AUIRFZ44VZS
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
60V
RDS(on) typ.
9.6m
max.
12m
ID
57A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
D2Pak
AUIRFZ44VZS
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Package Type
D2-Pak
AUIRFZ44VZS
S
G
S
Source
Orderable Part Number
AUIRFZ44VZS
AUIRFZ44VZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
VGS
EAS (Thermally Limited)
EAS (Tested)
IAR
EAR
TJ
TSTG
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D2 Pak
Max.
Units
57
40
230
92
0.61
± 20
73
110
See Fig. 12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
Typ.
Max.
Units
–––
–––
1.64
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFZ44VZS
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
60
Typ. Max. Units
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
9.6
12
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Trans conductance
Drain-to-Source Leakage Current
–––
–––
–––
20
S
IDSS
25
–––
VDS = 25V, ID = 34A
VDS = 60V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
0.061 –––
V/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 34A
µA
nA
VDS = 60V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
43
11
18
14
62
35
38
65
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1690
270
130
–––
–––
–––
Coss
Output Capacitance
–––
1870
–––
ID = 34A
nC VDS = 48V
VGS = 10V
VDD = 30V
ID = 34A
ns
RG= 12
VGS = 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V,ƒ = 1.0MHz
Coss
Output Capacitance
–––
260
–––
VGS = 0V, VDS = 48V,ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
510
–––
VGS = 0V, VDS = 0V to 48V
Min.
Typ. Max. Units
–––
–––
57
–––
–––
230
–––
–––
–––
–––
23
17
1.3
35
26
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 34A,VGS = 0V
ns TJ = 25°C ,IF = 34A, VDD = 30V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 34A, VGS =10V. Part not recommended for use above this value.
Pulse width 400µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production, starting TJ = 25°C, L = 0.12mH,
RG = 25, IAS = 34A, VGS =10V. .
This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994..
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AUIRFZ44VZS
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
100
BOTTOM
10
4.5V
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig. 2 Typical Output Characteristics
60
Gfs, Forward Transconductance (S)
1000
ID, Drain-to-Source Current )
1
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100
T J = 175°C
10
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
T J = 175°C
50
40
T J = 25°C
30
20
10
VDS = 15V
380µs PULSE WIDTH
0
1
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
9.0
0
10
20
30
40
50
60
ID, Drain-to-Source Current (A)
Fig. 4 Typical Forward Trans conductance
Vs. Drain Current
2017-10-13
AUIRFZ44VZS
3000
20
2500
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
C, Capacitance (pF)
Coss = Cds + Cgd
2000
Ciss
1500
1000
500
Coss
Crss
VDS= 48V
VDS= 30V
VDS= 12V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
ID= 34A
10
0
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1000.0
1000
100.0
10.0
T J = 25°C
VGS = 0V
0.1
0.2
0.6
40
50
60
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T J = 175°C
1.0
30
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
20
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1.0
1.4
VSD , Source-toDrain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
10
1.8
100µsec
10
1msec
1
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2017-10-13
AUIRFZ44VZS
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
60
ID , Drain Current (A)
50
40
30
20
10
ID = 34A
VGS = 10V
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
J
0.05
0.02
0.01
R1
R1
J
1
R2
R2
C
2
1
2
Ci= iRi
Ci= iRi
C
Ri (°C/W)
i (sec)
0.960
0.00044
0.680
0.00585
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRFZ44VZS
15V
DRIVER
L
VDS
+
V
- DD
IAS
20V
tp
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
300
D.U.T
RG
ID
3.8A
5.0A
BOTTOM 34A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250µA
3.0
2.0
1.0
-75
-50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRFZ44VZS
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs. Pulse width
EAR , Avalanche Energy (mJ)
80
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 34A
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy vs. Temperature
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AUIRFZ44VZS
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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AUIRFZ44VZS
D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2-Pak (TO-263AB) Part Marking Information
Part Number
AUIRFZ44VZS
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
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AUIRFZ44VZS
D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
10
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
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AUIRFZ44VZS
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
MSL1
Class M4 (+/- 425V)†
AEC-Q101-002
Class H1B (+/- 1000V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
Comments
10/27/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
10/13/2017
Corrected typo error on part marking on page 9.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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