AUIRFR024NTRL

  AUIRFR024N AUIRFU024N AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Package Type AUIRFU024N I-Pak AUIRFR024N D-Pak 55V RDS(on) max. 0.075 ID 17A D D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number VDSS   G S G I-Pak AUIRFU024N D-Pak AUIRFR024N G Gate D Drain Standard Pack Form Quantity Tube 75 Tube 75 Tape and Reel Left 3000 S D S Source Orderable Part Number AUIRFU024N AUIRFR024N AUIRFR024NTRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation 12 68 45 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance   Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount)  Junction-to-Ambient Units A W 0.3 ± 20 71 10 4.5 5.0 -55 to + 175 W/°C V mJ A mJ V/ns   300   °C  Typ. Max. Units ––– ––– ––– 3.3 50 110 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFR/U024N   Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 ––– ––– V VGS = 0V, ID = 250µA ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.075  VGS = 10V, ID = 10A  2.0 ––– 4.0 V VDS = VGS, ID = 250µA 4.5 ––– ––– S VDS = 25V, ID = 10A  ––– ––– 25 VDS = 55 V, VGS = 0V µA ––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.9 34 19 27 20 5.3 7.6 ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– 370 140 65 ––– ––– ––– Min. Typ. Max. Units ––– ––– 17 ––– ––– 68 ––– ––– ––– ––– 56 120 1.3 83 180 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 10A nC   VDS = 44V VGS = 10V, See Fig 6 and 13  VDD = 28V ID = 10A ns RG = 24 RD = 2.6See Fig 10  Between lead, 6mm (0.25in.) nH   from package and center of die contact  VGS = 0V pF   VDS = 25V ƒ = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 10A,VGS = 0V  ns TJ = 25°C ,IF = 10A nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)  VDD = 25V, starting TJ = 25°C, L = 1mH, RG = 25, IAS = 10A, VGS =10V. (See Fig.12)  ISD 10A, di/dt 280A/µs, VDD V(BR)DSS, TJ  175°C.  Pulse width 300µs; duty cycle  2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact . Uses IRFZ24N data and test conditions.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-10-12 AUIRFR/U024N   Fig. 1 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics 3 Fig. 2 Typical Output Characteristics Fig. 4 Normalized On-Resistance vs. Temperature 2015-10-12 AUIRFR/U024N   Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 2015-10-12 AUIRFR/U024N   Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-12 AUIRFR/U024N   15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform   6 Fig 13b. Gate Charge Test Circuit 2015-10-12 AUIRFR/U024N   Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs   7 2015-10-12 AUIRFR/U024N   D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUFR024N YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-12 AUIRFR/U024N   I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number AUFU024N YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/   9 2015-10-12 AUIRFR/U024N   D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-12 AUIRFR/U024N   Qualification Information Qualification Level Moisture Sensitivity Level   Machine Model ESD Human Body Model   Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 I-Pak Class M2 (+/- 150V)† AEC-Q101-002 Class H1A (+/- 500V)† AEC-Q101-001 Class C5 (+/- 2000V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 10/12/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   11 2015-10-12