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AUIRFS8409-7P

AUIRFS8409-7P

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO263-7

  • 描述:

    MOSFETN-CH40V240AD2PAK-7

  • 数据手册
  • 价格&库存
AUIRFS8409-7P 数据手册
AUIRFS8409-7P AUTOMOTIVE GRADE HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * 40V 0.55mΩ 0.75mΩ 522A 240A VDSS RDS(on) typ. max. I D (Silicon Limited) I D (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. D c D G S S G S S S S D2Pak 7 Pin Applications l l l l l Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads SMPS Ordering Information Base part number Package Type AUIRFS8409-7P G D S Gate Drain Source Standard Pack Form Tube Tape and Reel Left Tape and Reel Right D2Pak 7 Pin Complete Part Number Quantity 50 800 800 AUIRFS8409-7P AUIRFS8409-7TRL AUIRFS8409-7TRR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TST G Parameter d Single Pulse Avalanche Energy e Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy d Thermal Resistance Symbol RθJC RθJA e d Parameter k Junction-to-Case Junction-to-Ambient (PCB Mount) j Units c c l 522 369 240 1200 375 2.5 ± 20 -55 to + 175 Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (T hermally limited) EAS (tested) IAR EAR Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) A W W/°C V °C 300 764 1485 mJ See Fig. 14, 15, 24a, 24b A mJ Typ. Max. Units ––– ––– 0.4 40 °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2013 International Rectifier April 30, 2013 AUIRFS8409-7P Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance Gate Threshold Voltage VGS(th) Drain-to-Source Leakage Current IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Qgd Qsync Total Gate Charge Sync. (Qg - Qgd) td(on) Turn-On Delay Time tr Rise Time Turn-Off Delay Time td(off) tf Fall Time Ciss Input Capacitance Output Capacitance Coss Crss Reverse Transfer Capacitance Coss eff. (ER) Effective Output Capacitance (Energy Related) Coss eff. (TR) Effective Output Capacitance (Time Related) Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current ISM (Body Diode) d VSD Diode Forward Voltage dv/dt Peak Diode Recovery f trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Min. 40 ––– ––– 2.2 ––– ––– ––– ––– ––– Typ. ––– 0.026 0.55 3.0 ––– ––– ––– ––– 2.2 Max. ––– ––– 0.75 3.9 1.0 150 100 -100 ––– Units V V/°C mΩ V Min. 176 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 305 84 96 209 32 148 149 107 13975 2140 1438 2620 3306 Max. ––– 460 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions S VDS = 10V, ID = 100A ID = 100A VDS =20V nC VGS = 10V g ID = 100A, VDS =0V, VGS = 10V VDD = 20V ID = 100A ns RG = 2.7Ω VGS = 10V g VGS = 0V VDS = 25V pF ƒ = 1.0 MHz, See Fig. 5 VGS = 0V,VDS=0V to 32V i, See Fig. 11 VGS = 0V, VDS = 0V to 32V h Min. Typ. Max. Units ––– ––– 522c ––– ––– 1200l ––– ––– ––– ––– ––– ––– ––– 0.8 1.6 50 58 59 72 2.2 1.2 ––– ––– ––– ––– ––– ––– Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.(Refer to AN-1140) ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.153mH, RG = 50Ω, IAS = 100A, VGS =10V. Part not recommended for use above this value. „ ISD ≤ 100A, di/dt ≤ 1403A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 2 www.irf.com © 2013 International Rectifier μA nA Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 2mAd VGS = 10V, ID = 100Ag VDS = VGS, ID = 250μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Ω Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C, IS = 100A, VGS = 0Vg V/ns TJ = 175°C, IS = 100A, VDS = 40V TJ = 25°C VR = 34V, ns TJ = 125°C IF = 100A di/dt = 100A/μs g TJ = 25°C nC TJ = 125°C A TJ = 25°C D G S … Pulse width ≤ 400µs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS. ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as C oss while VDS is rising from 0 to 80% VDSS. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ approximately 90°C. Š Pulse drain current is limited by source bonding technology. April 30, 2013 AUIRFS8409-7P 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 BOTTOM 100 4.5V 1 ≤60μs PULSE WIDTH 4.5V ≤60μs PULSE WIDTH Tj = 25°C Tj = 175°C 10 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 T J = 175°C 100 T J = 25°C 10 1 VDS = 10V ≤60μs PULSE WIDTH 0.1 ID = 100A VGS = 10V 1.6 1.2 0.8 0.4 2 3 4 5 6 7 8 -60 VGS, Gate-to-Source Voltage (V) C oss = C ds + C gd Ciss 10000 60 100 140 180 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 100000 20 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 1000000 -20 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Coss Crss 1000 100 ID = 100A 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2013 International Rectifier 0 50 100 150 200 250 300 350 400 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage April 30, 2013 AUIRFS8409-7P 10000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 175°C 100 TJ = 25°C 10 1 1000 100μsec 100 DC 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 Limited By Package 400 300 200 100 0 50 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 600 25 10 48 Id = 2.0mA 47 46 45 44 43 42 41 40 -60 T C , Case Temperature (°C) 2.5 -20 20 60 100 140 180 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage EAS , Single Pulse Avalanche Energy (mJ) 3500 ID 26A 52A BOTTOM 100A 3000 2.0 TOP 2500 Energy (μJ) 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 500 1 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) ID, Drain Current (A) 1msec Limited by Package 1.5 2000 1500 1.0 1000 0.5 0.0 0 -5 0 5 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 500 www.irf.com © 2013 International Rectifier 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent April 30, 2013 AUIRFS8409-7P Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 800 700 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 14, 15 (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 15. Maximum Avalanche Energy vs. Temperature 5 www.irf.com © 2013 International Rectifier April 30, 2013 4.5 4.0 ID = 100A VGS(th), Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m Ω) AUIRFS8409-7P 3.0 2.0 T J = 125°C 1.0 TJ = 25°C 0.0 4 6 8 10 12 14 4.0 3.5 3.0 2.5 ID = 250μA ID = 1.0mA ID = 1.0A 2.0 1.5 1.0 16 18 -75 20 25 Fig 16. On-Resistance vs. Gate Voltage 125 175 225 Fig 17. Threshold Voltage vs. Temperature 700 16 14 12 600 TJ = 25°C TJ = 125°C 500 QRR (nC) 10 IF = 60A V R = 34V 8 6 IF = 60A V R = 34V TJ = 25°C TJ = 125°C 400 300 200 4 100 2 0 0 0 200 400 600 800 0 1000 200 14 10 TJ = 25°C TJ = 125°C 800 1000 450 IF = 100A V R = 34V 400 TJ = 25°C TJ = 125°C 350 QRR (nC) 12 600 Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt IF = 100A V R = 34V 400 diF /dt (A/μs) diF /dt (A/μs) IRRM (A) 75 TJ , Temperature ( °C ) VGS, Gate -to -Source Voltage (V) IRRM (A) -25 8 6 300 250 200 150 4 100 2 0 200 400 600 800 1000 diF /dt (A/μs) Fig. 20 - Typical Recovery Current vs. dif/dt 6 www.irf.com © 2013 International Rectifier 50 0 200 400 600 800 1000 diF /dt (A/μs) Fig. 21 - Typical Stored Charge vs. dif/dt April 30, 2013 RDS(on), Drain-to -Source On Resistance ( mΩ) AUIRFS8409-7P 10.0 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 8.0 6.0 4.0 2.0 0.0 0 100 200 300 400 500 ID, Drain Current (A) Fig 22. Typical On-Resistance vs. Drain Current 7 www.irf.com © 2013 International Rectifier April 30, 2013 AUIRFS8409-7P Driver Gate Drive D.U.T ƒ + ‚ - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor InductorCurrent Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01Ω tp I AS Fig 24a. Unclamped Inductive Test Circuit RD V DS Fig 24b. Unclamped Inductive Waveforms VDS 90% V GS D.U.T. RG + - V DD V10V GS 10% VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) Fig 25a. Switching Time Test Circuit tr t d(off) Fig 25b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V tf .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 26a. Gate Charge Test Circuit 8 www.irf.com © 2013 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 26b. Gate Charge Waveform April 30, 2013 AUIRFS8409-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2013 International Rectifier April 30, 2013 AUIRFS8409-7P D2Pak - 7 Pin Part Marking Information Part Number AUFS8409-7P YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code D2Pak - 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier April 30, 2013 AUIRFS8409-7P † Qualification Information Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 2 MSL1 D PAK - 7 Pin Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Class M4 (+/- 600) AEC-Q101-002 †† Class H3A (+/- 6000) AEC-Q101-001 Class C5 (+/- 2000) AEC-Q101-005 †† †† Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. 11 www.irf.com © 2013 International Rectifier April 30, 2013 AUIRFS8409-7P IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 12 www.irf.com © 2013 International Rectifier April 30, 2013
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