AUIRGP4062D
AUIRGP4062D-E
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5µs SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
C
VCES = 600V
IC = 24A, TC = 100°C
tSC 5µs, TJ(max) = 175°C
G
E
VCE(on) typ. = 1.60V
n-channel
C
C
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
Base Part Number
Package Type
AUIRGP4062D
AUIRGP4062D-E
TO-247AC
TO-247AD
G
C
E
G
TO-247AC
AUIRGP4062D
G
Gate
Standard Pack
Form
Quantity
Tube
25
Tube
25
C
E
TO-247AD
AUIRGP4062D-E
C
Collector
E
Emitter
Orderable Part Number
AUIRGP4062D
AUIRGP4062D-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current VGE =15V
Clamped Inductive Load Current VGE =20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
48
24
72
96
48
24
96
±20
±30
250
125
-55 to +175
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
VGE
Units
V
A
V
W
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) TO-247
RJC (Diode) Thermal Resistance Junction-to-Case (each Diode) TO-247
Thermal Resistance, Case-to-Sink (flat, greased surface) TO-247
RCS
Thermal Resistance, Junction-to-Ambient (typical socket mount) TO-247
RJA
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.65
1.62
–––
–––
Units
°C/W
* Qualification standards can be found at www.infineon.com
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AUIRGP4062D/AUIRGP4062D-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Parameter
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
VGE(th)
Threshold
Voltage temp. coefficient
VGE(th)/TJ
Forward Transconductance
gfe
Collector-to-Emitter Leakage Current
ICES
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Max. Units
—
0.30
1.60
2.03
2.04
—
-18
17
2.0
775
1.80
1.28
—
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Min.
—
—
—
—
—
Typ.
50
13
21
115
600
Max.
75
20
31
201
700
Etotal
td(on)
Total Switching Loss
Turn-On delay time
—
—
715
41
901
53
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
22
104
29
420
840
1260
40
24
125
39
1490
129
45
31
115
41
—
—
—
—
—
—
—
—
—
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Irr
Peak Reverse Recovery Current
Ref.
—
V VGE = 0V, IC = 100µA
CT6
—
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
1.95
5,6,7
IC = 24A, VGE = 15V, TJ = 25°C
—
IC = 24A, VGE = 15V, TJ = 150°C
9,10,11
V
—
IC = 24A, VGE = 15V, TJ = 175°C
6.5
V
IC = 700µA
9,10,
— mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) 11,12
—
S VCE = 50V, IC = 24A,PW = 80µs
25
VGE = 0V, VCE = 600V
µA
—
VGE = 0V, VCE = 600V,TJ = 175°C
2.6
IF = 24A
8
V
IF = 24A, TJ = 175°C
±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Conditions
Units
nC
Conditions
Ref. Fig.
24
CT1
IC = 24A
VGE = 15V
VCC = 400V
J
IC = 24A, VCC = 400V,
VGE = +15V,TJ = 25°C
ns
RG = 10, L = 200H,LS = 150nH ,
CT4
Energy losses include tail & diode
reverse recovery
13,15,
CT4
WF1,WF2
J
IC = 24A, VCC = 400V,
VGE = +15V,TJ = 175°C
ns
RG = 10, L = 200H, LS = 150nH
Energy losses include tail & diode
reverse recovery
pF
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 96A
VCC = 480V, Vp = 600V
5
—
—
s
—
—
—
624
—
89
37
—
—
J
ns
Rg = 10, VGE = +20V to 0V
VCC = 400V, Vp = 600V
Rg = 10, VGE = +15V to 0V
TJ = 175°C
VCC = 400V,IF = 24A,VGE = 15V,
A
RG = 10, L = 200H,LS = 150nH
14,16
CT4
WF1
WF2
23
4
CT2
22,CT3
WF4
17,18,19,
20,21
WF3
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
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2017-08-25
AUIRGP4062D/AUIRGP4062D-E
50
300
45
250
40
35
200
Ptot (W)
IC (A)
30
25
20
150
100
15
10
50
5
0
0
20
40
60
0
80 100 120 140 160 180
0
20
40
60
T C (°C)
80 100 120 140 160 180
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs.
Case Temperature
1000
1000
100
100
IC (A)
IC (A)
10µsec
10
100µsec
1
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
0.1
1
10
100
1000
10
10000
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
90
90
80
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
60
50
50
40
30
30
20
20
10
10
0
0
1
2
3
4
5
6
7
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
VCE (V)
3
70
ICE (A)
70
0
1000
VCE (V)
8
0
1
2
3
4
5
6
7
8
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
2017-08-25
AUIRGP4062D/AUIRGP4062D-E
90
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
70
80
50
IF (A)
ICE (A)
60
100
40
30
-40°c
25°C
175°C
60
40
20
20
10
0
0
1
2
3
4
5
6
7
0
8
0.0
1.0
VCE (V)
20
18
18
16
16
14
14
12
ICE = 12A
ICE = 24A
ICE = 48A
10
8
3.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
VCE (V)
VCE (V)
20
2.0
VF (V)
12
ICE = 12A
ICE = 24A
ICE = 48A
10
8
6
6
4
4
2
2
0
0
5
10
15
5
20
10
15
20
VGE (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
120
18
100
16
T J = 25°C
T J = 175°C
80
12
ICE = 12A
ICE = 24A
ICE = 48A
10
8
ICE (A)
VCE (V)
14
60
40
6
4
20
2
0
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
20
0
5
10
15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
2017-08-25
AUIRGP4062D/AUIRGP4062D-E
1000
1800
1600
tdOFF
Energy (µJ)
1200
Swiching Time (ns)
1400
EOFF
1000
800
EON
600
100
tdON
tF
10
tR
400
200
0
1
0
10
20
30
40
50
60
10
20
30
40
50
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
1000
1600
1400
EON
1000
Swiching Time (ns)
Energy (µJ)
1200
EOFF
800
600
tdOFF
100
tdON
400
tF
200
tR
0
10
0
25
50
75
100
125
0
25
50
75
100
125
RG ()
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
45
40
RG = 10
40
35
35
30
RG = 22
IRR (A)
IRR (A)
30
25
RG = 47
20
20
15
RG = 100
15
10
5
10
0
10
20
30
40
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
5
25
50
60
0
25
50
75
100
125
RG (
Fig. 18 Typ. Diode IRR vs. RG
TJ = 175°C
2017-08-25
AUIRGP4062D/AUIRGP4062D-E
45
4000
40
3500
35
10
3000
QRR (nC)
30
IRR (A)
48A
25
20
22
2500
47
2000
1500
15
12A
1000
10
500
5
0
500
1000
0
1500
1500
280
14
240
12
200
10
160
8
120
200
6
80
0
4
800
600
RG = 22
RG = 100
400
0
10
Time (µs)
RG = 47
RG = 10
20
30
40
50
40
8
60
Current (A)
16
1000
10
12
14
16
18
VGE (V)
IF (A)
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
16
VGE, Gate-to-Emitter Voltage (V)
10000
Capacitance (pF)
1000
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Energy (µJ)
500
diF /dt (A/µs)
diF /dt (A/µs)
Cies
1000
Coes
100
Cres
0
20
40
60
V CES = 300V
14
V CES = 400V
12
10
8
6
4
2
0
10
80
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
24A
100
100
0
5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
2017-08-25
AUIRGP4062D/AUIRGP4062D-E
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
J
0.02
0.01
0.01
R1
R1
J
1
R2
R2
C
2
1
C
2
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Ri (°C/W)
i (sec)
0.2782
0.000311
0.3715
0.006347
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
1
2
2
3
3
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
C
Ri (°C/W)
i (sec)
0.693
0.001222
0.621
0.005254
0.307
0.038140
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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AUIRGP4062D/AUIRGP4062D-E
L
80 V +
-
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.6 - BVCES Filter Circuit
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2017-08-25
AUIRGP4062D/AUIRGP4062D-E
600
30
600
25
500
60
tf
500
50
V CE
CURR tr
90% ICE
20
VCE (V)
ICE
V CE
300
200
15
10
5% V CE
400
VCE (V)
400
40
ICE
CURREN
300
90% test
200
20
10% ICE
100
5
100
0
0
5% V CE
5% ICE
0
EOFF Loss
-100
-0.40
10
0
EON
-5
0.10
30
0.60
-100
11.70
11.90
12.10
-10
12.30
Time (µs)
Time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
30
600
300
ICE
500
10
tRR
400
Peak
IRR
VCE (V)
IRR (A)
0
-10
10%
Peak
IRR
200
VCE
300
150
200
100
-30
100
50
-40
0
-20
-50
-0.15
-0.05
0.05
0.15
0.25
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
9
250
-100
-5.00
ICE (A)
QRR
20
0
0.00
5.00
-50
10.00
time (µS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
2017-08-25
AUIRGP4062D/AUIRGP4062D-E
TO-247AC Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
AU4062D
Part Number
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
10
2017-08-25
AUIRGP4062D/AUIRGP4062D-E
TO-247AD Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AD Part Marking Information
Part Number
AU4062D-E
YWWA
IR Logo
XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
XX
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
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2017-08-25
AUIRGP4062D/AUIRGP4062D-E
Qualification Information
Automotive
(per AEC-Q101)
This part number(s) passed Automotive qualification. Infineon’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
TO-247AC
N/A
TO-247AD
Class M4(+/‐ 400V)†
AEC-Q101-002
Class H2(+/‐ 2000V)†
AEC-Q101-001
Class C5 (+/‐ 1000V)†
AEC-Q101-005
Machine Model
Human Body Model
ESD
Charged Device Model
Yes
RoHS Compliant
†
Highest passing voltage.
Revision History
Date
8/24/2017
Comments
Updated datasheet with corporate template
Corrected package outline –TO-247AD on page 11
Corrected part marking on pages 10,11
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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