AUIRFP4568
AUIRFP4568-E
AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on) typ.
Package Type
AUIRFP4568
AUIRFP4568-E
TO-247AC
Long Lead TO-247AC
4.8m
max.
5.9m
ID
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
Base part number
150V
171A
G
D
S
G
TO-247AC
AUIRFP4568
G
Gate
S
Long Lead TO-247AC
AUIRFP4568-E
D
Drain
Standard Pack
Form
Quantity
Tube
25
Tube
25
D
S
Source
Orderable Part Number
AUIRFP4568
AUIRFP4568-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
171
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
121
684
517
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
Max.
Units
A
W
3.45
± 30
763
See Fig.14,15, 22a, 22b
18.5
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.24
–––
0.29
–––
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFP4568/AUIRFP4568-E
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Trans conductance
RG
Internal Gate Resistance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
162
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
0.17 ––– V/°C Reference to 25°C, ID = 5mA
4.8
5.9 m VGS = 10V, ID = 103A
–––
5.0
V VDS = VGS, ID = 250µA
––– –––
S VDS = 50V, ID = 103A
1.0
–––
–––
20
VDS =150 V, VGS = 0V
µA
––– 250
VDS =150V,VGS = 0V,TJ =125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 151 227
–––
52
–––
–––
55
–––
–––
96
–––
–––
27
–––
––– 119 –––
–––
47
–––
–––
84
–––
––– 10470 –––
––– 977 –––
––– 203 –––
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
–––
897
–––
–––
1272
–––
Min.
Typ. Max. Units
–––
–––
171
–––
–––
684
–––
–––
–––
–––
–––
–––
–––
110
133
515
758
8.8
1.3
–––
–––
–––
–––
–––
Effective Output Capacitance (Time Related)
Coss eff.(TR)
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 103A
VDS = 75V
nC
VGS = 10V
VDD = 98V
ID = 103A
ns
RG= 1.0
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig. 5
pF
VGS=0V, VDS=0V to 120V
(see fig.11)
VGS = 0V, VDS = 0V to 120V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 103A,VGS = 0V
TJ = 25°C
ns
VR =100V
TJ = 125°C
IF = 103A
TJ = 25°C
nC
TJ = 125°C
di/dt = 100A/µs
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.144mH, RG = 25, IAS = 103A, VGS =10V. Part not recommended for use above this value.
ISD 103A, di/dt 360A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ of approximately 90°C.
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AUIRFP4568/AUIRFP4568-E
1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
60µs PULSE WIDTH
Tj = 25°C
0.1
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
60µs PULSE WIDTH
Tj = 175°C
4.5V
1
0.01
0.1
1
10
0.1
100
Fig. 1 Typical Output Characteristics
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
Fig. 2 Typical Output Characteristics
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 50V
60µs PULSE WIDTH
3
4
5
6
7
ID = 103A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.1
8
-60 -40 -20 0 20 40 60 80 100 120 140160 180
9
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
1000000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
Crss = C gd
100000
Coss = Cds + Cgd
Ciss
10000
C oss
1000
Crss
100
14.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
C, Capacitance (pF)
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
ID= 103A
12.0
VDS = 120V
VDS = 75V
VDS= 30V
10.0
8.0
6.0
4.0
2.0
0.0
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
1
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2019-04-29
AUIRFP4568/AUIRFP4568-E
10000
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 25°C
100
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
1msec
DC
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.8
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
180
160
ID, Drain Current (A)
140
120
100
80
60
40
20
0
75
100
125
150
Id = 5mA
185
180
175
170
165
160
155
150
145
140
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
3500
EAS , Single Pulse Avalanche Energy (mJ)
12.0
ID
21.5A
29.3A
BOTTOM 103A
3000
10.0
TOP
2500
8.0
Energy (µJ)
1000
190
T C , Case Temperature (°C)
2000
6.0
1500
4.0
1000
2.0
0.0
500
0
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
4
100
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
50
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
25
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2019-04-29
AUIRFP4568/AUIRFP4568-E
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
Ri (°C/W)
R3
R3
C
1
2
3
2
3
Ci= iRi
Ci= iRi
C
I (sec)
0.06336
0.000278
0.11088
0.005836
0.11484
0.053606
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
900
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 103A
800
700
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
600
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy
vs. Temperature
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AUIRFP4568/AUIRFP4568-E
60
50
IF = 68A
V R = 100V
TJ = 25°C
40
TJ = 125°C
5.5
5.0
4.5
4.0
IRR (A)
VGS(th) , Gate threshold Voltage (V)
6.0
3.5
3.0
ID = 250µA
20
ID = 1.0mA
ID = 1.0A
2.5
2.0
30
10
1.5
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
T J , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
70
3600
60
50
IF = 103A
V R = 100V
3200
TJ = 25°C
TJ = 125°C
2800
IF = 68A
V R = 100V
TJ = 25°C
TJ = 125°C
2400
40
(A)
QQRRRR(nC)
IRR (A)
400
30
2000
1600
20
1200
10
800
0
400
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
4000
IF = 103A
V R = 100V
3600
3200
TJ = 25°C
TJ = 125°C
2800
QRRQ(nC)
RR (A)
2400
2000
1600
1200
800
400
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFP4568/AUIRFP4568-E
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2019-04-29
AUIRFP4568/AUIRFP4568-E
TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
Part Number
AUIRFP4568
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
8
2019-04-29
AUIRFP4568/AUIRFP4568-E
Long Lead TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
Long Lead TO-247AC Part Marking Information
Part Number
AUIRFP4568-E
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
9
2019-04-29
AUIRFP4568/AUIRFP4568-E
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
TO-247AC
N/A
Long Lead TO-247AC
Class M4 (+/- 800V)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
Comments
10/21/2015
Updated datasheet with corporate template
Removed obsolete parts “AUIRFP4568E” on all pages
Corrected ordering table on page 1.
4/29/2019
Added AUIRFP4568-E (Long Lead TO-247AC)package –all pages
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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