AUTOMOTIVE GRADE
AUIRGP35B60PD-E
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Lead-Free, RoHS Compliant
Automotive Qualified *
C
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
E
Equivalent MOSFET
Parameters
RCE(on) typ. = 84m
ID (FET equivalent) = 35A
G
n-channel
C
Applications
PFC and ZVS SMPS Circuits
DC/DC Converter Charger
G
Base Part Number
Package Type
AUIRGP35B60PD-E
TO-247AD
E
TO-247AD
AUIRGP35B60PD-E
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
C
G
Gate
C
Collector
Standard Pack
Form
Quantity
Tube
25
E
Emitter
Orderable Part Number
AUIRGP35B60PD-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C. T.4)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
60
34
120
120
40
15
60
±20
308
123
-55 to +150
Units
V
A
V
W
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case (each IGBT)
Thermal Resistance Junction-to-Case (each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
* Qualification standards can be found at www.infineon.com
RJC (IGBT)
RJC (Diode)
RCS
RJA
1
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0(0.21)
Max.
0.41
1.7
–––
40
–––
Units
°C/W
g(oz)
2017-08-24
AUIRGP35B60PD-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Parameter
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
Internal Gate Resistance
RG
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
600
—
—
—
—
—
—
3.0
—
—
—
—
—
—
—
—
0.78
1.7
1.85
2.25
2.37
3.00
4.0
-10
36
3.0
0.35
1.30
1.20
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Qg
Total Gate Charge (turn-on)
—
160
Qge
Gate-to-Emitter Charge (turn-on)
—
55
Gate-to-Collector Charge (turn-on)
—
21
Qgc
Eon
Turn-On Switching Loss
—
220
Turn-Off Switching Loss
—
215
Eoff
Total Switching Loss
—
435
Etotal
td(on)
Turn-On delay time
—
26
tr
Rise time
—
6.0
Turn-Off delay time
—
110
td(off)
Max. Units
Conditions
240
IC = 22A
83
nC VGE = 15V
VCC = 400V
32
270
265
J
IC = 22A, VCC = 390V,
535
VGE = +15V,
34
ns RG = 3.3, L = 200µH,
8.0
TJ = 25°C
122
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Energy Related)
—
—
—
—
—
—
—
—
—
—
—
—
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Irr
Peak Reverse Recovery Current
42
74
80
220
4.0
6.5
Ref. Fig.
Conditions
—
V VGE = 0V, IC = 500µA
—
V/°C VGE = 0V, IC = 1mA (25°C-125°C)
—
Ω 1MHz, Open Collector
4,5,6,8,9
2.15
IC = 22A, VGE = 15V
2.55
IC = 35A, VGE = 15V
V
2.80
IC = 22A, VGE = 15V, TJ = 125°C
3.45
IC = 35A, VGE = 15V, TJ = 125°C
5.0
V
IC = 250µA
7,8,9
— mV/°C VCE = VGE, IC = 1.0mA
—
S VCE = 50V, IC = 22A,PW = 80µs
375
µA VGE = 0V, VCE = 600V
—
mA VGE = 0V, VCE = 600V,TJ = 125°C
1.70
IF = 15A
V
10
1.60
IF = 15A, TJ = 125°C
±100 nA VGE = ±20V, VCE = 0V
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Coes eff.
Coes eff. (ER)
—
—
—
—
—
—
8.0
410
330
740
26
8.0
130
12
3715
265
47
135
179
Max. Units
10
465
405
870
34
11
150
16
—
—
—
—
—
60
120
180
600
6.0
10
Ref. Fig.
17
CT1
CT3
CT3
11,13
WF1,WF2
J
ns
pF
IC = 22A, VCC = 390V,
VGE = +15V,
RG = 3.3, L = 200µH,
TJ = 125°C
CT3
12,14
WF1,WF2
VGE = 0V
VCC = 30V
f = 1.0Mhz
16
VGE = 0V, VCE = 0V to 480V
ns
nC
A
TJ = 150°C, IC = 120A
VCC = 480V, Vp ≤ 600V
Rg = 22, VGE = +15V to 0V
TJ = 25°C
TJ = 125°C
I = 15A,
TJ = 25°C F
VR = 200V,
TJ = 125°C
di/dt = 200A/µs
TJ = 25°C
TJ = 125°C
15
3
CT2
19
21
19,20,21,22
CT5
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
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2017-08-24
AUIRGP35B60PD-E
350
70
300
60
250
Ptot (W)
50
IC (A)
40
30
200
150
100
20
50
10
0
0
0
20
40
60
80
0
100 120 140 160
20
40
60
80
100 120 140 160
T C (°C)
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs.
Case Temperature
70
1000
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
60
50
IC A)
ICE (A)
100
10
40
30
20
10
0
1
10
100
0
1000
1
2
VCE (V)
5
70
70
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
60
50
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
60
50
40
ICE (A)
ICE (A)
4
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 15V
30
40
30
20
20
10
10
0
0
0
1
2
3
VCE (V)
4
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
3
3
VCE (V)
5
0
1
2
3
4
5
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
2017-08-24
AUIRGP35B60PD-E
10
800
700
600
T J = 25°C
9
T J = 125°C
8
7
VCE (V)
ICE (A)
500
400
300
ICE = 11A
6
ICE = 22A
5
ICE = 35A
4
200
3
T J = 125°C
100
2
T J = 25°C
1
0
0
5
10
15
0
20
5
10
15
20
VGE (V)
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
100
9
F
InstantaneousForw
ardC
urrent -I (A
)
8
VCE (V)
7
ICE = 11A
6
ICE = 22A
5
ICE = 35A
4
3
2
10
TJ = 150°C
TJ = 125°C
TJ =
25°C
1
0
5
10
15
20
1
0.8
VGE (V)
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
800
1000
700
EON
Swiching Time (ns)
Energy (µJ)
600
500
400
EOFF
300
200
tdOFF
100
tdON
tF
10
tR
100
0
0
5
10
15
20
25
30
35
40
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
4
1
0
10
20
30
40
IC (A)
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
2017-08-24
AUIRGP35B60PD-E
800
1000
700
tdOFF
EON
Swiching Time (ns)
Energy (µJ)
600
500
400
EOFF
300
100
tdON
tF
10
tR
200
100
1
0
0
0
10
20
30
40
10
50
R G ( )
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
20
30
40
50
RG ()
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
30
Cies
25
Capacitance (pF)
Eoes (µJ)
20
15
10
1000
Coes
100
Cres
5
0
0
100
200
300
400
500
600
700
10
0
VCE (V)
20
40
60
80
100
VCE (V)
Fig. 15 - Typ. Output Capacitance
Stored Energy vs. VCE
Fig. 16 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
1.4
14
Normalized V CE(on) (V)
400V
12
VGE (V)
10
8
6
4
1.2
1.0
2
0.8
0
0
50
100
150
Q G , Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 22A
5
200
-50
0
50
100
150
200
T J (°C)
Fig. 18 Normalized Typ. VCE(on) vs. Junction Temperature
IC = 22A, VGE= 15V
2017-08-24
AUIRGP35B60PD-E
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I IRRM - (A)
t rr - (ns)
I F = 30A
I F = 30A
60
I F = 15A
IF = 15A
10
I F = 5.0A
40
I F = 5.0A
20
100
di f /dt - (A/µs)
1
100
1000
di f /dt - (A/µs)
1000
Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Reverse Recovery vs. dif/dt
1000
800
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
600
Q RR - (nC)
IF = 30A
400
I F = 15A
IF = 5.0A
I F = 5.0A
I F = 15A
I F = 30A
200
0
100
di f /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
6
100
100
di f /dt - (A/µs)
1000
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
2017-08-24
AUIRGP35B60PD-E
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
R1
R1
0.05
0.01
J
0.01
0.02
J
1
R2
R2
R3
R3
C
2
1
3
2
Ri (°C/W)
i (sec)
0.139
0.000257
0.077
0.001418
0.194
0.020178
C
3
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
J
0.05
0.01
0.02
R1
R1
J
1
R2
R2
R3
R3
C
1
2
3
2
Ci= iRi
Ci= iRi
0.01
3
C
Ri (°C/W)
i (sec)
0.363
0.000112
0.864
0.001184
0.473
0.032264
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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2017-08-24
AUIRGP35B60PD-E
L
80 V +
-
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R = VCC
ICM
DUT
VCC
Rg
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.5 - Reverse Recovery Parameter Test Circuit
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2017-08-24
AUIRGP35B60PD-E
400
tf
300
9 0 % IC E
200
400
35
350
30
300
25
20
5% V CE
150
15
100
5 % IC E
50
0
-5 0
-0 .2 0
40
E o ff L o s s
0 .0 0
0 .2 0
0 .4 0
0 .6 0
45
40
TEST CURRENT
9 0 % te s t c u rre n t
1 0 % te s t c u rre n t
150
100
5
50
0
0
-5
0 .8 0
25
200
10
35
30
tr
250
V C E (V )
V CE (V )
250
450
I C E (A )
350
45
20
15
I C E (A )
450
10
5% V CE
E on Loss
-5 0
9 .0 0
9 .2 0
9 .4 0
5
0
-5
9 .6 0
T im e (µs )
T im e (µ s )
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF3 - Reverse Recovery Waveform and
Definitions
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2017-08-24
AUIRGP35B60PD-E
TO-247AD Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AD Part Marking Information
Part Number
AUIRGP35B60PD-E
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
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2017-08-24
AUIRGP35B60PD-E
Qualification Information
Automotive
(per AEC-Q101)
This part number(s) passed Automotive qualification. Infineon’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
TO-247AD
N/A
Class M4(+/‐ 425V)†
AEC-Q101-002
Human Body Model
ESD
Class H2(+/‐ 4000V)†
AEC-Q101-001
Charged Device Model
Class C5 (+/‐ 1125V)†
AEC-Q101-005
Yes
RoHS Compliant
†
Highest passing voltage.
Revision History
Date
8/24/2017
Comments
Updated datasheet with corporate template
Corrected typo Qual table -Moisture Sensitivity Level-from “MSL1” to N/A-page 11
Corrected part marking on pages 10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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