AUTOMOTIVE GRADE
AUIRFZ44N
HEXFET® Power MOSFET
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Package Type
AUIRFZ44N
TO-220
55V
RDS(on) max.
17.5m
ID
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
VDSS
49A
S
D
G
TO-220AB
AUIRFZ44N
G
Gate
D
Drain
Standard Pack
Form
Tube
S
Source
Orderable Part Number
Quantity
50
AUIRFZ44N
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
35
A
IDM
PD @TC = 25°C
Pulsed Drain Current
Power Dissipation
160
94
W
VGS
Linear Derating Factor
Gate-to-Source Voltage
0.63
± 20
W/°C
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
EAS (Tested)
IAR
EAR
dv/dt
TJ
TSTG
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
Max.
Units
49
150
mJ
530
25
9.4
5.0
-55 to + 175
300
A
mJ
V/ns
°C
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.50
–––
1.5
–––
62
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2017-09-25
AUIRFZ44N
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
55
––– –––
V VGS = 0V, ID = 250µA
––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 17.5 m VGS = 10V, ID = 25A
2.0
–––
4.0
V VDS = VGS, ID = 250µA
19
––– –––
S VDS = 25V, ID = 25A
––– –––
25
VDS =55 V, VGS = 0V
µA
––– ––– 250
VDS =44V,VGS = 0V,TJ =150°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
60
44
45
63
14
23
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAs
Single pulse Avalanche Energy
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Forward Turn-On Time
ton
––– 1470
––– 360
–––
88
––– 530
–––
–––
–––
150
ID = 25A
nC VDS = 44V
VGS = 10V , See Fig. 6 and 13
VDD = 28V
ID = 25A
ns
RG= 12
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
mJ IAS = 25A, L = 0.47mH
Min.
Typ. Max. Units
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 25A ,VGS = 0V
ns TJ = 25°C ,IF = 25A
nC di/dt = 100A/µs
–––
–––
49
–––
–––
160
–––
–––
–––
–––
63
170
1.3
95
260
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.48mH, RG = 25, IAS = 25A (See fig. 12)
ISD 25A, di/dt 230A/µs, VDD V(BR)DSS, TJ 175°C
Pulse width 400µs; duty cycle 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
2
2017-09-25
AUIRFZ44N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
100
10
4.5V
4.5V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 175 ° C
10
V DS= 25V
20µs PULSE WIDTH
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
10
100
Fig. 2 Typical Output Characteristics
1000
4
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
11
2.5
ID = 49A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = 10V
0
20
40
60
80 100 120 140 160 180
TJ, Junction Temperature
( °C)
Fig. 4 Normalized On-Resistance
Vs. Temperature
2017-09-25
AUIRFZ44N
2500
VGS , Gate-to-Source Voltage (V)
2000
Ciss
1500
1000
Coss
500
ID = 25A
VDS = 44V
VDS = 27V
VDS = 11V
16
12
8
4
Crss
0
0
1
10
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
20
1000
30
40
50
60
70
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100
TJ = 175 °C
10
TJ = 25 °C
1
V GS = 0 V
0.6
1.2
1.8
VSD ,Source-to-Drain Voltage (V)
Fig. 7. Typical Source-to-Drain Diode
Forward Voltage
4
10
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
0.1
0.0
0
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1msec
1
0.1
2.4
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2017-09-25
AUIRFZ44N
50
ID , Drain Current (A)
40
30
20
Fig 10a. Switching Time Test Circuit
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-09-25
AUIRFZ44N
15V
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
300
ID
10A
18A
25A
TOP
240
BOTTOM
180
120
60
0
25
50
75
100
125
150
Starting T J, Junction Temperature
175
( °C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
2017-09-25
AUIRFZ44N
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
2017-09-25
AUIRFZ44N
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRFZ44N
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
TO-220AB package is not recommended for Surface Mount Application.
8
2017-09-25
AUIRFZ44N
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
3L-TO-220AB
N/A
Class M3 (+/- 400V)†
AEC-Q101-002
Class H1C (+/- 1250V)†
AEC-Q101-001
Class C5 (+/- 1250V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
9/25/2017
Comments
Updated datasheet with corporate template.
Corrected typo error on package outline and part marking on page 8.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
9
2017-09-25
