AUIRFS4115
AUIRFSL4115
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Package Type
AUIRFSL4115
TO-262
AUIRFS4115
D2-Pak
150V
RDS(on) typ.
10.3m
max.
12.1m
99A
ID
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
VDSS
S
G
G
TO-262
AUIRFSL4115
D2Pak
AUIRFS4115
G
Gate
S
D
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
S
Source
Orderable Part Number
AUIRFSL4115
AUIRFS4115
AUIRFS4115TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
99
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
70
396
375
VGS
dv/dt
EAS
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D2 Pak
Max.
Units
A
W
2.5
± 20
18
230
-55 to + 175
W/°C
V
V/ns
300
mJ
°C
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFS/SL4115
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
150
–––
–––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.18
–––
V/°C Reference to 25°C, ID = 3.5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
10.3
12.1
m VGS = 10V, ID = 62A
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
gfs
Forward Trans conductance
Drain-to-Source Leakage Current
–––
–––
–––
20
S
IDSS
97
–––
VDS = 50V, ID = 62A
VDS = 150V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
RG
Gate-to-Source Reverse Leakage
Internal Gate Resistance
–––
–––
–––
2.3
-100
–––
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
µA
Conditions
VGS = 0V, ID = 250µA
VDS = 150V,VGS = 0V,TJ =125°C
VGS = 20V
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
77
28
26
51
18
73
41
39
5270
490
105
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
460
–––
VDD = 98V
ID = 62A
ns
RG= 2.2
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 120V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
530
–––
VGS = 0V, VDS = 0V to 120V
Min.
Typ. Max. Units
–––
–––
99
–––
–––
396
–––
–––
–––
–––
–––
–––
–––
86
110
300
450
6.5
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 62A
VDS = 75V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 62A,VGS = 0V
TJ = 25°C
VDD = 130V
ns
TJ = 125°C
IF = 62A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.115mH, RG = 25, IAS = 63A, VGS =10V. Part not recommended for use above this value.
ISD 62A, di/dt 1040A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
RJC value shown is at time zero.
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AUIRFS/SL4115
1000
1000
100
BOTTOM
100
10
1
BOTTOM
5.0V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
5.0V
Tj = 175°C
Tj = 25°C
0.1
0.1
1
1
10
0.1
100
Fig. 1 Typical Output Characteristics
100
Fig. 2 Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
3.0
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 50V
60µs PULSE WIDTH
ID = 62A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.1
2
4
6
8
10
12
14
16
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
10000
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Ciss
Coss
1000
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID= 62A
12.0
VDS = 120V
VDS = 75V
VDS = 30V
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-27
AUIRFS/SL4115
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
3.5
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
120
ID, Drain Current (A)
100
80
60
40
20
0
50
75
100
125
150
1000
200
Id = 3.5mA
190
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fg 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
6.0
VGS(th) , Gate threshold Voltage (V)
6.0
5.0
4.0
Energy (µJ)
100
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
25
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
3.0
2.0
1.0
0.0
-20
0
20
40
60
5.0
4.0
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.0
80 100 120 140 160
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
4
1msec
DC
2015-10-27
AUIRFS/SL4115
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
C
2
1
Ri (°C/W)
i (sec)
0.245
0.0059149
0.155
0.0006322
C
2
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
40
TJ = 25°C
TJ = 125°C
IF = 62A
V R = 130V
TJ = 25°C
40
TJ = 125°C
30
IRR (A)
IRR (A)
50
IF = 42A
V R = 130V
20
10
30
20
10
0
0
200
400
600
800
0
1000
0
diF /dt (A/µs)
200
800
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
2500
3000
IF = 42A
VR = 130V
2000
IF = 62A
VR = 130V
2400
TJ = 25°C
TJ = 125°C
1500
QRR (nC)
QRR (nC)
600
diF /dt (A/µs)
Fig. 14 - Typical Recovery Current vs. dif/dt
1000
500
TJ = 25°C
TJ = 125°C
1800
1200
600
0
0
0
200
400
600
800
diF /dt (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
5
400
1000
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 17 - Typical Stored Charge vs. dif/dt
2015-10-27
AUIRFS/SL4115
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 19a. Unclamped Inductive Test Circuit
Fig 20a. Switching Time Test Circuit
I AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 21a. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 21b. Gate Charge Waveform
2015-10-27
AUIRFS/SL4115
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS4115
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-10-27
AUIRFS/SL4115
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRFSL4115
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-10-27
AUIRFS/SL4115
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-10-27
AUIRFS/SL4115
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
MSL1
TO-262
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/27/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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