AUIRFS3307Z
AUIRFSL3307Z
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
75V
RDS(on) typ.
4.6m
max.
ID (Silicon Limited)
5.8m
128A
ID (Package Limited)
120A
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
Package Type
AUIRFSL3307Z
TO-262
AUIRFS3307Z
D2-Pak
S
D
S
G
D2Pak
G
TO-262
AUIRFS3307Z
AUIRFSL3307Z
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
S
Source
Orderable Part Number
AUIRFSL3307Z
AUIRFS3307Z
AUIRFS3307ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
90
120
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
512
230
VGS
dv/dt
EAS
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D2 Pak
Units
128
A
W
1.5
± 20
6.7
140
See Fig.14,15, 22a, 22b
W/°C
V
V/ns
mJ
A
mJ
-55 to + 175
300
°C
Typ.
Max.
Units
–––
–––
0.65
40
°C/W
HEXFET® is a registered trademark of Infineon.
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AUIRFS/SL3307Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
75
Typ. Max. Units
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.6
5.8
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 150µA
gfs
Forward Trans conductance
Drain-to-Source Leakage Current
–––
–––
–––
20
S
IDSS
320
–––
VDS = 50V, ID = 75A
VDS = 75V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
RG
Gate-to-Source Reverse Leakage
Gate Resistance
–––
–––
–––
0.70
-100
–––
0.094 –––
V/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 75A
µA
nA
VDS = 75V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
79
19
24
55
15
64
38
65
4750
420
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
190
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
440
–––
VDD = 49V
ID = 75A
ns
RG= 2.6
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 60V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
410
–––
VGS = 0V, VDS = 0V to 60V
Min.
Typ. Max. Units
–––
––– 128
–––
–––
512
–––
–––
–––
–––
–––
–––
–––
33
39
42
56
2.2
1.3
50
59
63
84
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 75A
VDS = 38V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 75A,VGS = 0V
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 75A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.050mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
ISD 75A, di/dt 1570A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
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AUIRFS/SL3307Z
1000
1000
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
10
BOTTOM
4.5V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
0.1
100
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
100
T J = 175°C
T J = 25°C
10
1
VDS = 25V
60µs PULSE WIDTH
ID = 72A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
12.0
VGS, Gate-to-Source Voltage (V)
ID = 72A
Coss = Cds + Cgd
C, Capacitance (pF)
100
Fig. 2 Typical Output Characteristics
0.1
10000
C iss
Coss
1000
Crss
100
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
10
2.5
1000
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
10.0
VDS = 60V
VDS = 38V
VDS = 15V
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS/SL3307Z
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1
1000
VGS = 0V
0.5
1.0
1.5
100µsec
100
1msec
10msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
0.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
2.0
10
VSD , Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
150
Limited By Package
ID, Drain Current (A)
125
100
75
50
25
0
25
50
75
100
125
150
100
Id = 5mA
95
90
85
80
75
70
65
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fg 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1.2
EAS , Single Pulse Avalanche Energy (mJ)
600
1.0
Energy (µJ)
0.8
0.6
0.4
0.2
0.0
20
30
40
50
60
70
ID
15A
26A
BOTTOM 75A
TOP
500
400
300
200
100
0
80
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
4
100
VDS , Drain-to-Source Voltage (V)
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AUIRFS/SL3307Z
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
J
0.02
0.01
0.01
R1
R1
J
1
R2
R2
Ri (°C/W)
R3
R3
C
1
2
2
3
3
Ci= iRi
Ci= iRi
1E-005
0.1164
0.000088
0.3009
0.001312
0.2313
0.009191
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
I (sec)
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
Duty Cycle =
Single Pulse
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
150
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 75A
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFS/SL3307Z
20
IF = 48A
V R = 64V
TJ = 25°C
4.0
3.5
15
TJ = 125°C
3.0
IRR (A)
VGS(th) , Gate threshold Voltage (V)
4.5
2.5
ID
ID
ID
ID
2.0
1.5
1.0
= 150µA
= 250µA
= 1.0mA
= 1.0A
10
5
0.5
0
-75 -50 -25 0
25 50 75 100 125 150 175 200
0
200
T J , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
600
800
1000
Fig. 17 - Typical Recovery Current vs. dif/dt
20
420
IF = 72A
V R = 64V
IF = 48A
VR = 64V
340
TJ = 25°C
TJ = 125°C
QRR (nC)
15
IRR (A)
400
diF /dt (A/µs)
10
5
TJ = 25°C
TJ = 125°C
260
180
100
0
20
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
420
IF = 72A
VR = 64V
QRR (nC)
340
TJ = 25°C
TJ = 125°C
260
180
100
20
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFS/SL3307Z
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-10-27
AUIRFS/SL3307Z
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUFS3307Z
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2015-10-27
AUIRFS/SL3307Z
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUFSL3307Z
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-10-27
AUIRFS/SL3307Z
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFS/SL3307Z
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
Machine Model
Human Body Model
ESD
MSL1
TO-262
Charged Device Model
RoHS Compliant
Class M4 (+/- 800V)†
AEC-Q101-002
Class H1C (+/- 2000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/27/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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