AUIRFP4409

AUTOMOTIVE GRADE AUIRFP4409 HEXFET® Power MOSFET Features Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *   D Package Type AUIRFP4409 TO-247AC 300V RDS(on) typ. 56m G 69m max S ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number VDSS 38A G D S TO-247AC AUIRFP4409 G D S Gate Drain Source Standard Pack Form Quantity Tube 25 Orderable Part Number AUIRFP4409 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Continuous Drain Current, VGS @ 10V Max. 38 Units ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM Pulsed Drain Current  152 PD @TC = 25°C Maximum Power Dissipation 341 W Linear Derating Factor 2.3 W/°C Gate-to-Source Voltage Single Pulse Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) ± 20 541 V mJ VGS EAS (Thermally limited) TJ TSTG Mounting Torque, 6-32 or M3 Screw -55 to + 175 °C   300 10 lbf·in (1.1 N·m)   Thermal Resistance   RJC RCS RJA Parameter Junction-to-Case  Case-to-Sink, Flat Greased Surface Junction-to-Ambient  Typ. ––– 0.24 ––– Max. 0.44 ––– 40 Units °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-21 AUIRFP4409   Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units 300 ––– ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.24 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 56 69 VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 ––– ––– ––– ––– ––– 1.3 100 -100 ––– V(BR)DSS Drain-to-Source Breakdown Voltage Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 3.5mA m VGS = 10V, ID = 24A  V µA nA VDS = VGS, ID = 250µA VDS =300 V, VGS = 0V VDS =300V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V  Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VDS = 50V, ID =24A ID = 24A nC   VDS = 150V VGS = 10V VDD = 195V ID = 24A ns RG= 2.2 VGS = 10V gfs Qg Qgs Qgd td(on) tr Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time 45 ––– ––– ––– ––– ––– ––– 83 28 26 18 23 ––– 125 42 39 ––– ––– S td(off) Turn-Off Delay Time ––– 34 ––– tf Ciss Coss Fall Time Input Capacitance Output Capacitance ––– ––– ––– 20 5168 300 ––– ––– ––– Crss Reverse Transfer Capacitance ––– 77 ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 196 ––– Coss eff.(TR) Output Capacitance (Time Related) ––– 265 ––– Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 40 ––– ––– 160 VSD Diode Forward Voltage ––– ––– 1.3 trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– 302 379 1739 2497 13 ––– ––– ––– ––– ––– VGS = 0V VDS = 50V ƒ = 1.0MHz pF   VGS = 0V, VDS = 0V to 240V See Fig.11 VGS = 0V, VDS = 0V to 240V Diode Characteristics   IS ISM A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 24A,VGS = 0V  TJ = 25°C VDD = 255V TJ = 125°C IF = 24A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  ns Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max EAS limit, starting TJ = 25°C, L = 2.05mH, RG = 50, IAS = 24A, VGS =10V. ISD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width 400µs; duty cycle  2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 http://www.irf.com/technical-info/ app notes/an-994.pdf Ris measured at TJ approximately 90°C         2 2017-09-21 AUIRFP4409   1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 1 5.0V 0.1 BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 10 5.0V 1 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.01 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 100 Fig 2. Typical Output Characteristics 1000 100 TJ = 175°C TJ = 25°C 10 1 VDS = 50V 60µs PULSE WIDTH ID = 24A VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 0.1 2 4 6 8 10 12 -60 14 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd Ciss 1000 Coss Crss 100 60 100 140 180 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 10000 20 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 -20 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID = 24A 12.0 VDS = 240V VDS = 150V 10.0 VDS= 60V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2017-09-21 AUIRFP4409   1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175°C 100 TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R (on) DS 100 100µsec 10 1msec 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1.6 10 42 ID, Drain Current (A) 35 28 21 14 7 0 50 75 100 125 150 175 370 360 Id = 3.5mA 350 340 330 320 310 300 290 280 270 -60 -20 TC , Case Temperature (°C) 20 60 100 140 180 TJ , Temperature ( °C ) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 9.0 6.0 VGS(th), Gate threshold Voltage (V) 8.0 7.0 6.0 Energy (µJ) 1000 Fig 8. Maximum Safe Operating Area V(BR)DSS, Drain-to-Source Breakdown Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 25 100 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) 5.0 4.0 3.0 2.0 1.0 0.0 5.0 4.0 3.0 ID = 250µA ID = 1.0mA ID = 1.0A 2.0 1.0 -50 0 50 100 150 200 250 300 350 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 4 DC -75 -25 25 75 125 175 225 TJ , Temperature ( °C ) Fig 12. Threshold Voltage vs. Temperature 2017-09-21 AUIRFP4409   Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 60 50 IF = 16A VR = 255V IRRM (A) IRRM (A) 50 TJ = 25°C TJ = 125°C 40 IF = 24A VR = 255V 30 20 TJ = 25°C TJ = 125°C 40 30 20 10 10 0 200 400 600 800 0 1000 200 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 14. Typical Recovery Current vs. dif/dt Fig 15. Typical Recovery Current vs. dif/dt 5000 3500 IF = 16A VR = 255V 3000 IF = 24A VR = 255V 4500 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4000 2500 QRR (nC) QRR (nC) 400 2000 3500 3000 2500 2000 1500 1500 1000 1000 0 200 400 600 800 diF /dt (A/µs) Fig 16. Typical Stored Charge vs. dif/dt 5 1000 0 200 400 600 800 1000 diF /dt (A/µs) Fig 17. Typical Stored Charge vs. dif/dt 2017-09-21 AUIRFP4409   Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 21a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 21b. Gate Charge Waveform 2017-09-21 AUIRFP4409   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUIRFP4409 YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX A= Automotive, LeadFree Lot Code TO-247AC package is not recommended for Surface Mount Application. 7 2017-09-21 AUIRFP4409   Qualification Information  Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Machine Model TO-247AC Human Body Model ESD Charged Device Model RoHS Compliant N/A Class M4 (+/- 500V)† AEC-Q101-002 Class H2 (+/- 4000V)† AEC-Q101-001 Class C5 (+/- 2000)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 9/21/2017 Comments   Updated datasheet with corporate template Corrected typo error on package outline and part marking on page 7. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 8 2017-09-21