AUIRFS3107TRL

AUIRFS3107 AUIRFSL3107 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features  Advanced Process Technology  Ultra Low On-Resistance  Enhanced dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) typ. Package Type AUIRFSL3107 TO-262 AUIRFS3107 D2-Pak 2.5m max. ID (Silicon Limited) 3.0m 230A ID (Package Limited) 195A D D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Base part number 75V S D S G G TO-262 AUIRFSL3107 D2-Pak AUIRFS3107 G Gate D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 S Source Orderable Part Number AUIRFSL3107 AUIRFS3107 AUIRFS3107TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 160 195 IDM PD @TC = 25°C Pulsed Drain Current  Maximum Power Dissipation 900 370 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case  Junction-to-Ambient (PCB Mount), D2 Pak Units 230 A W 2.5 ± 20 300 See Fig.14,15, 22a, 22b 14 -55 to + 175 W/°C V mJ A mJ V/ns °C 300 Typ. Max. Units ––– ––– 0.40 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-11 AUIRFS/SL3107 Static @ TJ = 25°C (unless otherwise specified) Parameter Typ. Max. Units V Conditions 75 ––– ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 5mA  RDS(on) Static Drain-to-Source On-Resistance ––– 2.5 3.0 m VGS = 10V, ID = 140A  VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs RG Forward Trans conductance Gate Resistance IDSS Drain-to-Source Leakage Current 230 ––– ––– ––– 1.2 ––– ––– ––– 20 ––– ––– 250 S VDS = 50V, ID = 140A  VDS = 75V, VGS = 0V µA VDS = 75V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 V(BR)DSS Drain-to-Source Breakdown Voltage Min. nA VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 160 38 54 106 19 110 99 100 9370 840 240 ––– ––– ––– ––– ––– ––– ––– ––– ––– Crss Reverse Transfer Capacitance ––– 580 ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1130 ––– VDD = 49V ID = 140A ns RG= 2.7 VGS = 10V VGS = 0V VDS = 50V pF ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 0V to 60V Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 1500 ––– VGS = 0V, VDS = 0V to 60V Min. Typ. Max. Units ––– ––– 230 ––– ––– 900 ––– ––– ––– ––– ––– ––– ––– 54 60 103 132 3.6 1.3 ––– ––– ––– ––– ––– Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ID = 140A VDS = 38V nC VGS = 10V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 140A,VGS = 0V  TJ = 25°C VDD = 64V ns TJ = 125°C IF = 140A, TJ = 25°C  di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.045mH, RG = 25, IAS = 140A, VGS =10V. Part not recommended for use above this value.  ISD 140A, di/dt 1380A/µs, VDD V(BR)DSS, TJ  175°C.  Pulse width 400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994  R is measured at TJ approximately 90°C. RJC value shown is at time zero 2 2017-10-11 AUIRFS/SL3107 1000 1000 BOTTOM 100 4.5V BOTTOM  60µs PULSE WIDTH Tj = 175°C  60µs PULSE WIDTH Tj = 25°C 10 0.1 1 10 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current) 4.5V 100 10 TJ = 175°C 100 TJ = 25°C 10 VDS = 25V  60µs PULSE WIDTH ID = 140A VGS = 10V 2.0 1.5 1.0 0.5 1 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 7.0 16 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 100 kHz Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12000 20 40 60 80 100 120 140 160 180 Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 16000 0 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V Ciss 8000 4000 Coss ID= 140A VDS = 60V VDS = 38V 12 8 4 Crss 0 0 1 10 100 0 40 80 120 160 200 240 VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 2017-10-11 AUIRFS/SL3107 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 TJ = 175°C 100 10 TJ = 25°C 1 1000 100µsec 10msec 1.0 1.5 2.0 LIMITED BY PACKAGE 10 1 0.1 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 200 150 100 50 0 50 75 100 125 150 ID = 5mA 90 80 70 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 1400 EAS, Single Pulse Avalanche Energy (mJ) 4.0 3.0 Energy (µJ) 100 100 TC , Case Temperature (°C) 2.0 1.0 ID 21A 49A BOTTOM 140A 1200 TOP 1000 800 600 400 200 0 0.0 0 20 40 60 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 10 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage 25 1 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) 250 DC Tc = 25°C Tj = 175°C Single Pulse 0.1 0.1 0.5 1msec 100 VGS = 0V 0.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 80 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2017-10-11 AUIRFS/SL3107 Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 J 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 3 2 3 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE )  Ri (°C/W) I (sec) 0.047711 0.000071 0.16314 0.000881 0.189304 0.007457 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width 350 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 140A EAR , Avalanche Energy (mJ) 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 2017-10-11 AUIRFS/SL3107 32 ID = 1.0A 4.0 ID = 1.0mA ID = 250µA 3.5 24 IRRM - (A) VGS(th) Gate threshold Voltage (V) 4.5 3.0 2.5 16 2.0 IF = 90A VR = 64V 8 1.5 1.0 TJ = 125°C TJ = 25°C 0 -75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 TJ , Temperature ( °C ) 500 32 800 24 600 16 IF = 135A VR = 64V 200 300 400 500 600 700 800 900 IF = 90A VR = 64V 200 TJ = 125°C TJ = 25°C 0 100 700 400 TJ = 125°C TJ = 25°C 0 600 Fig. 17 - Typical Recovery Current vs. dif/dt QRR - (nC) IRRM - (A) Fig 16. Threshold Voltage vs. Temperature 8 400 dif / dt - (A / µs) 800 900 100 200 300 dif / dt - (A / µs) 400 500 600 700 800 900 dif / dt - (A / µs) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 800 QRR - (nC) 600 400 200 0 IF = 135A VR = 64V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2017-10-11 AUIRFS/SL3107 Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit I AS Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 24b. Gate Charge Waveform 2017-10-11 AUIRFS/SL3107 D2 Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2 Pak (TO-263AB) Part Marking Information Part Number AUIRFS3107 YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code 8 2017-10-11 AUIRFS/SL3107 TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRFSL3107 YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code 9 2017-10-11 AUIRFS/SL3107 D2 Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 10 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2017-10-11 AUIRFS/SL3107 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak MSL1 TO-262 Class M4 (+/- 800V)† AEC-Q101-002 Class H3A (+/- 6000V)† AEC-Q101-001 Class C5 (+/- 2000V)† AEC-Q101-005 Yes Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Highest passing voltage. Revision History Date Comments 10/08/2015   Updated datasheet with corporate template Corrected ordering table on page 1. 10/11/2017  Corrected typo error on part marking on page 8,9. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2017-10-11