss
Coss
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
88
9620
670
–––
–––
–––
Crss
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
250
–––
–––
820
–––
VGS = 0V, VDS = 0V to 80V
–––
950
–––
VGS = 0V, VDS = 0V to 80V
Min.
Typ. Max. Units
–––
––– 180
Coss eff.(ER)
Coss eff.(TR)
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ID = 75A
nC VDS = 50V
VGS = 10V
VDD = 65V
ID = 75A
ns
RG= 2.6
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
A
–––
–––
670
–––
–––
1.3
–––
–––
–––
–––
–––
50
60
94
140
3.5
75
90
140
210
–––
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
TJ = 25°C,IS = 75A,VGS = 0V
TJ = 25°C
VDD = 85V
TJ = 125°C
IF = 75A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
ns
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH, RG = 25, IAS = 108A, VGS =10V. Part not recommended for use above
this value.
ISD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
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AUIRFP4110
1000
1000
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
BOTTOM
100
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
10
0.1
1
10
0.1
100
1000
100
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
T J = 25°C
10
T J = 175°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
ID = 75A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
7
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS, Gate-to-Source Voltage (V)
ID= 75A
Ciss
10000
Fig 4. Normalized On-Resistance vs. Temperature
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Coss
1000
Crss
100
10.0
VDS = 80V
VDS = 50V
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
4.5V
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2017-09-15
AUIRFP4110
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
0
2.0
180
Limited By Package
ID, Drain Current (A)
140
120
100
80
60
40
20
0
25
50
75
100
125
150
100
1000
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
175
T J , Temperature ( °C )
TC , Case Temperature (°C)
Fig 10. Drain-to–Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
800
EAS , Single Pulse Avalanche Energy (mJ)
5.0
4.5
4.0
3.5
Energy (µJ)
10
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
160
1
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID
TOP
17A
27A
BOTTOM 108A
700
600
500
400
300
200
100
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Coss Stored Energy
4
1msec
DC
120
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12. Threshold Voltage vs. Temperature
2017-09-15
AUIRFP4110
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
J
0.001
1E-005
R2
R2
R3
R
3
C
2
1
3
2
3
C i= i R i
C i= i R i
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
R1
R1
J
1
C
R i (°C /W )
0 .0 9 8 7 6 2 5 1
0 .2 0 6 6 6 9 7
0 .0 9 5 1 0 4 6 4
i (s e c )
0 .0 0 0 1 1 1
0 .0 0 1 7 4 3
0 .0 1 2 2 6 9
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
250
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a,22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not exceed Tjmax
(assumed as 25°C in figure 14 , 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC (D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 108A
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ Z thJC
I av = 2T/ [1.3·BV·Z th ]
E AS (AR) = PD (ave) ·t av
Fig 15. Maximum Avalanche Energy vs. Temperature
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AUIRFP4110
25
20
TJ = 25°C
TJ = 125°C
3.0
2.5
ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
1.5
15
10
5
1.0
0.5
0
-75 -50 -25 0
25 50 75 100 125 150 175 200
0
T J , Temperature ( °C )
200
400
600
800
1000
diF /dt (A/µs)
Fig 17. Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
560
25
IF = 45A
V R = 85V
20
TJ = 25°C
TJ = 125°C
15
QRR (A)
IRR (A)
IF = 30A
V R = 85V
3.5
IRR (A)
VGS(th) , Gate threshold Voltage (V)
4.0
10
480
IF = 30A
V R = 85V
400
TJ = 25°C
TJ = 125°C
320
240
5
160
80
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig 19. Typical Stored Charge vs. dif/dt
Fig 18. Typical Recovery Current vs. dif/dt
QRR (A)
560
480
IF = 45A
V R = 85V
TJ = 25°C
400
TJ = 125°C
320
240
160
80
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
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AUIRFP4110
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2017-09-15
AUIRFP4110
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUIRFP4110
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
A= Automotive, LeadFree
Lot Code
TO-247AC package is not recommended for Surface Mount Application.
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AUIRFP4110
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
TO-247AC
N/A
Class M4 (+/- 800)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000)†
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
9/15/2017
Comments
Updated datasheet with corporate template
Corrected typo error on part marking on page 8.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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