AUIRFS4127
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
RDS(on) typ.
18.6m
max
S
22m
ID
72A
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
AUIRFS4127
200V
G
Description
Base part number
VDSS
Package Type
D2-Pak
S
G
D2Pak
AUIRFS4127
G
Gate
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
D
Drain
S
Source
Orderable Part Number
AUIRFS4127
AUIRFS4127TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
VGS
dv/dt
EAS
IAR
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Junction-to-Ambient
RJA
Max.
72
51
300
375
2.5
± 20
57
250
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
See Fig. 14, 15, 22a, 22b
-55 to + 175
°C
300(1.6mm from case)
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFS4127
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
––– 0.23 ––– V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 18.6
22
RDS(on)
Static Drain-to-Source On-Resistance
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
gfs
Forward Trans conductance
79
–––
–––
S
–––
–––
20
IDSS
Drain-to-Source Leakage Current
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
RG
Internal Gate Resistance
–––
3.0
–––
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 44A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 44A
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
––– 100 150
ID = 44A
VDS = 100V
Qgs
Gate-to-Source Charge
–––
30
–––
nC
VGS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
31
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
69
–––
td(on)
Turn-On Delay Time
–––
17
–––
VDD = 130V
ID = 44A
tr
Rise Time
–––
18
–––
ns
td(off)
Turn-Off Delay Time
–––
56
–––
RG = 2.7
VGS = 10V
Fall Time
–––
22
–––
tf
Ciss
Input Capacitance
––– 5380 –––
VGS = 0V
VDS = 50V
Coss
Output Capacitance
––– 410 –––
Crss
Reverse Transfer Capacitance
–––
86
–––
pF ƒ = 1.0 MHz (See Fig. 5)
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 360 –––
VGS = 0V, VDS = 0V to 160V
Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 590 –––
VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
Typ.
–––
–––
72
–––
–––
300
–––
–––
–––
–––
–––
–––
–––
136
139
458
688
8.3
1.3
–––
–––
–––
–––
–––
Max. Units
A
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 44A, VGS = 0V
TJ = 25°C VR = 100V,
TJ = 125°C I = 44A
F
TJ = 25°C di/dt = 100A/µs
TJ = 125°C
TJ = 25°C
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.26mH, RG = 25, IAS = 44A, VGS =10V. Part not recommended for use above this value.
ISD 44A, di/dt 760A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
R is measured at TJ approximately 90°C.
RJC value shown is at time zero.
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AUIRFS4127
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
BOTTOM
1
0.1
60µs PULSE WIDTH
Tj = 25°C
4.5V
100
BOTTOM
10
4.5V
1
60µs PULSE WIDTH
Tj = 175°C
0.1
0.01
0.1
1
10
0.1
100
100
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
VDS = 50V
ID, Drain-to-Source Current)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
60µs PULSE WIDTH
100
TJ = 175°C
10
TJ = 25°C
1
ID = 44A
VGS = 10V
3.0
2.5
2.0
1.5
1.0
0.5
0.1
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
8.0
Fig 3. Typical Transfer Characteristics
8000
Ciss
4000
2000
C oss
Crss
1
Fig 4. Normalized On-Resistance vs. Temperature
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
0
20 40 60 80 100 120 140 160 180
16
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
0
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
ID = 44A
VDS = 160V
VDS = 100V
12
VDS = 40V
8
4
0
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
2017-03-28
AUIRFS4127
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
100
10
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
100
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
1.4
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
80
ID, Drain Current (A)
60
40
20
0
50
75
100
125
150
1000
260
Id = 5mA
240
220
200
180
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
TJ , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1000
EAS, Single Pulse Avalanche Energy (mJ)
8.0
6.0
Energy (µJ)
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
25
10
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
4.0
2.0
ID
8.2A
13A
BOTTOM 44A
TOP
800
600
400
200
0
0.0
0
40
80
120
160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Coss Stored Energy
4
DC
0.1
0.1
200
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
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AUIRFS4127
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
250
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 44A
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
2017-03-28
AUIRFS4127
50
ID = 1.0A
ID = 1.0mA
5.0
40
ID = 250µA
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
6.0
4.0
3.0
30
20
IF = 29A
VR = 100V
10
2.0
TJ = 125°C
TJ = 25°C
0
1.0
-75
-50 -25
0
25
50
75
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / µs)
TJ , Temperature ( °C )
Fig 17. Typical Recovery Current vs. dif/dt
60
3000
50
2500
40
2000
QRR - (nC)
IRRM - (A)
Fig 16. Threshold Voltage vs. Temperature
30
20
10
0
1500
1000
IF = 44A
VR = 100V
IF = 29A
VR = 100V
500
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 19. Typical Stored Charge vs. dif/dt
3000
2500
QRR - (nC)
2000
1500
1000
500
0
IF = 44A
VR = 100V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig 20. Typical Stored Charge vs. dif/dt
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AUIRFS4127
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2017-03-28
AUIRFS4127
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUFS4127
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2017-03-28
AUIRFS4127
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2017-03-28
AUIRFS4127
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/27/2015
03/28/2017
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Removed TO-262 Pak “AUIRFSL4127” this devices TO-262 Pak was never released and this part was
erroneously added to the datasheet. –All pages
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2017-03-28
