AUIRG4PH50S
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR
C
VCES = 1200V
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *
IC = 81A@ TC = 100°C
G
VCE(on) typ. = 1.47V@ 33A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
TO-247AC
G
Gate
Base part number
Package Type
AUIRG4PH50S
TO-247AC
C
Collector
Standard Pack
Form
Quantity
Tube
25
E
Emitter
Complete Part Number
AUIRG4PH50S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
d
Max.
Units
1200
141
V
g
81
99
99
±20
c
A
V
±30
543
217
W
-55 to +150
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
°C
300
10 lbf·in (1.1N·m)
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
Thermal Resistance Junction-to-Case (IGBT)
f
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.23
–––
–––
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
Min.
1200
Typ.
—
Max.
—
—
1.2
—
—
1.47
1.7
—
1.55
—
3.0
—
6.0
Units
Conditions
V
VGE = 0V, IC = 250μA
e
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
V
V
ΔVGE(th)/ΔTJ
Threshold Voltage temp. coefficient
—
-11
—
gfe
Forward Transconductance
—
30
—
ICES
Collector-to-Emitter Leakage Current
—
—
250
—
—
1000
IGES
Gate-to-Emitter Leakage Current
—
—
±100
nA
Min.
Typ.
Max.
Units
e
IC = 33A, VGE = 15V, TJ = 25°C
IC = 33A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 250μA
mV/°C VCE = VGE, IC = 250μA (25°C - 150°C)
S
μA
VCE = 50V, IC = 33A, PW = 20μs
VGE = 0V, VCE = 1200V, TJ = 25°C
VGE = 0V, VCE = 1200V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
—
151
227
Qge
Gate-to-Emitter Charge (turn-on)
—
26
39
Qgc
Gate-to-Collector Charge (turn-on)
—
62
93
Eoff
Turn-Off Switching Loss
—
15
16
Conditions
IC = 33A
nC
VGE = 15V
VCC = 600V
IC = 33A, VCC = 600V, VGE = 15V
mJ
RG = 5Ω, L = 400μH, TJ = 25°C
Energy losses include tail
td(off)
Turn-Off delay time
—
485
616
tf
Fall time
—
1193
1371
Eoff
Turn-Off Switching Loss
—
29
—
td(off)
Turn-Off delay time
—
689
—
tf
Fall time
—
2462
—
ns
IC = 33A, VCC = 600V, VGE = 15V
RG = 5Ω, L = 400μH, TJ = 25°C
IC = 33A, VCC = 600V, VGE = 15V
mJ
RG = 5Ω, L = 400μH, TJ = 150°C
Energy losses include tail
Cies
Input Capacitance
—
3804
—
Coes
Output Capacitance
—
161
—
Cres
Reverse Transfer Capacitance
—
31
—
RBSOA
Reverse Bias Safe Operating Area
ns
IC = 33A, VCC = 600V, VGE = 15V
RG = 5Ω, L = 400μH, TJ = 150°C
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 99A
FULL SQUARE
VCC
99S9
Rg = 5Ω, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 400μH, RG = 50Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising
from heating of the device leads may occur with some lead mounting arrangements.
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AUIRG4PH50S
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive
level.
TO-247AC
N/A
Class M3
AEC-Q101-002
Human Body Model
ESD
Class H2
AEC-Q101-001
Charged Device Model
Class C4
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
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AUIRG4PH50S
160
600
140
500
120
400
Ptot (W)
IC (A)
100
80
60
300
200
40
100
20
0
25
50
75
100
125
0
150
25
50
75
TC (°C)
1000
100
10μsec
10
IC (A)
100μsec
1msec
1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
100
125
150
1000
Fig. 2 - Power Dissipation vs. Case
Temperature
VGE(th) , Gate Threshold Voltage (Normalized)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
0.1
100
TC (°C)
5.0
IC = 1mA
4.5
4.0
3.5
3.0
25
10000
50
75
100
125
150
T J , Temperature (°C)
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
100
1000
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
80
IC (A)
ICE (A)
100
60
40
10
20
0
1
10
100
1000
10000
0
2
VCE (V)
Fig. 5- Reverse Bias SOA
TJ = 150°C; VGE = 20V
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4
6
8
10
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20μs
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AUIRG4PH50S
100
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
ICE (A)
60
80
60
ICE (A)
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
V CE (V)
8
10
V CE (V)
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20μs
8
8
7
7
6
6
ICE = 17A
ICE = 33A
ICE = 66A
4
ICE = 17A
ICE = 33A
ICE = 66A
5
VCE (V)
5
VCE (V)
6
3
4
3
2
2
1
1
0
0
5
10
15
20
5
10
VGE (V)
15
20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
8
100
7
80
6
VCE (V)
ICE (A)
ICE = 17A
ICE = 33A
5
ICE = 66A
4
3
60
TJ = 25°C
TJ = 150°C
40
2
20
1
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
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20
0
4
5
6
7
8
9
10
11
V GE (V)
Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 20μs
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AUIRG4PH50S
50
10000
45
35
tF
Swiching Time (ns)
Energy (mJ)
40
EOFF
30
1000
25
20
tdOFF
15
10
100
0
10
20
30
40
50
60
70
0
20
40
80
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 400μH; VCE = 600V, RG = 5Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 400μH; VCE = 600V, RG = 5Ω; VGE = 15V
10000
32
Swiching Time (ns)
30
Energy (mJ)
60
EOFF
28
tF
1000
tdOFF
26
100
24
0
20
40
60
80
0
100
Rg (Ω)
60
80
100
Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V
10000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
1000
Capacitance (pF)
40
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V
100
Coes
10
Cres
1
V CES = 600V
14
V CES = 400V
12
10
8
6
4
2
0
0
100
200
300
400
500
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
20
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600
0
20
40
60
80
100 120 140 160
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 33A; L = 2.0mH
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AUIRG4PH50S
Thermal Response ( ZthJC )
1
0.1
D = 0.50
0.20
0.01
0.10
0.05
0.02
0.01
τJ
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
τi (sec)
0.0011
0.000003
0.0518
0.000223
0.1300
0.001791
0.0472
0.008118
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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AUIRG4PH50S
L
L
80 V
VCC
DUT
0
+
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
C force
diode clamp /
DUT
100K
L
D1
22K
C sense
DUT /
DRIVER
DUT
G force
VCC
0.0075μF
Rg
E sense
E force
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
700
70
tf
600
60
500
50
40
90% ICE
ICE (A)
VCE (V)
400
300
30
200
20
5% VCE
100
10
10% ICE
0
0
Eoff Loss
-100
-10
-2
0
2
4
6
time(μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
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AUIRG4PH50S
TO-247AC Package Outline
Dimensions are shown in milimeters (inches)
TO-247AC Part Marking Information
Part Number
AUG4PH50S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRG4PH50S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of
third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any
such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are
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Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
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regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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AUIRG4PH50S
Revision History
Date
7/8/2014
7/11/2014
1/9/2015
3/2/2015
11
Comments
• Updated datasheet based on new template and retest data.
• Removed Ic Nominal current on page 1.
• Updated typo on switch time test condition from "25C" to "150C" on page 2.
• Corrected typo on V(BR)CES test condition from "100μA" to "250μA" on page 2.
• Corrected typo on VGE(TH) test condition from "1mA" to "250μA" on page 2.
• Removed ICES = 2uA @ VCE = 10V on page 2.
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