AUIRGP4062D1

AUIRGP4062D1 AUIRGP4062D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C IC(Nominal) = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant Automotive Qualified * tSC ≥ 5μs, TJ(max) = 175°C G E VCE(on) typ. = 1.57V n-channel Benefits C C • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI E C G Applications • • • • VCES = 600V G C TO-247AC AUIRGP4062D1 Air Conditioning Compressor EV Inverter Battery charger DC-DC converter G Gate Ordering Information Base part number Package Type AUIRGP4062D1 AUIRGP4062D1-E Standard Pack Form Tube Tube TO-247AC TO-247AD E TO-247AD AUIRGP4062D1-E C Collector E Emitter Complete Part Number Quantity 25 25 AUIRGP4062D1 AUIRGP4062D1-E Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE Max. 600 55 36 Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current 24 72 96 55 36 96 c d Continuous Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Units V Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range A ±20 ±30 V 217 109 W -55 to +175 °C 300 10 lbf·in (1.1N·m) Soldering Temperature, for 10 sec. (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC (IGBT) RθJC (Diode) Parameter Thermal Resistance Junction-to-Case (IGBT) Thermal Resistance Junction-to-Case (Diode) Min. ––– ––– Typ. ––– ––– Max. 0.69 1.2 RθCS RθJA Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient ––– ––– 0.24 40 ––– ––– e e Units °C/W *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. 600 — — Temperature Coeff. of Breakdown Voltage — 0.3 — — 1.57 1.77 V CE(on) Collector-to-Emitter Saturation Voltage — 1.87 — — 1.94 — V GE(th) Gate Threshold Voltage 4.0 — 6.5 ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -17 — gfe Forward Transconductance — 12 — S VCE = 50V, IC = 24A, PW = 20μs ICES Collector-to-Emitter Leakage Current — 1.0 25 μA VGE = 0V, V CE = 600V — 3.5 — mA V FM Diode Forward Voltage Drop — 1.57 — — 1.40 — — 1.47 — — — ±100 V (BR)CES Collector-to-Emitter Breakdown Voltage ΔV(BR)CES/ΔTJ IGES Gate-to-Emitter Leakage Current Max. Units V Conditions VGE = 0V, I C = 100μA f V/°C VGE = 0V, I C = 10mA (25°C-175°C) IC = 24A, V GE = 15V, TJ = 25°C V IC = 24A, V GE = 15V, TJ = 150°C V VCE = V GE, IC = 700μA IC = 24A, V GE = 15V, TJ = 175°C mV/°C VCE = V GE, IC = 1.0mA (25°C - 175°C) VGE = 0V, V CE = 600V, TJ = 175°C IF = 24A V IF = 19A nA VGE = ±20V IF = 24A, TJ = 175°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. — 51 Max. Units Qg Total Gate Charge (turn-on) 77 Qge Gate-to-Emitter Charge (turn-on) — 14 21 Qgc Gate-to-Collector Charge (turn-on) — 21 32 E on Turn-On Switching Loss — 532 754 E off Turn-Off Switching Loss — 311 526 E total Total Switching Loss — 843 1280 td(on) Turn-On delay time — 19 36 tr Rise time — 24 41 td(off) Turn-Off delay time — 90 109 tf Fall time — 23 40 E on Turn-On Switching Loss — 726 — E off Turn-Off Switching Loss — 549 — E total Total Switching Loss — 1275 — td(on) Turn-On delay time — 12 — tr Rise time — 23 — td(off) Turn-Off delay time — 92 — tf Fall time — 84 — Cies Input Capacitance — 1487 — Coes Output Capacitance — 118 — Cres Reverse Transfer Capacitance — 44 — RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area Erec Reverse Recovery Energy of the Diode trr Irr Conditions IC = 24A nC VGE = 15V VCC = 400V IC = 24A, V CC = 400V, VGE = 15V μJ RG = 10Ω, L = 210μH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 24A, V CC = 400V, VGE = 15V ns RG = 10Ω, L = 210μH, TJ = 25°C μJ RG=10Ω, L= 210μH,TJ = 175°C IC = 24A, V CC = 400V, VGE=15V f Energy losses include tail & diode reverse recovery IC = 24A, V CC = 400V, VGE = 15V ns RG = 10Ω, L = 200μH, LS = 150nH TJ = 175°C VGE = 0V pF VCC = 30V f = 1.0Mhz TJ = 175°C, I C = 96A VCC = 480V, Vp ” 600V Rg = 10Ω, V GE = +20V to 0V VCC = 400V, Vp” 600V 5 — — μs — 773 — μJ TJ = 175°C Diode Reverse Recovery Time — 102 — ns VCC = 400V, I F = 24A Peak Reverse Recovery Current — 32 — A VGE = 15V, Rg = 10Ω, L =210μH Rg = 10Ω, V GE = +15V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 210μH, RG = 50Ω. ‚ Pulse width limited by max. junction temperature. ƒ Rθ is measured at TJ of approximately 90°C. „ Maximum limits are based on statistical sample size characterization. 2 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E 250 60 50 200 150 Ptot (W) IC (A) 40 30 100 20 50 10 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 1000 10μsec 100μsec 10 100 IC (A) IC (A) 1msec DC 1 10 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE = 20V 100 100 VGE = 18V VGE = 15V VGE = 12V VGE = 11V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 60 VGE = 18V VGE = 15V VGE = 12V VGE = 11V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 90 80 70 ICE (A) 80 ICE (A) 1000 40 60 50 40 30 20 20 10 0 0 0 1 2 3 4 5 6 7 8 9 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20μs 3 www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20μs May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E 100 100 VGE = 18V VGE = 15V VGE = 12V VGE = 11V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V 60 80 T J = -40°C T J = 25°C T J =175°C 60 IF (A) ICE (A) 80 40 40 20 20 0 0 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 VCE (V) 8 8 6 6 ICE = 12A ICE = 24A ICE = 48A 2 3.0 ICE = 12A ICE = 24A 4 ICE = 48A 0 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 8 IC, Collector-to-Emitter Current (A) 100 ICE = 12A ICE = 24A ICE = 48A 6 VCE (V) 2.5 2 0 4 2 T J = 25°C T J = 175°C 80 60 40 20 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 20μs VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20μs 4 1.5 VF (V) www.irf.com © 2013 International Rectifier 2 4 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 20μs May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E 2500 1000 2000 tdOFF Swiching Time (ns) EON Energy (μJ) 1500 1000 100 tF tR tdON 10 EOFF 500 0 0 10 20 30 40 1 50 0 10 20 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 210μH; VCE = 400V, RG = 10Ω; VGE = 15V 40 50 Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 210μH; VCE = 400V, RG = 10Ω; VGE = 15V 2000 1000 1600 tdOFF EON Swiching Time (ns) Energy (μJ) 30 IC (A) 1200 EOFF 800 100 tF tR 10 tdON 400 0 0 20 40 60 80 100 1 120 0 20 40 60 80 100 RG (Ω) RG (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 24A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 24A; VGE = 15V 35 35 30 RG = 10Ω 30 RG = 22Ω 25 IRR (A) IRR (A) 25 20 RG = 47Ω 20 15 RG = 100Ω 15 10 5 10 10 15 20 25 30 35 40 45 50 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 www.irf.com © 2013 International Rectifier 0 20 40 60 80 100 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E 6000 35 48A 5000 QRR (nC) IRR (A) 30 25 10Ω 4000 3000 22Ω 47Ω 100Ω 24A 20 2000 12A 1000 15 0 200 400 600 800 1000 200 1200 400 600 diF /dt (A/μs) 2000 1200 Time (μs) RG = 22Ω RG = 47Ω 16 250 12 200 Isc Tsc 8 150 4 100 RG = 100Ω 500 50 0 0 10 20 30 40 8 50 10 12 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 16 VGE, Gate-to-Emitter Voltage (V) 10000 Cies Capacitance (pF) 14 VGE (V) IF (A) 1000 Coes 100 Cres 10 14 V CES = 400V 12 V CES = 300V 10 8 6 4 2 0 0 100 200 300 400 500 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) Energy (μJ) RG = 10Ω 1000 1000 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C 1500 800 diF /dt (A/μs) www.irf.com © 2013 International Rectifier 0 10 20 30 40 50 60 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 24A; L = 585μH May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 τ3 τ2 Ci= τi/Ri Ci i/Ri 0.0001 1E-006 1E-005 0.0001 τC τ Ri (°C/W) τi (sec) 0.2164 0.00026 0.2800 0.00252 0.1937 0.01593 τ3 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 1 0.2164 0.2800 0.1937 0.00026 0.00252 0.01593 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.02 0.05 0.01 0.1 0.01 τJ R1 R1 τJ τ1 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 0.001 τ4 τ4 0.0408 τi (sec) 0.00005 0.4339 0.00026 0.4778 0.00335 0.2480 0.02157 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E L L DUT 0 80 V + VCC - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM DUT VCC Rg Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E 600 60 60 600 tr 500 400 40 400 300 30 300 90% ICE 200 100 20 10 5% VCE Eoff Loss -0.05 0.2 -10 0.45 0.7 30 90% / 20 200 100 0 -100 10 10% / 5% VCE 0 0 -100 -0.3 Eon Loss -0.05 time(μs) 0.45 -10 0.7 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 500 35 500 QRR 28 VCE 400 21 400 tRR 14 300 0 -7 Peak IRR 300 ICE Ice (A) 7 Vce (V) IF (A) 0.2 time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 -14 40 TEST CURRENT 10% ICE 0 -0.3 50 ICE (A) 50 VCE (V) 500 ICE (A) VCE (V) tf 200 200 100 100 -21 0 -28 -35 -0.25 0.00 0.25 0.50 0 -100 -100 -2 time (μS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 www.irf.com © 2013 International Rectifier 0 2 4 6 8 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information LC LC Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information LC LC Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E † Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level 3L-TO-247AC N/A 3L-TO-247AD Machine Model Human Body Model ESD †† Charged Device Model Class M4 (+/- 700V ) (per AEC-Q101-002) Class H1C (+/- 2000V ) (per AEC-Q101-001) Class C5(+/- 2000V ) (per AEC-Q101-005) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Highest passing voltage. 12 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4062D1/AUIRGP4062D1-E IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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