AUIRFR2607Z

AUTOMOTIVE GRADE AUIRFR2607Z   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * D-Pak typ. 17.6m max. 22m ID (Silicon Limited) 45A ID (Package Limited) 42A D G S D-Pak AUIRFR2607Z G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type AUIRFR2607Z 75V RDS(on) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number VDSS   S Source Orderable Part Number AUIRFR2607Z AUIRFR2607ZTRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 45 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 32 ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Maximum Power Dissipation 42 180 110 VGS EAS EAS (Tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy Tested Value  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance   Symbol RJC RJA RJA Parameter Junction-to-Case  Junction-to-Ambient ( PCB Mount)  Junction-to-Ambient Units A W 0.72 ± 20 96 96 See Fig.15,16, 12a, 12b W/°C V mJ A mJ -55 to + 175   300   °C  Typ. Max. Units ––– ––– ––– 1.38 50 110 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFR2607Z   Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 75 ––– ––– V VGS = 0V, ID = 250µA ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA ––– 17.6 22 m VGS = 10V, ID = 30A  2.0 ––– 4.0 V VDS = VGS, ID = 50µA 36 ––– ––– S VDS = 25V, ID = 30A ––– ––– 20 VDS = 75 V, VGS = 0V µA ––– ––– 250 VDS = 75V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 34 8.9 14 14 59 39 28 51 ––– ––– ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 1440 190 110 720 130 230 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 45 ––– ––– 180 ––– ––– ––– ––– 30 28 1.3 45 42 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Output Capacitance Coss Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 30A nC   VDS = 60V VGS = 10V VDD = 38V ID = 30A ns RG = 15 VGS = 10V Between lead, 6mm (0.25in.) nH   from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz pF   VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 60V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V  Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 30A,VGS = 0V  ns TJ = 25°C ,IF = 30A, VDD = 38V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)  Limited by TJmax , starting TJ = 25°C, L = 0.21mH, RG = 25, IAS = 30A, VGS =10V. Part not recommended for use above this value.  Pulse width 1.0ms; duty cycle  2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90°C Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. 2 2015-10-12 AUIRFR2607Z   1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 1 4.5V  60µs PULSE WIDTH Tj = 25°C 1 10 BOTTOM 4.5V 10  60µs PULSE WIDTH Tj = 175°C 1 0.1 0.1 100 0.1 100 10 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 60 Gfs, Forward Transconductance (S) 1000.0 ID, Drain-to-Source Current) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 100.0 TJ = 175°C 10.0 TJ = 25°C 1.0 VDS = 20V  60µs PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 TJ = 25°C 50 40 TJ = 175°C 30 20 10 VDS = 10V 380µs PULSE WIDTH 0 0.1 10.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 0 10 20 30 40 ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Transconductance Vs. Drain Current 2015-10-12 AUIRFR2607Z   2400 20 2000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance (pF) Coss = Cds + Cgd 1600 Ciss 1200 800 400 Coss Crss 10 VDS= 30V VDS= 12V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 20 30 40 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 100.0 TJ = 175°C 10.0 1.0 TJ = 25°C 50 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100µsec 10 1 10msec Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1msec DC 0.1 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 10 QG Total Gate Charge (nC) 1000.0 ISD , Reverse Drain Current (A) VDS = 60V 16 0 0 1 ID= 30A 2.4 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-10-12 AUIRFR2607Z   50 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 40 30 20 10 0 ID = 30A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TC , Case Temperature (°C) TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 C 1 2 2 Ci= iRi Ci= iRi 0.01 SINGLE PULSE ( THERMAL RESPONSE ) C Ri (°C/W) i (sec) 0.71826 0.000423 0.66173 0.004503 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-12 AUIRFR2607Z   15V D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS, Single Pulse Avalanche Energy (mJ) 400 DRIVER L VDS ID 3.5A 4.8A BOTTOM 30A TOP 300 200 100 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 5.0 Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr VGS(th) Gate threshold Voltage (V) Id ID = 1.0A ID = 1.0mA ID = 250µA 4.5 ID = 50µA 4.0 3.5 3.0 2.5 Fig 13a. Gate Charge Waveform 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit   6 2015-10-12 AUIRFR2607Z   1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 100 Notes on Repetitive Avalanche Curves , Figures 15, 16: TOP Single Pulse BOTTOM 1% Duty Cycle ID = 30A 80 (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 60 40 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 20 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 175 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] Fig 16. Maximum Avalanche Energy Vs. Temperature 7 EAS (AR) = PD (ave)·tav 2015-10-12 AUIRFR2607Z   Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Switching Time Test Circuit   8 Fig 18b. Switching Time Waveforms 2015-10-12 AUIRFR2607Z   D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUFR2607Z YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-12 AUIRFR2607Z   D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-12 AUIRFR2607Z   Qualification Information Qualification Level Moisture Sensitivity Level   Machine Model ESD Human Body Model   Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M4 (+/- 425V)† AEC-Q101-002 Class H1B (+/- 1000V)† AEC-Q101-001 Class C5 (+/- 1125V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 10/12/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. 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It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   11 2015-10-12