AUIRFS8409-7P
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
40V
0.55mΩ
0.75mΩ
522A
240A
VDSS
RDS(on) typ.
max.
I D (Silicon Limited)
I D (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
D
c
D
G
S
S
G
S
S
S
S
D2Pak 7 Pin
Applications
l
l
l
l
l
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
SMPS
Ordering Information
Base part number
Package Type
AUIRFS8409-7P
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
D2Pak 7 Pin
Complete Part Number
Quantity
50
800
800
AUIRFS8409-7P
AUIRFS8409-7TRL
AUIRFS8409-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
TST G
Parameter
d
Single Pulse Avalanche Energy
e
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
d
Thermal Resistance
Symbol
RθJC
RθJA
e
d
Parameter
k
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Units
c
c
l
522
369
240
1200
375
2.5
± 20
-55 to + 175
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (T hermally limited)
EAS (tested)
IAR
EAR
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
A
W
W/°C
V
°C
300
764
1485
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
Typ.
Max.
Units
–––
–––
0.4
40
°C/W
HEXFET®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
April 30, 2013
AUIRFS8409-7P
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
VGS(th)
Drain-to-Source Leakage Current
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgd
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr
Rise Time
Turn-Off Delay Time
td(off)
tf
Fall Time
Ciss
Input Capacitance
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
ISM
(Body Diode) d
VSD
Diode Forward Voltage
dv/dt
Peak Diode Recovery f
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.026
0.55
3.0
–––
–––
–––
–––
2.2
Max.
–––
–––
0.75
3.9
1.0
150
100
-100
–––
Units
V
V/°C
mΩ
V
Min.
176
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
305
84
96
209
32
148
149
107
13975
2140
1438
2620
3306
Max.
–––
460
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
S VDS = 10V, ID = 100A
ID = 100A
VDS =20V
nC
VGS = 10V g
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
ID = 100A
ns
RG = 2.7Ω
VGS = 10V g
VGS = 0V
VDS = 25V
pF ƒ = 1.0 MHz, See Fig. 5
VGS = 0V,VDS=0V to 32V i, See Fig. 11
VGS = 0V, VDS = 0V to 32V h
Min.
Typ.
Max.
Units
–––
–––
522c
–––
–––
1200l
–––
–––
–––
–––
–––
–––
–––
0.8
1.6
50
58
59
72
2.2
1.2
–––
–––
–––
–––
–––
–––
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 240A by source
bonding technology. Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements.(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.153mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 100A, di/dt ≤ 1403A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
www.irf.com
© 2013 International Rectifier
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 2mAd
VGS = 10V, ID = 100Ag
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Ω
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C, IS = 100A, VGS = 0Vg
V/ns TJ = 175°C, IS = 100A, VDS = 40V
TJ = 25°C
VR = 34V,
ns
TJ = 125°C IF = 100A
di/dt = 100A/μs g
TJ = 25°C
nC
TJ = 125°C
A TJ = 25°C
D
G
S
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% V DSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
C oss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Pulse drain current is limited by source bonding technology.
April 30, 2013
AUIRFS8409-7P
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
BOTTOM
100
4.5V
1
≤60μs PULSE WIDTH
4.5V
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
10
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 10V
≤60μs PULSE WIDTH
0.1
ID = 100A
VGS = 10V
1.6
1.2
0.8
0.4
2
3
4
5
6
7
8
-60
VGS, Gate-to-Source Voltage (V)
C oss = C ds + C gd
Ciss
10000
60
100
140
180
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
100000
20
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
1000000
-20
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Coss
Crss
1000
100
ID = 100A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
www.irf.com
© 2013 International Rectifier
0
50
100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRFS8409-7P
10000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100
TJ = 25°C
10
1
1000
100μsec
100
DC
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
Limited By Package
400
300
200
100
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
600
25
10
48
Id = 2.0mA
47
46
45
44
43
42
41
40
-60
T C , Case Temperature (°C)
2.5
-20
20
60
100
140
180
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
3500
ID
26A
52A
BOTTOM 100A
3000
2.0
TOP
2500
Energy (μJ)
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
500
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
ID, Drain Current (A)
1msec
Limited by Package
1.5
2000
1500
1.0
1000
0.5
0.0
0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
500
www.irf.com
© 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
AUIRFS8409-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
800
700
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
www.irf.com
© 2013 International Rectifier
April 30, 2013
4.5
4.0
ID = 100A
VGS(th), Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFS8409-7P
3.0
2.0
T J = 125°C
1.0
TJ = 25°C
0.0
4
6
8
10
12
14
4.0
3.5
3.0
2.5
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
16
18
-75
20
25
Fig 16. On-Resistance vs. Gate Voltage
125
175
225
Fig 17. Threshold Voltage vs. Temperature
700
16
14
12
600
TJ = 25°C
TJ = 125°C
500
QRR (nC)
10
IF = 60A
V R = 34V
8
6
IF = 60A
V R = 34V
TJ = 25°C
TJ = 125°C
400
300
200
4
100
2
0
0
0
200
400
600
800
0
1000
200
14
10
TJ = 25°C
TJ = 125°C
800
1000
450
IF = 100A
V R = 34V
400
TJ = 25°C
TJ = 125°C
350
QRR (nC)
12
600
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
IF = 100A
V R = 34V
400
diF /dt (A/μs)
diF /dt (A/μs)
IRRM (A)
75
TJ , Temperature ( °C )
VGS, Gate -to -Source Voltage (V)
IRRM (A)
-25
8
6
300
250
200
150
4
100
2
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
www.irf.com
© 2013 International Rectifier
50
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 30, 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFS8409-7P
10.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
8.0
6.0
4.0
2.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
7
www.irf.com
© 2013 International Rectifier
April 30, 2013
AUIRFS8409-7P
Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24a. Unclamped Inductive Test Circuit
RD
V DS
Fig 24b. Unclamped Inductive Waveforms
VDS
90%
V GS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
www.irf.com
© 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 30, 2013
AUIRFS8409-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com
© 2013 International Rectifier
April 30, 2013
AUIRFS8409-7P
D2Pak - 7 Pin Part Marking Information
Part Number
AUFS8409-7P
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
www.irf.com
© 2013 International Rectifier
April 30, 2013
AUIRFS8409-7P
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
2
MSL1
D PAK - 7 Pin
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Class M4 (+/- 600)
AEC-Q101-002
††
Class H3A (+/- 6000)
AEC-Q101-001
Class C5 (+/- 2000)
AEC-Q101-005
††
††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
11
www.irf.com
© 2013 International Rectifier
April 30, 2013
AUIRFS8409-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the
right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any
time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive
industry and / or customer specific requirements with regards to product discontinuance and process change notification. All
products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third
parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
www.irf.com
© 2013 International Rectifier
April 30, 2013