AUIRGDC0250

AUTOMOTIVE GRADE   Features         AUIRGDC0250   Low VCE (on) Planar IGBT Technology C VCES = 1200V Low Switching Losses Square RBSOA 100% of the Parts Tested for ILM Positive VCE (on) Temperature Coefficient Reflow Capable per JDSD22-A113 Lead-Free, RoHS Compliant Automotive Qualified * IC = 81A @ TC = 100°C G VCE(on) typ. = 1.47V @ 33A E n-channel   Benefits Device optimized for soft switching applications  High Efficiency due to Low VCE(on), low switching losses  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation  Low EMI  Super-TO-220 AUIRGDC0250 Application  G Gate PTC Heater  Relay Replacement Base Part Number   Package Type   AUIRGDC0250 Super-TO-220 Standard Pack Form Quantity Tube 50 C Collector E Emitter Orderable Part Number AUIRGDC0250 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V  Clamped Inductive Load Current, VGE = 20V  Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Max. 1200 141 81 99 99 ±20 ±30 543 217 -55 to +150 VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE Units V A V W °C   Soldering Temperature, for 10 sec. (Through Hole Mounting) 300 (0.063 in. (1.6mm) from case) Thermal Resistance RJC (IGBT) RCS RJA Parameter Thermal Resistance Junction-to-Case (each IGBT)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Typ. ––– 0.50 ––– Max. 0.23 ––– 62 Units °C/W   * Qualification standards can be found at www.infineon.com  1 V 2.6 2019-04-18 AUIRGDC0250   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 1200 — — V V/°C — 1.2 — — — 3.0 1.47 1.56 — 1.8 — 6.0 VGE(th)/TJ Threshold Voltage temp. coefficient — -15 — gfe Forward Transconductance — 30 — ICES Collector-to-Emitter Leakage Current — — 250 — — 1000 — — ±100 VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage IGES Gate-to-Emitter Leakage Current   Units Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Qg Total Gate Charge (turn-on) — 151 227 Gate-to-Emitter Charge (turn-on) — 26 39 Qge Gate-to-Collector Charge (turn-on) — 62 93 Qgc Eoff Turn-Off Switching Loss — 15 16 Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1mA (25°C-150°C) IC = 33A, VGE = 15V, TJ = 25°C IC = 33A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 250µA V V mV/°C VCE = VGE, IC = 250µA (25°C-150°C) S VCE = 50V, IC = 33A,PW = 20µS VGE = 0V, VCE = 1200V, TJ = 25°C µA   VGE = 0V, VCE = 1200V,TJ = 150°C nA VGE = ±20V   Units nC mJ   Conditions IC = 33A VGE = 15V VCC = 600V IC = 33A, VCC = 600V, VGE = 15V td(off) Turn-Off delay time — 485 616 tf Fall time — 1193 1371 Eoff Turn-Off Switching Loss — 29 — td(off) Turn-Off delay time — 689 — tf Fall time — 2462 — Cies Input Capacitance — 3804 — Coes Output Capacitance — 161 — pF   VCC = 30V Cres Reverse Transfer Capacitance — 31 — f = 1.0Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE ns   mJ   ns   RG = 5, L = 400µH, TJ = 25°C Energy losses include tail IC = 33A, VCC = 600V, VGE = 15V RG = 5, L = 400µH, TJ = 150°C Energy losses include tail VGE = 0V       TJ = 150°C, IC = 99A VCC = 960V, Vp ≤ 1200V Rg = 5, VGE = +20V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 5.  Pulse width limited by max. junction temperature.  R is measured at TJ approximately 90°C.  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 V 2.6 2019-04-18 AUIRGDC0250   160 600 140 500 120 400 Ptot (W) IC (A) 100 80 60 300 200 40 100 20 0 25 50 75 100 125 0 150 25 50 75 T C (°C) 100 10µsec 10 IC (A) 100µsec 1msec 1 DC Tc = 25°C Tj = 150°C Single Pulse 0.01 10 100 150 Fig. 2 - Power Dissipation vs. Case Temperature 1000 VGE(th) , Gate Threshold Voltage (Normalized) 1000 1 125 TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 0.1 100 5.0 IC = 1mA 4.5 4.0 3.5 3.0 25 10000 50 75 100 125 150 T J , Temperature (°C) VCE (V) Fig. 4 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature Fig. 3 - Forward SOA TC = 25°C, TJ  150°C; VGE =15V 100 1000 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 80 IC (A) ICE (A) 100 60 40 10 20 0 1 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 150°C; VGE = 20V 3 10000 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs V 2.6 2019-04-18 AUIRGDC0250   100 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 60 80 60 ICE (A) ICE (A) 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 40 40 20 20 0 0 0 2 4 6 8 0 10 2 4 8 10 VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp =20µs Fig. 8 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs 8 8 7 7 6 6 VCE (V) ICE = 66A 4 ICE = 17A ICE = 33A 5 ICE = 17A ICE = 33A 5 VCE (V) 6 ICE = 66A 4 3 3 2 2 1 1 0 0 5 10 15 5 20 10 15 20 VGE (V) VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 100 8 7 80 6 ICE = 17A ICE = 33A ICE = 66A 4 ICE (A) VCE (V) 5 3 2 60 T J = 25°C T J = 150°C 40 20 1 0 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C 4 20 4 5 6 7 8 9 10 11 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs V 2.6 2019-04-18 AUIRGDC0250   50 10000 45 35 tF Swiching Time (ns) Energy (mJ) 40 EOFF 30 1000 25 20 tdOFF 15 10 0 10 20 30 40 50 60 100 70 0 20 40 IC (A) 32 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V 10000 tF Swiching Time (ns) Energy (mJ) 30 EOFF 28 26 24 0 20 40 60 80 100 1000 tdOFF 100 0 20 40 60 80 100 RG () Rg ( ) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V Fig. 16 - Typ. Energy Loss vs. RG TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V 16 10000 VGE, Gate-to-Emitter Voltage (V) Cies 1000 Capacitance (pF) 80 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V 100 Coes 10 Cres V CES = 600V 14 V CES = 400V 12 10 8 6 4 2 0 1 0 100 200 300 400 500 600 VCE (V) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 5 60 0 20 40 60 80 100 120 140 160 Q G, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 33A; L = 2.0mH V 2.6 2019-04-18 AUIRGDC0250   Thermal Response ( Z thJC ) 1 0.1 0.01 0.001 0.0001 1E-006 D = 0.50 0.20 0.10 0.05 0.02 0.01 Ri (°C/W) J SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi C I (sec) 0.0015 0.000003 0.0365 0.000118 0.1356 0.001438 0.0554 0.006412 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 6 V 2.6 2019-04-18 AUIRGDC0250   L L VCC DUT 0 + - 80 V DUT VCC Rg 1K RBSOA Circuit Gate Charge Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L DUT / DRIVER VCC Rg Switching Loss Fig.C.T.3 - Switching Loss Circuit 700 70 tf 600 60 500 50 40 90% ICE ICE (A) VCE (V) 400 30 300 20 200 5% VCE 100 10 10% ICE 0 0 Eoff Loss -10 -100 -2 0 2 4 6 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3   7 V 2.6 AUIRGDC0250   Super-TO-220 Package Outline Dimensions are shown in millimeters (inches) Super-TO-220 Part Marking Information 8 V 2.6 2019-04-18 AUIRGDC0250   Qualification Information Automotive (per AEC-Q101) Comments: This part number (s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level 3L– Super TO-220 Moisture Sensitivity Level   MSL1 † Machine Model Human Body Model ESD   Charged Device Model RoHS Compliant † Class M4 (+/- 800V) AEC-Q101-002 Class H3A†(+/- 6000V) AEC-Q101-001 Class C5†(+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Revision Date 2.0 9/2/2014  Final Datasheet 2.1 12/1/2014  Updated with V(BR)CES and VGE(th) conditions 2.2 3/2/2015  Updated with minor changes 2.3 8/31/2017  Updated with Infineon logo 2.4 03/01/2018  Updated with qualification level 2.5 11/06/2018  Updated maximum VCE(on) 2.6 4/18/2019  Updated typical Vce(on) value @ 150°C 9 Subjects (major changes since last revision) V 2.6 2019-04-18 AUIRGDC0250   Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2018 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 V 2.6 2019-04-18