AUIRG4PH50S

AUIRG4PH50S AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * IC = 81A@ TC = 100°C G VCE(on) typ. = 1.47V@ 33A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions TO-247AC G Gate Base part number Package Type AUIRG4PH50S TO-247AC C Collector Standard Pack Form Quantity Tube 25 E Emitter Complete Part Number AUIRG4PH50S Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range d Max. Units 1200 141 V g 81 99 99 ±20 c A V ±30 543 217 W -55 to +150 Soldering Temperature, for 10 sec. (1.6mm from case) Mounting Torque, 6-32 or M3 Screw °C 300 10 lbf·in (1.1N·m) Thermal Resistance RθJC (IGBT) RθCS RθJA Parameter Thermal Resistance Junction-to-Case (IGBT) f Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient Min. ––– ––– ––– Typ. ––– 0.24 40 Max. 0.23 ––– ––– Units °C/W *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage Min. 1200 Typ. — Max. — — 1.2 — — 1.47 1.7 — 1.55 — 3.0 — 6.0 Units Conditions V VGE = 0V, IC = 250μA e V/°C VGE = 0V, IC = 1mA (25°C-150°C) V V ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -11 — gfe Forward Transconductance — 30 — ICES Collector-to-Emitter Leakage Current — — 250 — — 1000 IGES Gate-to-Emitter Leakage Current — — ±100 nA Min. Typ. Max. Units e IC = 33A, VGE = 15V, TJ = 25°C IC = 33A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 250μA mV/°C VCE = VGE, IC = 250μA (25°C - 150°C) S μA VCE = 50V, IC = 33A, PW = 20μs VGE = 0V, VCE = 1200V, TJ = 25°C VGE = 0V, VCE = 1200V, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) — 151 227 Qge Gate-to-Emitter Charge (turn-on) — 26 39 Qgc Gate-to-Collector Charge (turn-on) — 62 93 Eoff Turn-Off Switching Loss — 15 16 Conditions IC = 33A nC VGE = 15V VCC = 600V IC = 33A, VCC = 600V, VGE = 15V mJ RG = 5Ω, L = 400μH, TJ = 25°C Energy losses include tail td(off) Turn-Off delay time — 485 616 tf Fall time — 1193 1371 Eoff Turn-Off Switching Loss — 29 — td(off) Turn-Off delay time — 689 — tf Fall time — 2462 — ns IC = 33A, VCC = 600V, VGE = 15V RG = 5Ω, L = 400μH, TJ = 25°C IC = 33A, VCC = 600V, VGE = 15V mJ RG = 5Ω, L = 400μH, TJ = 150°C Energy losses include tail Cies Input Capacitance — 3804 — Coes Output Capacitance — 161 — Cres Reverse Transfer Capacitance — 31 — RBSOA Reverse Bias Safe Operating Area ns IC = 33A, VCC = 600V, VGE = 15V RG = 5Ω, L = 400μH, TJ = 150°C VGE = 0V pF VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 99A FULL SQUARE VCC 99S”9 Rg = 5Ω, VGE = +20V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 400μH, RG = 50Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ of approximately 90°C. … Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S † Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model †† This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247AC N/A Class M3 AEC-Q101-002 Human Body Model ESD Class H2 AEC-Q101-001 Charged Device Model Class C4 AEC-Q101-005 RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Highest passing voltage. 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S 160 600 140 500 120 400 Ptot (W) IC (A) 100 80 60 300 200 40 100 20 0 25 50 75 100 125 0 150 25 50 75 TC (°C) 1000 100 10μsec 10 IC (A) 100μsec 1msec 1 DC Tc = 25°C Tj = 150°C Single Pulse 0.01 1 10 100 125 150 1000 Fig. 2 - Power Dissipation vs. Case Temperature VGE(th) , Gate Threshold Voltage (Normalized) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 0.1 100 TC (°C) 5.0 IC = 1mA 4.5 4.0 3.5 3.0 25 10000 50 75 100 125 150 T J , Temperature (°C) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 150°C; VGE =15V Fig. 4 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 100 1000 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 80 IC (A) ICE (A) 100 60 40 10 20 0 1 10 100 1000 10000 0 2 VCE (V) Fig. 5- Reverse Bias SOA TJ = 150°C; VGE = 20V 4 www.irf.com © 2015 International Rectifier 4 6 8 10 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20μs Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S 100 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V ICE (A) 60 80 60 ICE (A) 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 40 40 20 20 0 0 0 2 4 6 8 10 0 2 4 V CE (V) 8 10 V CE (V) Fig. 8 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20μs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20μs 8 8 7 7 6 6 ICE = 17A ICE = 33A ICE = 66A 4 ICE = 17A ICE = 33A ICE = 66A 5 VCE (V) 5 VCE (V) 6 3 4 3 2 2 1 1 0 0 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 8 100 7 80 6 VCE (V) ICE (A) ICE = 17A ICE = 33A 5 ICE = 66A 4 3 60 TJ = 25°C TJ = 150°C 40 2 20 1 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C 5 www.irf.com © 2015 International Rectifier 20 0 4 5 6 7 8 9 10 11 V GE (V) Fig. 12- Typ. Transfer Characteristics VCE = 50V; tp = 20μs Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S 50 10000 45 35 tF Swiching Time (ns) Energy (mJ) 40 EOFF 30 1000 25 20 tdOFF 15 10 100 0 10 20 30 40 50 60 70 0 20 40 80 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 400μH; VCE = 600V, RG = 5Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 400μH; VCE = 600V, RG = 5Ω; VGE = 15V 10000 32 Swiching Time (ns) 30 Energy (mJ) 60 EOFF 28 tF 1000 tdOFF 26 100 24 0 20 40 60 80 0 100 Rg (Ω) 60 80 100 Fig. 16- Typ. Switching Time vs. RG TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies 1000 Capacitance (pF) 40 RG (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V 100 Coes 10 Cres 1 V CES = 600V 14 V CES = 400V 12 10 8 6 4 2 0 0 100 200 300 400 500 VCE (V) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 20 www.irf.com © 2015 International Rectifier 600 0 20 40 60 80 100 120 140 160 Q G, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 33A; L = 2.0mH Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S Thermal Response ( ZthJC ) 1 0.1 D = 0.50 0.20 0.01 0.10 0.05 0.02 0.01 τJ 0.001 0.0001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri τi (sec) 0.0011 0.000003 0.0518 0.000223 0.1300 0.001791 0.0472 0.008118 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S L L 80 V VCC DUT 0 + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit C force diode clamp / DUT 100K L D1 22K C sense DUT / DRIVER DUT G force VCC 0.0075μF Rg E sense E force Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit 700 70 tf 600 60 500 50 40 90% ICE ICE (A) VCE (V) 400 300 30 200 20 5% VCE 100 10 10% ICE 0 0 Eoff Loss -100 -10 -2 0 2 4 6 time(μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S TO-247AC Package Outline Dimensions are shown in milimeters (inches) TO-247AC Part Marking Information Part Number AUG4PH50S YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015 AUIRG4PH50S Revision History Date 7/8/2014 7/11/2014 1/9/2015 3/2/2015 11 Comments • Updated datasheet based on new template and retest data. • Removed Ic Nominal current on page 1. • Updated typo on switch time test condition from "25C" to "150C" on page 2. • Corrected typo on V(BR)CES test condition from "100μA" to "250μA" on page 2. • Corrected typo on VGE(TH) test condition from "1mA" to "250μA" on page 2. • Removed ICES = 2uA @ VCE = 10V on page 2. www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015