AUIRGB4062D1
AUIRGS4062D1
AUIRGSL4062D1
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5µs short circuit SOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
VCES = 600V
C
IC(Nominal) = 24A
tSC 5µs, TJ(max) = 175°C
G
VCE(on) typ. = 1.57V
E
n-channel
C
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
C
C
C
G
E
AUIRGB4062D1
TO-220AB
C
G
E
AUIRGS4062D1
D2Pak
G
Gate
C
Collector
G
C
E
AUIRGSL4062D1
TO-262Pak
E
Emitter
Applications
Air Conditioning Compressor
Base Part Number
Package Type
AUIRGB4062D1
AUIRGSL4062D1
TO-220
TO-262
AUIRGS4062D1
D2 Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Tape and Reel Right
800
Orderable Part Number
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
AUIRGS4062D1TRL
AUIRGS4062D1TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VCES
IC @ TC = 25°C
IC @ TC = 100°C
IC (Nominal)
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current VGE =15V
Clamped Inductive Load Current VGE =20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
59
39
24
72
96
59
39
96
±20
±30
246
123
-55 to +175
Units
V
A
V
W
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
RJC (IGBT)
Parameter
Thermal Resistance Junction-to-Case (IGBT)
Min.
–––
Typ.
–––
Max.
0.61
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
–––
–––
0.50
62
1.2
–––
–––
Units
°C/W
* Qualification standards can be found at www.infineon.com
1
2017-08-31
AUIRGB/S/SL4062D1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Parameter
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
VGE(th)
VGE(th)/TJ Threshold Voltage temp. coefficient
Forward Transconductance
gfe
Collector-to-Emitter Leakage Current
ICES
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
—
0.3
1.57
1.87
1.94
—
-17
12
1.0
3.5
1.57
1.40
1.47
—
Max.
Units
—
V
VGE = 0V, IC = 100µA
—
V/°C VGE = 0V, IC = 10mA (25°C-175°C)
1.77
IC = 24A, VGE = 15V, TJ = 25°C
—
IC = 24A, VGE = 15V, TJ = 150°C
V
—
IC = 24A, VGE = 15V, TJ = 175°C
6.5
V
VCE = VGE, IC = 700µA
—
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
—
S
VCE = 50V, IC = 24A,PW = 20µs
25
µA VGE = 0V, VCE = 600V
—
mA VGE = 0V, VCE = 600V,TJ = 175°C
—
IF = 24A
—
IF = 19A
V
—
IF = 24A, TJ = 175°C
±100
nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Etotal
td(on)
Conditions
Min.
—
—
—
—
—
Typ.
51
14
21
532
311
Max.
77
21
32
754
526
Total Switching Loss
Turn-On delay time
—
—
843
19
1280
36
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
24
90
23
726
549
1275
12
23
92
84
1487
118
44
41
109
40
—
—
—
—
—
—
—
—
—
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Irr
Peak Reverse Recovery Current
Units
nC
Conditions
IC = 24A
VGE = 15V
VCC = 400V
J
IC = 24A, VCC = 400V,
VGE = +15V,RG = 10,
ns
L = 210H, TJ = 25°C
Energy losses include tail & diode
reverse recovery
J
IC = 24A, VCC = 400V,
ns
pF
VGE = +15V,RG = 10,
L = 210H, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 96A
VCC = 480V, Vp ≤ 600V
5
—
—
s
—
—
—
773
—
102
32
—
—
J
ns
Rg = 10, VGE = +20V to 0V
VCC = 400V, Vp ≤ 600V
Rg = 10, VGE = +15V to 0V
TJ = 175°C
VCC = 400V,IF = 24A,VGE = 15V,
A
RG = 10, L = 210H
Notes:
VCC = 80% (VCES), VGE = 20V, L = 210µH, RG = 50.
Pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
Maximum limits are based on statistical sample size characterization.
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2017-08-31
AUIRGB/S/SL4062D1
70
300
60
250
200
40
Ptot (W)
IC (A)
50
30
150
100
20
50
10
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs.
Case Temperature
1000
100
10µsec
100µsec
100
10
IC (A)
IC (A)
1msec
DC
1
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
1
10
100
10
1000
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
100
100
80
70
ICE (A)
60
VGE =
VGE =
VGE =
VGE =
VGE =
VGE =
VGE =
VGE =
90
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
80
ICE (A)
1000
VCE (V)
40
60
50
18V
15V
12V
11V
10V
9.0V
8.0V
7.0V
40
30
20
20
10
0
0
0
1
2
3
4
5
6
7
8
9
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
3
10
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
2017-08-31
AUIRGB/S/SL4062D1
100
100
ICE (A)
80
60
18V
15V
12V
11V
10V
9.0V
8.0V
7.0V
80
T J = -40°C
T J = 25°C
T J =175°C
60
IF (A)
VGE =
VGE =
VGE =
VGE =
VGE =
VGE =
VGE =
VGE =
40
40
20
20
0
0
1
2
3
4
5
6
7
8
9
0
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF (V)
VCE (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
8
8
6
VCE (V)
VCE (V)
6
ICE = 12A
ICE = 24A
ICE = 48A
4
ICE = 12A
ICE = 24A
ICE = 48A
4
2
2
0
0
5
5
10
15
10
20
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
100
IC, Collector-to-Emitter Current (A)
ICE = 12A
ICE = 24A
ICE = 48A
6
VCE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
8
4
2
T J = 25°C
80
T J = 175°C
60
40
20
0
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
15
VGE (V)
20
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
2017-08-31
AUIRGB/S/SL4062D1
1000
2500
2000
Swiching Time (ns)
tdOFF
Energy (µJ)
EON
1500
1000
100
tF
tR
tdON
10
EOFF
500
0
1
0
10
20
30
40
50
0
10
20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
40
50
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
1000
2000
1600
tdOFF
EON
Swiching Time (ns)
Energy (µJ)
30
IC (A)
1200
EOFF
800
100
tF
tR
10
tdON
400
0
0
20
40
60
80
100
1
120
0
20
40
60
80
100
RG ()
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 24A; VGE = 15V
35
35
30
RG = 10
30
RG = 22
25
IRR (A)
IRR (A)
25
20
RG = 47
15
RG = 100
15
10
5
10
15
20
25
30
35
40
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
5
20
45
50
10
0
20
40
60
80
100
RG (
Fig. 18 Typ. Diode IRR vs. RG
TJ = 175°C
2017-08-31
AUIRGB/S/SL4062D1
6000
35
QRR (nC)
30
IRR (A)
48A
5000
25
4000
3000
24A
20
2000
12A
1000
15
0
200
400
600
800
1000
200
1200
400
600
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Time (µs)
RG = 22
16
250
12
200
Isc
Tsc
8
150
500
4
100
0
0
1000
RG = 47
10
20
30
40
50
8
50
Current (A)
Energy (µJ)
RG = 10
RG = 100
10
12
14
16
18
VGE (V)
IF (A)
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
16
VGE, Gate-to-Emitter Voltage (V)
10000
Cies
Capacitance (pF)
1200
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
2000
1000
Coes
100
Cres
V CES = 400V
14
V CES = 300V
12
10
8
6
4
2
0
10
0
100
200
300
400
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
1000
diF /dt (A/µs)
diF /dt (A/µs)
1500
800
500
0
10
20
30
40
50
60
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 585µH
2017-08-31
AUIRGB/S/SL4062D1
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
J
0.05
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
4
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
1E-005
Ri (°C/W)
i (sec)
0.0347
0.00003
0.1519
0.00007
0.2531
0.00209
0.1721
0.01166
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
J
SINGLE PULSE
( THERMAL RESPONSE )
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
3
4
4
Ci= iRi
Ci= iRi
C
Ri (°C/W)
i (sec)
0.0296
0.00003
0.4307
0.00028
0.4840
0.00353
0.2576
0.01971
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
2017-08-31
AUIRGB/S/SL4062D1
L
80 V +
-
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
8
2017-08-31
AUIRGB/S/SL4062D1
60
600
60
600
tr
500
400
40
400
300
30
300
90% ICE
200
100
20
10
5% VCE
Eoff Loss
-0.05
0.2
-10
0.45
20
100
10
10% ICE
5% VCE
0
0
Eon Loss
-100
-0.3
0.7
-0.05
0.2
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
-10
0.7
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
500
500
35
QRR
28
VCE
400
400
21
tRR
14
300
-7
Peak
IRR
Ice (A)
Vce (V)
0
300
ICE
7
-14
0.45
time (µs)
time(µs)
IF (A)
30
90% ICE
200
0
-100
40
TEST
CURRENT
10% ICE
0
-0.3
50
ICE (A)
50
VCE (V)
500
ICE (A)
VCE (V)
tf
200
200
100
100
-21
-35
-0.25
0
0
-28
0.00
0.25
0.50
-100
-100
-2
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
9
0
2
4
6
8
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
2017-08-31
AUIRGB/S/SL4062D1
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRGB4062D1
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
TO-220AC package is not recommended for Surface Mount Application.
10
2017-08-31
AUIRGB/S/SL4062D1
D2 Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D2 Pak (TO-263AB) Part Marking Information
Part Number
AUIRGS4062D1
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
11
2017-08-31
AUIRGB/S/SL4062D1
TO-262 Package Outline
(Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUIRGSL4062D1
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
12
2017-08-31
AUIRGB/S/SL4062D1
D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
13
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
2017-08-31
AUIRGB/S/SL4062D1
Qualification Information
Automotive
(per AEC-Q101)
This part number(s) passed Automotive qualification. Infineon’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
3L-TO-220
Moisture Sensitivity Level
N/A
3L-TO-262
3L-D2 PAK
Machine Model
Human Body Model
ESD
Charged Device Model
MSL1
Class M4(+/‐ 700V)†
AEC-Q101-002
Class H1C(+/‐ 2000V)†
AEC-Q101-001
Class C5 (+/‐ 2000V)†
AEC-Q101-005
Yes
RoHS Compliant
†
Highest passing voltage.
Revision History
Date
8/31/2017
Comments
Updated datasheet with corporate template
Corrected part marking on pages 10,11, 12
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
14
2017-08-31
