AUTOMOTIVE GRADE
AUIRFS3806
HEXFET® Power MOSFET
Features
Advanced Process Technology
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
60V
RDS(on) typ.
12.6m
max.
15.8m
43A
ID
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Base part number
D2-Pak
AUIRFS3806
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Package Type
D2-Pak
AUIRFS3806
S
G
S
Source
Orderable Part Number
AUIRFS3806
AUIRFS3806TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
43
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
31
170
71
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D2 Pak
Max.
Units
A
W
0.47
± 20
73
25
7.1
24
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
–––
2.12
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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2017-10-12
AUIRFS3806
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
60
Typ. Max. Units
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.075 –––
V/°C Reference to 25°C, ID = 5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
12.6
15.8
m VGS = 10V, ID = 25A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
RG
Forward Trans conductance
Internal Gate Resistance
IDSS
Drain-to-Source Leakage Current
41
–––
–––
–––
0.79
–––
–––
–––
20
–––
–––
250
S VDS = 10V, ID = 25A
VDS = 60V, VGS = 0V
µA
VDS = 48V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VDS = VGS, ID = 50µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
5.0
6.3
28.3
6.3
40
49
47
1150
130
67
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
190
–––
VDD = 39V
ID = 25A
ns
RG= 20
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
230
–––
VGS = 0V, VDS = 0V to 48V
Min.
Typ. Max. Units
–––
–––
43
–––
–––
170
–––
–––
–––
–––
–––
–––
–––
22
26
17
24
1.4
1.3
33
39
26
36
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 25A
VDS = 30V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 25A,VGS = 0V
TJ = 25°C
ns
VDD = 51V,
TJ = 125°C
TJ = 25°C IF = 25A
nC
TJ = 125°C di/dt = 100A/µs
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.23mH, RG = 25, IAS = 25A, VGS =10V. Part not recommended for use above this value.
ISD 25A, di/dt 1580A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
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2017-10-12
AUIRFS3806
1000
100
BOTTOM
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
4.5V
60µs PULSE WIDTH
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.1
1
10
1
100
0.1
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
60µs PULSE WIDTH
ID = 25A
VGS = 10V
2.0
(Normalized)
R DS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
100
2.5
1.5
1.0
0.5
0.1
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
10000
12.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
VGS , Gate-to-Source Voltage (V)
ID= 25A
Coss = Cds + Cgd
C, Capacitance (pF)
10
Fig. 2 Typical Output Characteristics
1000
Ciss
1000
Coss
C rss
100
10
VDS = 48V
VDS = 30V
10.0
VDS = 12V
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
1
V DS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2017-10-12
AUIRFS3806
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T J = 175°C
10
T J = 25°C
1
100
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
1
2.0
45
40
ID, Drain Current (A)
35
30
25
20
15
10
5
0
50
75
100
125
150
80
Id = 5mA
75
70
65
60
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fg 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
0.4
EAS , Single Pulse Avalanche Energy (mJ)
300
0.3
0.3
Energy (µJ)
100
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
25
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
0.2
0.2
0.1
0.1
0.0
-10
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
DC
70
ID
2.8A
5.1A
BOTTOM 25A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
2017-10-12
AUIRFS3806
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.1
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
Ci= iRi
Ci= iRi
3
3
Ri (°C/W)
i (sec)
0.6086
0.00026
0.9926
0.001228
0.5203
0.00812
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
80
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 25A
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
2017-10-12
4.5
14
4.0
12
3.5
IF = 17A
V R = 51V
TJ = 25°C
TJ = 125°C
10
3.0
2.5
IRR (A)
VGS(th), Gate threshold Voltage (V)
AUIRFS3806
ID = 50µA
ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
1.5
8
6
4
2
1.0
0
0.5
-75 -50 -25 0
0
25 50 75 100 125 150 175 200
200
Fig 16. Threshold Voltage vs. Temperature
1000
IF = 17A
VR = 51V
210
TJ = 25°C
TJ = 125°C
8
QRR (nC)
IRR (A)
800
260
IF = 25A
V R = 51V
10
600
Fig. 17 - Typical Recovery Current vs. dif/dt
14
12
400
diF /dt (A/µs)
TJ , Temperature ( °C )
6
TJ = 25°C
TJ = 125°C
160
110
4
60
2
0
0
200
400
600
800
10
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
260
IF = 25A
VR = 51V
QRR (nC)
210
TJ = 25°C
TJ = 125°C
160
110
60
10
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFS3806
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2017-10-12
AUIRFS3806
D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2-Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS3806
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
8
2017-10-12
AUIRFS3806
D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
9
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
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2017-10-12
AUIRFS3806
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
MSL1
Class M2 (+/- 200V)†
AEC-Q101-002
Class H1B (+/- 700V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
12/2/2015
10/12/2017
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 7.
Corrected typo Coss eff test condition from “60V” to “48V” on page 2.
Corrected typo error on part marking on page 8.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2017-10-12
