AUIRFS4115-7P
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Package Type
AUIRFS4115-7P
D2Pak 7 Pin
150V
RDS(on) typ.
max.
10m
11.8m
105A
ID
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base Part Number
VDSS
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS4115-7P
AUIRFS4115-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
105
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
74
420
380
VGS
EAS
IAR
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
EAR
dv/dt
TJ
TSTG
Parameter
Junction-to-Case
Junction-to-Ambient
Units
A
W
2.5
± 20
230
See Fig.14,15, 22a, 22b
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Max.
W/°C
V
mJ
A
mJ
V/ns
32
-55 to + 175
300
°C
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFS4115-7P
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
150
–––
–––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.18
–––
V/°C Reference to 25°C, ID = 3.5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
10
11.8
m VGS = 10V, ID = 63A
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
93
–––
–––
–––
2.1
–––
–––
–––
20
–––
–––
250
S VDS = 50V, ID = 63A
VDS = 150V, VGS = 0V
µA
VDS = 150V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
nA
Conditions
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
73
28
28
45
18
50
37
23
5320
490
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
450
–––
VDD = 98V
ID = 63A
ns
RG= 2.1
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
520
–––
VGS = 0V, VDS = 0V to 120V
Min.
Typ. Max. Units
–––
–––
104
–––
–––
420
–––
–––
–––
–––
–––
–––
–––
82
99
271
385
6.0
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 63A
VDS = 75V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 63A,VGS = 0V
TJ = 25°C
VDD = 130V
ns
TJ = 125°C
IF = 63A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.115mH, RG = 25, IAS = 63A, VGS =10V. Part not recommended for use above
this value.
ISD 63A, di/dt 2510A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
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AUIRFS4115-7P
1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
5.0V
100
BOTTOM
10
5.0V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.01
0.1
1
10
100
0.1
1000
VDS, Drain-to-Source Voltage (V)
100
1000
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current)
10
Fig. 2 Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 50V
60µs PULSE WIDTH
ID = 63A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
0.1
3.0
4.0
5.0
6.0
7.0
8.0
9.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
8000
16
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
C iss
4000
2000
C oss
Crss
0
1
ID= 63A
VDS = 120V
VDS = 75V
12
VDS = 30V
8
4
0
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS4115-7P
10000
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
10
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
0.1
VSD , Source-to-Drain Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
ID , Drain Current (A)
100
80
60
40
20
0
50
75
100
125
150
100
1000
190
Id = 3.5mA
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
TJ , Temperature ( °C )
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1000
EAS, Single Pulse Avalanche Energy (mJ)
4
3
Energy (µJ)
10
Fig 8. Maximum Safe Operating Area
120
25
1
VDS , Drain-toSource Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
2
1
ID
14A
24A
BOTTOM 63A
TOP
800
600
400
200
0
0
0
20
40
60
80
100
120
25
140
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
4
DC
0.1
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AUIRFS4115-7P
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
J
0.10
0.05
R1
R1
J
1
0.02
0.01
0.01
R2
R2
R3
R3
Ri (°C/W)
R4
R4
C
1
2
2
3
4
3
C
4
Ci= iRi
Ci= iRi
I (sec)
0.015402
0.00001
0.056989
0.000065
0.180208
0.001377
0.14323
0.010705
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
100
0.01
0.05
0.10
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
240
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 63A
200
160
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFS4115-7P
50
ID = 1.0A
ID = 1.0mA
ID = 250µA
5.0
40
30
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
6.0
4.0
3.0
20
2.0
10
1.0
0
-75
-50 -25
0
25
50
75
IF = 42A
VR = 127V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / µs)
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
2400
40
2000
30
1600
QRR - (nC)
IRRM - (A)
50
20
10
0
1200
IF = 63A
VR = 127V
800
TJ = 125°C
TJ = 25°C
400
IF = 42A
VR = 127V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
2400
2000
QRR - (nC)
1600
1200
800
400
IF = 63A
VR = 127V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFS4115-7P
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-12-4
AUIRFS4115-7P
D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))
D2Pak - 7 Pin Part Marking Information
Part Number
AUFS4115-7P
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-12-4
AUIRFS4115-7P
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-12-4
AUIRFS4115-7P
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak 7 Pin
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
Class M3 (+/- 400V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
12/4/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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