AUIRGP66524D0
AUIRGF66524D0
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
COOLiRIGBT ™
VCES = 600V
C
INOMINAL = 24A
Tsc 6µs, TJ(MAX) = 175°C
VCE(ON) typ. = 1.60V
E
n-channel
Applications
Air Conditioning Compressor
Auxiliary Motor Drive
G
Gate
Features
Low VCE(on) Trench IGBT Technology
Low Switching Losses
6µs SCSOA Guaranteed
Square RBSOA and 100% Clamp IL Tested
Positive VCE(on) Temperature Coefficient
Ultra Fast Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant, Automotive Qualified *
Base Part Number
Package Type
AUIRGP66524D0
AUIRGF66524D0
GC
G
TO-247AC
TO-247AD
E
G
CE
TO-247AC
TO-247AD
AUIRGP66524D0
AUIRGF66524D0
C
Collector
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies
Enables Short Circuit Protection Scheme
Rugged Hard Switching Operation
Enables Easy Paralleling of Devices
Better Efficiency and Improved EMI Performance
Environmentally Friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
AUIRGP66524D0
AUIRGF66524D0
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
INominal
Nominal Collector Current
24
IC @ TC = 25°C
Continuous Collector Current
60
IC @ TC = 100°C
Continuous Collector Current
40
A
ICM
Pulse Collector Current, VGE = 15V
72
ILM
Clamped Inductive Load Current, VGE = 20V
96
IF @ TC = 25°C
Diode Continous Forward Current
55
IF @ TC = 100°C
Diode Continous Forward Current
35
IFM
Diode Maximum Forward Current
72
VGE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
dV/dt
Maximum Voltage Transient
15
V/ns
PD @ TC = 25°C
Maximum Power Dissipation
214
W
PD @ TC = 100°C Maximum Power Dissipation
107
-55 to +175
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
* Qualification standards can be found at http://www.irf.com/
1
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AUIRGP/F66524D0
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
Typ.
–––
–––
0.24
–––
Parameter
Thermal Resistance Junction-to-Case (each IGBT)
Thermal Resistance Junction-to-Case (each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min. Typ.
Parameter
600
—
V(BR)CES
Collector-to-Emitter Breakdown Voltage
—
0.21
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
—
1.60
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.95
—
2.0
5.5
6.5
Gate Threshold Voltage
VGE(th)
—
-28
VGE(th)/TJ Threshold Voltage temp. coefficient
—
21
gfe
Forward Transconductance
—
1.1
Collector-to-Emitter Leakage Current
ICES
—
1.50
VFM
Diode Forward Voltage Drop
—
1.40
—
—
IGES
Gate-to-Emitter Leakage Current
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Units
°C/W
Max. Units
Conditions
—
V
VGE = 0V, IC = 100µA
—
V/°C VGE=0V, IC=20mA (25°C-175°C)
1.90
IC = 24A, VGE = 15V, TJ = 25°C
V
—
IC = 24A, VGE = 15V, TJ = 150°C
—
IC = 24A, VGE = 15V, TJ = 175°C
7.5
V
VCE = VGE, IC = 250µA
— mV/°C VCE=VGE, IC=1mA(25°C-175°C)
—
S
VCE = 50V, IC = 24A, PW = 20µs
50
µA VGE = 0V, VCE = 600V
1.90
IF = 24A
V
—
IF = 24A, TJ = 175°C
±100
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Total Gate Charge (turn-on)
—
50
80
Qg
Gate-to-Emitter Charge (turn-on)
—
16
24
Qge
Qgc
Gate-to-Collector Charge (turn-on)
—
26
39
Eon
Turn-On Switching Loss
—
915 1045
Eoff
Turn-Off Switching Loss
—
280
395
Etotal
Total Switching Loss
—
1195 1440
td(on)
Turn-On delay time
—
30
50
Rise time
—
25
45
tr
td(off)
Turn-Off delay time
—
75
95
tf
Fall time
—
25
45
Eon
Turn-On Switching Loss
—
1280
—
Turn-Off Switching Loss
—
550
—
Eoff
Etotal
Total Switching Loss
—
1830
—
td(on)
Turn-On delay time
—
30
—
tr
Rise time
—
25
—
td(off)
Turn-Off delay time
—
100
—
tf
Fall time
—
95
—
Cies
Input Capacitance
—
1460
—
Coes
Output Capacitance
—
120
—
Cres
Reverse Transfer Capacitance
—
50
—
RBSOA
Max.
0.7
1.1
–––
40
Units
nC
Conditions
IC = 24A
VGE = 15V
VCC = 400V
µJ
ns
IC = 24A, VCC = 400V, VGE = 15V
RG = 10, L = 740µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
µJ
ns
pF
FULL SQUARE
6
—
—
µs
—
—
—
570
176
19
—
—
—
µJ
ns
A
IC = 24A, VCC = 400V, VGE = 15V
RG = 10, L = 740µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 96A
VCC = 480V, Vp ≤ 600V
Rg = 10, VGE = +20V to 0V
TJ = 150°C, VCC = 400V, Vp ≤600V
Rg = 50, VGE = +15V to 0V
TJ = 175°C
VCC = 400V, IF = 24A
VGE = 15V, Rg = 10, L = 740µH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 740µH, RG = 10.
Pulse width limited by max. junction temperature.
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Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ approximately 90°C.
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AUIRGP/F66524D0
70
For both:
Duty cycle : 50%
Tj = 175°C
Tsink = 100°C
Gate drive as specified
Power Dissipation = 114W
60
Load Current ( A )
50
40
Square Wave:
30
VCC
20
I
Diode as specified
10
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
70
250
60
200
40
Ptot (W)
IC (A)
50
30
150
100
20
50
10
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC (°C)
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10µsec
100
IC (A)
IC (A)
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10
DC
0.1
1
1
10
100
1000
10000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C, TJ @ 175°C; VGE =15V
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10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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AUIRGP/F66524D0
96
96
84
84
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
ICE (A)
60
48
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
72
60
ICE (A)
72
48
36
36
24
24
12
12
0
0
0
2
4
6
8
0
10
2
4
96
96
84
48
72
60
IF (A)
60
TJ = -40°C
TJ = 25°C
TJ =175°C
84
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
72
ICE (A)
10
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
Fig. 6 - - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
48
36
36
24
24
12
12
0
0
0
2
4
6
8
10
0.0
0.5
1.0
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
2.5
3.0
3.5
10
ICE = 12A
ICE = 24A
ICE = 48A
8
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
6
2.0
Fig. 9 - Typ. Diode Forward Characteristics
tp = 20µs
10
8
1.5
V F (V)
V CE (V)
VCE (V)
8
V CE (V)
V CE (V)
4
6
4
2
2
0
0
5
4
6
10
15
20
5
10
15
20
V GE (V)
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
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AUIRGP/F66524D0
10
ICE = 12A
ICE = 24A
ICE = 48A
8
VCE (V)
IC, Collector-to-Emitter Current (A)
96
6
4
2
84
72
60
48
36
TJ = 25°C
TJ = 175°C
24
12
0
0
5
10
15
4
20
5
6
V GE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
8
9
10 11 12 13 14
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
4000
1000
3000
Swiching Time (ns)
EON
Energy (µJ)
7
V GE, Gate-to-Emitter Voltage (V)
2000
tdOFF
100
tF
tdON
tR
10
1000
EOFF
0
1
0
10
20
30
40
50
0
10
20
ICE (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 740µH; VCE = 400V, RG = 10; VGE = 15V
50
1000
Swiching Time (ns)
EON
2000
Energy (µJ)
40
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 740µH; VCE = 400V, RG = 10; VGE = 15V
2500
1500
EOFF
1000
tdOFF
100
tF
tdON
500
tR
10
0
0
20
40
60
80
100
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 740µH; VCE = 400V, ICE = 24A; VGE = 15V
5
30
ICE (A)
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0
20
40
60
80
100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 740µH; VCE = 400V, ICE = 24A; VGE = 15V
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AUIRGP/F66524D0
24
20
22
RG = 10
18
RG = 22
18
IRR (A)
IRR (A)
20
RG = 47
16
14
16
14
RG = 100
12
10
12
10
20
30
40
50
0
20
40
IF (A)
20
3500
18
3000
QRR (µC)
IRR (A)
4000
16
12
1500
10
1000
600
12A
200
400
600
800
1000
1200
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
RG = 10
21
210
18
180
RG = 22
800
Tsc
15
Time (µs)
RG = 47
600
RG = 100
400
200
150
12
120
Isc
9
90
6
60
3
30
0
10
20
30
40
50
60
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
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Current (A)
ERR (µJ)
0
700
1000
6
2500
14
500
48A
24A
2000
400
100
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
22
300
80
RG (
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
200
60
0
9
10
11
12
13
14
15
16
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
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AUIRGP/F66524D0
10000
16
VGE, Gate-to-Emitter Voltage (V)
Capacitance (pF)
Cies
1000
Coes
100
Cres
VCES = 400V
14
VCES = 300V
12
10
8
6
4
2
10
0
0
100
200
300
400
500
0
10
20
30
40
50
60
VCE (V)
Q G, Total Gate Charge (nC)
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 24A; L= 485µH
1
Thermal Response ( ZthJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
J
R1
R1
J
1
R3
R3
Ri (°C/W)
R4
R4
C
2
1
3
2
4
3
C
4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
I (sec)
0.01805
0.000012
0.17293
0.000101
0.29774
0.002832
0.21353
0.018393
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( ZthJC )
10
1
D = 0.50
Ri (°C/W)
0.20
0.1
0.10
J
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
3
4
4
Ci= iRi
Ci= iRi
1E-005
0.0001
0.03622
0.000036
0.36378
0.000213
0.45197
0.003117
0.24882
0.019088
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
I (sec)
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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AUIRGP/F66524D0
L
L
VCC
DUT
0
80 V +
-
1K
DUT
VCC
Rg
Gate Charge Circuit
RBSO A Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
-5V
VCC
DUT /
DRIVER
DUT
VCC
Rg
RSH
Switching Loss
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.3 - S.C. SOA Circuit
C force
R = VCC
ICM
100K
D1
DUT
C sense
VCC
Rg
22K
G force
DUT
0.0075µF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
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AUIRGP/F66524D0
600
60
600
50
500
60
tf
400
30
300
20
200
100
10
5% VCE
10% ICE
0
Eoff Loss
-4
-2
0
2
-10
4
6
40
30
90% ICE
200
100
0
-100
20
10
10% ICE
5% VCE
0
0
Eon Loss
-100
-10
-4
-2
0
time(µs)
2
4
6
time (µs)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
250
500
VCE
40
400
200
300
150
QRR
Vce (V)
20
IF (A)
tRR
10
0
Peak
IRR
ICE
Ice (A)
30
-10
50
TEST
CURRENT
ICE (A)
90% ICE
300
40
ICE (A)
VCE (V)
400
tr
VCE (V)
500
200
100
100
50
0
0
-20
-50
-100
-30
-0.50 -0.30 -0.10
-4
0.10
0.30
0.50
0
4
8
Time (µs)
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
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Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
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AUIRGP/F66524D0
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUGP66524D0
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRGP/F66524D0
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Part Number
AUGF66524D0
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRGP/F66524D0
Qualification Information†
Automotive
(per AEC-Q101) †
Qualification Level
This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
TO-247AC
Human Body Model
ESD
Charged Device Model
12
Class H1C(+/- 2000)††
AEC-Q101-001
Class C5 (+/- 1000)††
AEC-Q101-005
Yes
RoHS Compliant
†
††
N/A
TO-247AD
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Highest passing voltage.
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AUIRGP/F66524D0
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with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications,
IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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www.irf.com
© 2014 International Rectifier
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October 10, 2014
