AUIRFZ48N

AUTOMOTIVE GRADE PD - 97732 AUIRFZ48N HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* D G S V(BR)DSS 55V RDS(on) typ. max ID 11m 14m 69A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRFZ48N G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 69 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 49 IDM Pulsed Drain Current 270 PD @TC = 25°C Power Dissipation 160 W Linear Derating Factor 1.1 W/°C Gate-to-Source Voltage ± 20 V 265 mJ VGS c EAS Single Pulse Avalanche Energy (Thermally Limited) EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range c g Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw h d 290 See Fig.12a, 12b, 15, 16 i mJ °C 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. Max. ––– 0.95 RJC Junction-to-Case RCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 www.irf.com A -55 to + 175 Thermal Resistance Parameter A Units °C/W 1 10/3/11 AUIRFZ48N Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 ––– ––– 2.0 24 ––– ––– ––– ––– ––– 0.054 11 ––– ––– ––– ––– ––– ––– ––– ––– 14 4.0 ––– 25 250 100 -100 Conditions V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1.0mA m VGS = 10V, ID = 40A V VDS = VGS, ID = 100μA S VDS = 10V, ID = 40A μA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ––– ––– ––– ––– ––– ––– ––– ––– 42 9.0 17 12 62 37 37 4.5 63 ––– ––– ––– ––– ––– ––– ––– nC ns nH LS Internal Source Inductance Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– ––– 7.5 1900 470 120 2180 340 610 ––– ––– ––– ––– ––– ––– ––– Conditions ID = 40A VDS = 44V VGS = 10V VDD = 28V ID = 40A e RG = 7.6 VGS = 10V e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V pF D G S ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.24mH RG = 50, IAS = 40A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width  1.0ms; duty cycle  2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Min. Typ. Max. Units ––– ––– 69 A ––– ––– 270 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 40A, VGS = 0V TJ = 25°C, IF = 40A, VDD = 28V e ––– ––– 1.3 V ––– 71 110 ns ––– 230 345 nC di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) e … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population, starting TJ = 25°C, L = 0.24mH, R G = 50, IAS = 40A, VGS =10V. ‡ R is measured at TJ approximately 90°C. www.irf.com AUIRFZ48N Qualification Information † Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 N/A ††† Class M3 (+/- 400V) AEC-Q101-002 ESD Human Body Model Class H1C (+/- 1500V)††† AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V)††† AEC-Q101-005 RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage. www.irf.com 3 AUIRFZ48N 1000 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 100 BOTTOM VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 5.0V 10 BOTTOM 5.0V 10 60μs PULSE WIDTH 60μs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 50 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 T J = 175°C 100 10 T J = 25°C 1 VDS = 25V 60μs PULSE WIDTH 0.1 T J = 25°C 40 T J = 175°C 30 20 10 V DS = 10V 380μs PULSE WIDTH 0 0 2 4 6 8 10 12 14 16 0 20 40 60 80 ID,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ISD, Reverse Drain Current (A) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 175°C 100 T J = 25°C 10 VGS = 0V 1.0 ID = 67A VGS = 10V 2.0 1.5 1.0 0.5 0.2 0.6 1.0 1.4 1.8 2.2 VSD, Source-to-Drain Voltage (V) Fig 5. Typical Source-Drain Diode Forward Voltage 4 1 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature www.irf.com AUIRFZ48N 100000 VGS, Gate-to-Source Voltage (V) ID= 40A C oss = C ds + C gd 10000 C, Capacitance (pF) 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Ciss Coss 1000 Crss 100 10 12.0 VDS= 44V VDS= 28V 10.0 VDS= 11V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 70 60 100μsec 1msec 10 ID, Drain Current (A) ID, Drain-to-Source Current (A) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10msec 1 10 15 20 25 30 35 40 45 50 QG, Total Gate Charge (nC) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 1000 5 DC Tc = 25°C Tj = 175°C Single Pulse 50 40 30 20 10 0.1 0 0.1 1 10 100 25 VDS, Drain-toSource Voltage (V) 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 AUIRFZ48N 4.5 ID TOP 7.2A 14A BOTTOM 40A 700 600 VGS(th) , Gate threshold Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) 800 500 400 300 200 100 4.0 3.5 3.0 ID = 100μA ID = 1.0mA 2.5 ID = 1.0A 2.0 1.5 0 25 50 75 100 125 150 -75 -50 -25 175 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Starting T J , Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. Drain Current Fig 13. Threshold Voltage vs. Temperature 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 40A 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 6 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav www.irf.com AUIRFZ48N Driver Gate Drive D.U.T ƒ - ‚ - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations  Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + D= Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple  5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01 tp I AS Fig 17a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. Fig 17b. Unclamped Inductive Waveforms Id Vds Vgs 50K .2F 12V .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit V DS V GS RG Qgodr Fig 18b. Gate Charge Waveform RD VDS 90% D.U.T. + -V DD 10V Pulse Width µs Duty Factor  Fig 19a. Switching Time Test Circuit www.irf.com Qgd 10% VGS td(on) tr t d(off) tf Fig 19b. Switching Time Waveforms 7 AUIRFZ48N TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRFZ48N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com AUIRFZ48N Ordering Information Base part number Package Type Standard Pack AUIRFZ48N TO-220 Form Tube www.irf.com Complete Part Number Quantity 50 AUIRFZ48N 9 AUIRFZ48N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 10 www.irf.com