AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFR3607
AUIRFU3607
HEXFET Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
D
G
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
75V
7.34m
9.0m
80A
56A
I-Pak
AUIRFU3607
D-Pak
AUIRFR3607
G
D
S
Gate
Drain
Source
functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Max.
80
56
56
310
140
0.96
± 20
120
46
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
A
W
W/°C
V
mJ
A
mJ
14
27
-55 to + 175
V/ns
°C
300(1.6mm from case)
Thermal Resistance
Parameter
R
R
R
JC
JA
JA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Typ.
Max.
Units
1.045
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11
Static Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
V(BR)DSS/ TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75
2.0
115
0.096
7.34 9.0
4.0
20
250
100
-100
Conditions
V VGS = 0V, ID = 250 A
V/°C Reference to 25°C, ID = 5mA
VGS = 10V, ID = 46A
m
V VDS = VGS, ID = 100 A
S VDS = 50V, ID = 46A
A VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
56
13
16
40
84
0.55
16
110
43
96
3070
280
130
380
610
Conditions
nC
ID = 46A
VDS = 38V
VGS = 10V
ID = 46A, VDS =0V, VGS = 10V
ns
VDD = 49V
ID = 46A
RG = 6.8
VGS = 10V
VGS = 0V
VDS = 50V
= 1.0MHz
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
pF
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25 , IAS = 46A, VGS =10V. Part not recommended for use
above this value.
2
Min. Typ. Max. Units
80
310
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 46A, VGS = 0V
TJ = 25°C
VR = 64V,
TJ = 125°C
IF = 46A
di/dt = 100A/ s
TJ = 25°C
S
1.3
V
33
50
ns
39
59
32
48
nC
TJ = 125°C
47
71
1.9
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ISD 46A, di/dt 1920A/ s, VDD V(BR)DSS, TJ 175°C.
Pulse width 400 s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
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Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
3L-D PAK
MSL1
3L-I-PAK
N/A
Class M4(+/- 600V )
(per AEC-Q101-002)
Class H1C(+/- 2000V )
(per AEC-Q101-001)
Class C4(+/- 1000V )
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
1000
1000
TOP
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
BOTTOM
100
4.5V
10
4.5V
60 s PULSE WIDTH
60 s PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
1
0.1
1
10
0.1
100
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
3.0
ID = 80A
VGS = 10V
2.5
100
2.0
T J = 175°C
10
T J = 25°C
1.5
1
1.0
VDS = 25V
60 s PULSE WIDTH
0.5
0.1
2
3
4
5
6
7
8
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 4. Normalized On-Resistance vs. Temperature
12.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
ID= 46A
10.0
VDS= 24V
VDS= 15V
Coss = Cds + Cgd
8.0
10000
Ciss
6.0
Coss
1000
4.0
Crss
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
0
10
20
30
40
50
60
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100 sec
100
T J = 175°C
1msec
10
T J = 25°C
10msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
DC
1
0.1
0.0
0.5
1.0
1.5
1
2.0
10
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
100
80
Id = 5mA
70
Limited By Package
95
60
90
50
85
40
30
80
20
75
10
70
0
25
50
75
100
125
150
-60 -40 -20 0 20 40 60 80 100120140160180
175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.20
Fig 10. Drain-to-Source Breakdown Voltage
500
ID
5.6A
11A
BOTTOM 46A
450
1.00
TOP
400
350
0.80
300
0.60
250
200
0.40
150
100
0.20
50
0.00
0
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
10.00
1.00
D = 0.50
0.20
0.10
0.05
0.10
R1
R1
R3
R3
R4
R4
J
C
J
0.02
0.01
0.01
R2
R2
1
2
1
3
2
4
3
Ci= iRi
Ci iRi
1E-005
i (sec)
0.01109
0.000003
0.26925
0.000130
0.49731
0.001301
0.26766
0.008693
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.00
1E-006
4
Ri (°C/W)
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
150
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 46A
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2 T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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4.5
20
IF = 31A
V R = 64V
4.0
TJ = 25°C
TJ = 125°C
15
3.5
3.0
10
ID = 100 A
2.5
ID = 250 A
2.0
ID = 1.0mA
5
ID = 1.0A
1.5
1.0
0
-75 -50 -25 0
25 50 75 100 125 150 175 200
0
200
T J , Temperature ( °C )
400
600
800
1000
800
1000
diF /dt (A/ s)
Fig 16. Threshold Voltage vs. Temperature
560
20
IF = 46A
V R = 64V
TJ = 25°C
TJ = 125°C
15
IF = 31A
V R = 64V
480
TJ = 25°C
TJ = 125°C
400
320
10
240
160
5
80
0
0
0
200
400
600
800
0
1000
200
400
600
diF /dt (A/ s)
diF /dt (A/ s)
560
IF = 46A
V R = 64V
480
TJ = 25°C
TJ = 125°C
400
320
240
160
80
0
0
200
400
600
800
1000
diF /dt (A/ s)
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7
Driver Gate Drive
D=
Period
P.W.
P.W.
Period
VGS=10V
d
d
d
D.U.T. ISD Waveform
Reverse
Recovery
Current
d
d
d
d
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple
ISD
5%
for N-Channel
Fig 20.
HEXFET Power MOSFETs
15V
G
VGS
20V
Fig 21a. Unclamped Inductive Test Circuit
LD
Fig 21b. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1 s
Duty Factor < 0.1%
td(on)
Fig 22a. Switching Time Test Circuit
tr
td(off)
tf
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
8
Fig 23a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 23b. Gate Charge Waveform
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9
10
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11
Ordering Information
Base part
Package Type
AUIRFR3607
DPak
AUIRFU3607
IPak
12
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
75
2000
3000
3000
75
AUIRFR3607
AUIRFR3607TR
AUIRFR3607TRL
AUIRFR3607TRR
AUIRFU3607
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