AUTOMOTIVE GRADE
AUIRFS3306
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
60V
RDS(on) typ.
max.
3.3m
ID (Silicon Limited)
4.2m
160A
ID (Package Limited)
120A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
Base part number
D2 Pak
AUIRFS3004
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Package Type
D2-Pak
AUIRFS3306
S
G
S
Source
Orderable Part Number
AUIRFS3306
AUIRFS3306TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
160
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
110
120
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
620
230
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
1.5
± 20
184
Thermal Resistance
Symbol
RJC
RJA
Units
A
W
See Fig.14,15, 22a, 22b
14
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Ambient (PCB Mount)
–––
–––
0.65
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFS3306
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Typ. Max. Units
V
Conditions
60
–––
–––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C Reference to 25°C, ID = 5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.3
4.2
m VGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 150µA
gfs
RG
Forward Trans conductance
Internal Gate Resistance
–––
–––
20
VDS = 50V, ID = 75A
Drain-to-Source Leakage Current
–––
0.7
–––
S
Ω
IDSS
230
–––
–––
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
µA
nA
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VDS = 48V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
85
20
26
59
15
76
40
77
4520
500
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
250
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
720
–––
VDD = 30V
ID = 75A
ns
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
880
–––
VGS = 0V, VDS = 0V to 48V
Min.
Typ. Max. Units
–––
––– 160
–––
–––
620
–––
–––
–––
–––
–––
–––
–––
31
35
34
45
1.9
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 75A
VDS = 30V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 75A,VGS = 0V
TJ = 25°C
ns
VR = 51V,
TJ = 125°C
TJ = 25°C IF = 75A
nC
TJ = 125°C di/dt = 100A/µs
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.04mH, RG = 25, IAS = 96A, VGS =10V. Part not recommended for use above this value.
ISD 75A, di/dt 1400A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
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AUIRFS3306
1000
1000
BOTTOM
100
4.5V
BOTTOM
100
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
10
10
0.1
1
10
0.1
100
Fig. 1 Typical Output Characteristics
10
100
Fig. 2 Typical Output Characteristics
2.5
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
20
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
20 40 60 80 100 120 140 160 180
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
8000
0
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
Ciss
4000
2000
Coss
Crss
ID= 75A
VDS = 48V
16
VDS= 30V
VDS= 12V
12
8
4
0
0
1
10
100
0
20
40
60
80
100
120
140
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS3306
10000
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
TJ = 25°C
10
1
1000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
Limited By Package
ID, Drain Current (A)
140
120
100
80
60
40
20
0
75
100
125
150
100
80
ID = 5mA
70
60
50
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
800
EAS, Single Pulse Avalanche Energy (mJ)
1.5
Energy (µJ)
1.0
0.5
ID
13A
18A
BOTTOM 96A
TOP
600
400
200
0
0.0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
180
50
1
VDS , Drain-toSource Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
25
DC
0.1
2.0
VSD , Source-to-Drain Voltage (V)
160
100µsec
10msec
10
0.1
0.4
1msec
100
VGS = 0V
0.2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
60
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
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AUIRFS3306
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
J
R1
R1
J
1
0.01
R2
R2
C
2
1
2
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Ri (°C/W)
I (sec)
0.249761
0.00028
0.400239
0.005548
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
0.05
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 96A
160
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFS3306
16
ID = 1.0A
4.0
ID = 1.0mA
ID = 250µA
3.5
12
ID = 150µA
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
4.5
3.0
2.5
2.0
8
IF = 30A
VR = 51V
4
1.5
1.0
TJ = 125°C
TJ = 25°C
0
-75 -50 -25
0
25
50
75
100 125 150 175
100 200 300 400 500 600 700 800 900 1000
TJ , Temperature ( °C )
dif / dt - (A / µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
16
350
300
250
QRR - (nC)
IRRM - (A)
12
8
4
0
IF = 45A
VR = 51V
200
150
IF = 30A
VR = 51V
100
50
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
350
300
QRR - (nC)
250
200
150
100
50
0
IF = 45A
VR = 51V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFS3306
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS3306
D2- Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2- Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS3306
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
8
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AUIRFS3306
D2- Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
9
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
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AUIRFS3306
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H2 (+/- 3000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
10/11/2017
Comments
Updated datasheet with corporate template
Corrected typo error on part marking on page 8.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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